Abstract:
In an ECU attached to a motor assembly, inverter FETs, which generate outputs for driving a motor, are electrically connected to a substrate. A plurality of screw holes is formed in a heat sink thereby to fix the substrate. A resin member is provided between the heat sink and the substrate and has a plurality of motor terminals and a resin mold, which integrally fix the motor terminals by molding the motor terminals. The motor terminal has an embedded part, a L-shaped substrate-side exposed part and a motor-side exposed side including a curbed part. The resin member and the substrate are tightened together and fixed to the heat sink.
Abstract:
The present invention provides a high-strength steel sheet excellent in shape fixability. The high-strength steel sheet contains C, Si, Mn, P, S, Al, N, and O with predetermined contents, in which a retained austenite phase of 5 to 20% in volume fraction is contained, an amount of solid-solution C contained in the retained austenite phase is 0.80 to 1.00% in mass %, WSiγ is 1.10 times or more WSi*, WMnγ is 1.10 times or more WMn*, and when a frequency distribution is measured with respect to a sum of a ratio between WSi and WSi* and a ratio between WAl and WAl*, a mode value of the frequency distribution is 1.95 to 2.05, and a kurtosis is 2.00 or more.
Abstract:
In a motor drive apparatus for driving a three-phase AC motor, a first mounting part of a heat sink is formed along an end. A second mounting part is formed in a direction perpendicular to the first mounting part and includes a first column part and a second column part. Three motor relay FETs are mounted on the first mounting part. Six inverter FETs and two power relay FETs are mounted on the second mounting part. Leads of the FETs are electrically connected to an electric circuit substrate. Heat generated by the FETs is radiated to the heat sink through an insulating and heat radiating sheet. By thus arranging the FETs, the motor drive apparatus is reduced in size.
Abstract:
[Summary] The present invention provides a high-strength steel sheet excellent in impact resistance. The high-strength steel sheet contains predetermined contents of C, Si, Mn, P, S, Al, Ti, N, and O, with the balance being iron and inevitable impurities, and has a steel sheet structure in which, in a ⅛ thickness to ⅜ thickness region across ¼ of a sheet thickness, 1 to 8% retained austenite is contained in volume fraction, an average aspect ratio of the retained austenite is 2.0 or less, an amount of solid-solution Mn in the retained austenite is 1.1 times an average amount of Mn or more, and TiN grains having a 0.5 μm average grain diameter or less are contained, and a density of AlN grains with a 1 μm grain diameter or more is 1.0 pieces/mm2 or less, wherein a maximum tensile strength is 900 MPa or more.
Abstract translation:发明内容本发明提供耐冲击性优异的高强度钢板。 高强度钢板含有预定含量的C,Si,Mn,P,S,Al,Ti,N和O,余量为铁和不可避免的杂质,并且具有钢板结构,其中在 厚度为⅜厚度区域,1/4的残留奥氏体含量为1〜8%,残留奥氏体的平均纵横比为2.0以下,残留奥氏体中的固溶Mn量为1.1 的平均粒径Mn以上,并且含有0.5μm平均粒径以下的TiN粒子,1μm以上的AlN粒子的密度为1.0个/ mm 2以下,其中,最大拉伸强度 强度为900MPa以上。
Abstract:
High strength steel sheet and high strength galvanized steel sheet which are excellent in shapeability which secure a tensile maximum strength 900 MPa or more high strength while obtaining excellent ductility and stretch flangeability, which sheets have predetermined compositions of ingredients, have steel sheet structures which contain volume fraction 1 to 20% of residual austenite phases, and which have martensite transformation points of the residual austenite phases of −60° C. or less.
Abstract:
This high-strength steel sheet includes by mass percentage: 0.05 to 0.4% of C; 0.1 to 2.5% of Si; 1.0 to 3.5% of Mn; 0.001 to 0.03% of P; 0.0001 to 0.01% of S; 0.001 to 2.5% of Al; 0.0001 to 0.01% of N; 0.0001 to 0.008% of O; and a remainder composed of iron and inevitable impurities, wherein a steel sheet structure contains by volume fraction 10 to 50% of a ferrite phase, 10 to 50% of a tempered martensite phase, and a remaining hard phase, wherein a 98% hardness is 1.5 or more times as high as a 2% hardness in a range from ⅛ to ⅜ of a thickness of the steel sheet, wherein a kurtosis K* of the hardness distribution between the 2% hardness and the 98% hardness is −1.2 to −0.4, and wherein an average crystal grain size in the steel sheet structure is 10 μm or less.
Abstract:
A motor has a motor body and a control unit, which is joined to the motor body. A resolver is connected to the control unit through a flat cable. The flat cable is arranged such that the width direction of the flat cable corresponds with a circumferential direction of the motor body. The flat cable extends outwardly in a radial direction of the motor case.
Abstract:
A testing apparatus for a magnetic head tests electromagnetic conversion characteristics of the magnetic head by causing a magnetic head 10 to fly above a surface of the recording medium 16 and testing recording and playback characteristics of the magnetic head for the recording medium. The testing apparatus includes a setting portion 14 that moves the magnetic head 10 to and supports the magnetic head at a position where the magnetic head 10 is loaded on the recording medium 16 and a position where the magnetic head is withdrawn from the load position; an electromagnetic wave emitting device 30 that emits electromagnetic waves toward the magnetic head; and a detector 20 that is electrically connected to the magnetic head and detects an output signal of the magnetic head. By applying electromagnetic waves from the electromagnetic wave emitting device 30 onto the magnetic head, it is possible to detect the electromagnetic wave durability of the magnetic head 10.
Abstract:
An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.
Abstract:
A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.