公开(公告)号：US07489040B2

公开(公告)日：2009-02-10

申请号：US11635495

申请日：2006-12-08

申请人： Koyu Asai ,  Hiroshi Tobimatsu ,  Hiroyuki Kawata ,  Mahito Sawada

发明人： Koyu Asai ,  Hiroshi Tobimatsu ,  Hiroyuki Kawata ,  Mahito Sawada

IPC分类号： H01L23/48

CPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

摘要翻译： 互连设置有连接到互连体的虚拟互连，并且虚设互连设置有应力集中部，其中产生比互连体高的拉伸应力。 在应力集中部分附近，设置通过高密度等离子体CVD形成的绝缘膜，并且通过绝缘膜在应力集中部分产生拉伸应力。 利用这种结构，可以防止在互连体中的任何位置发生空隙。

公开(公告)号：US20070096322A1

公开(公告)日：2007-05-03

申请号：US11635495

申请日：2006-12-08

申请人： Koyu Asai ,  Hiroshi Tobimatsu ,  Hiroyuki Kawata ,  Mahito Sawada

发明人： Koyu Asai ,  Hiroshi Tobimatsu ,  Hiroyuki Kawata ,  Mahito Sawada

IPC分类号： H01L23/52

CPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

摘要翻译： 互连设置有连接到互连体的虚拟互连，并且虚设互连设置有应力集中部，其中产生比互连体高的拉伸应力。 在应力集中部分附近，设置通过高密度等离子体CVD形成的绝缘膜，并且通过绝缘膜在应力集中部分产生拉伸应力。 利用这种结构，可以防止在互连体中的任何位置发生空隙。

公开(公告)号：US07154184B2

公开(公告)日：2006-12-26

申请号：US10725384

申请日：2003-12-03

申请人： Koyu Asai ,  Hiroshi Tobimatsu ,  Hiroyuki Kawata ,  Mahito Sawada

发明人： Koyu Asai ,  Hiroshi Tobimatsu ,  Hiroyuki Kawata ,  Mahito Sawada

IPC分类号： H01L23/48

CPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

公开(公告)号：US06544904B1

公开(公告)日：2003-04-08

申请号：US10157882

申请日：2002-05-31

申请人： Yuuki Kamiura ,  Hiroshi Tobimatsu ,  Kouji Oda ,  Mahito Sawada ,  Koji Shibata ,  Hiroyuki Kawata

发明人： Yuuki Kamiura ,  Hiroshi Tobimatsu ,  Kouji Oda ,  Mahito Sawada ,  Koji Shibata ,  Hiroyuki Kawata

IPC分类号： H01L2131

CPC分类号： H01L21/76802 ,  H01L21/31144 ,  H01L21/76832 ,  H01L24/05 ,  H01L2924/351 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film 4 using, as a mask, a polyimide film 5 having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film 5 prior to performing anisotropic etching on a silicon oxide film 3. During the heat treatment for imidizing the polyimide film 5, since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film 5 does not come unstuck from the silicon nitride film 4. Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.

摘要翻译： 提供一种制造半导体器件的方法，其防止聚酰亚胺膜从薄膜脱落以进行各向同性蚀刻，并且进一步防止在用于酰亚胺化的热处理期间粘附到膜的各个侧面的沉积物脱落 聚酰亚胺薄膜。 在氮化硅膜4上进行各向同性蚀刻，使用形成有预定图案的聚酰亚胺膜5作为掩模。 接下来，在对氧化硅膜3进行各向异性蚀刻之前，进行热处理以对聚酰亚胺膜5进行酰亚胺化。在酰亚胺化聚酰亚胺膜5的热处理中，由于通过各向异性蚀刻产生的沉积物为 还没有粘附到膜的各个侧面，聚酰亚胺膜5不会从氮化硅膜4脱落。此外，附着在热处理后的膜的相应侧面的沉积物将不会脱落 。

公开(公告)号：US06645859B1

公开(公告)日：2003-11-11

申请号：US10170579

申请日：2002-06-14

申请人： Mahito Sawada ,  Hiroshi Tobimatsu ,  Kouji Oda ,  Yuuki Kamiura ,  Kouji Shibata ,  Hiroyuki Kawata

发明人： Mahito Sawada ,  Hiroshi Tobimatsu ,  Kouji Oda ,  Yuuki Kamiura ,  Kouji Shibata ,  Hiroyuki Kawata

IPC分类号： H01L2144

CPC分类号： H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76837

摘要： A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.

摘要翻译： 提供了通过HDP-CVD（高密度等离子体 - 化学气相沉积）在密集布置的互连之间的间隙或谷中成功地填充绝缘膜的半导体器件的制造方法。 该方法包括以下步骤：在半导体衬底上形成半导体元件，在半导体元件上形成与顶部保护层并排的多个互连以电连接半导体元件，通过除HDP-CVD之外的CVD形成保护绝缘膜以形成保护绝缘膜 互连的顶盖和侧表面以及互连之间的间隙的底表面，并且通过HDP-CVD形成绝缘膜以覆盖保护绝缘膜并填充被保护绝缘膜覆盖的互连之间的间隙。

公开(公告)号：US09139885B2

公开(公告)日：2015-09-22

申请号：US13822746

申请日：2011-09-16

申请人： Hiroyuki Kawata ,  Naoki Maruyama ,  Akinobu Murasato ,  Naoki Yoshinaga ,  Chisato Wakabayashi ,  Noriyuki Suzuki

发明人： Hiroyuki Kawata ,  Naoki Maruyama ,  Akinobu Murasato ,  Naoki Yoshinaga ,  Chisato Wakabayashi ,  Noriyuki Suzuki

IPC分类号： C21D8/02 ,  C22C38/40 ,  C25D5/10 ,  B32B15/00 ,  C21D9/46 ,  C22C38/00 ,  C22C38/02 ,  C22C38/06 ,  C22C38/38 ,  C23C2/06 ,  C23C2/40 ,  C22C38/04 ,  C22C38/08 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  C22C38/34 ,  C22C38/58 ,  C23C2/02 ,  C23C2/28 ,  C25D3/22 ,  C25D5/36 ,  C25D5/50 ,  C25D3/56

CPC分类号： C21D8/0205 ,  C21D8/0226 ,  C21D8/0236 ,  C21D8/0273 ,  C21D9/46 ,  C21D2211/005 ,  C21D2211/008 ,  C22C38/00 ,  C22C38/001 ,  C22C38/002 ,  C22C38/005 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/08 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  C22C38/34 ,  C22C38/38 ,  C22C38/40 ,  C22C38/58 ,  C23C2/02 ,  C23C2/06 ,  C23C2/28 ,  C23C2/40 ,  C25D3/22 ,  C25D3/565 ,  C25D5/36 ,  C25D5/50

摘要： This high-strength steel sheet includes by mass percentage: 0.05 to 0.4% of C; 0.1 to 2.5% of Si; 1.0 to 3.5% of Mn; 0.001 to 0.03% of P; 0.0001 to 0.01% of S; 0.001 to 2.5% of Al; 0.0001 to 0.01% of N; 0.0001 to 0.008% of O; and a remainder composed of iron and inevitable impurities, wherein a steel sheet structure contains by volume fraction 10 to 50% of a ferrite phase, 10 to 50% of a tempered martensite phase, and a remaining hard phase, wherein a 98% hardness is 1.5 or more times as high as a 2% hardness in a range from ⅛ to ⅜ of a thickness of the steel sheet, wherein a kurtosis K* of the hardness distribution between the 2% hardness and the 98% hardness is −1.2 to −0.4, and wherein an average crystal grain size in the steel sheet structure is 10 μm or less.

摘要翻译： 该高强度钢板以质量百分比计：C：0.05〜0.4％ 0.1〜2.5％的Si; 1.0〜3.5％的Mn; 0.001〜0.03％P; 0.0001〜0.01％的S; 0.001〜2.5％的Al; 0.0001〜0.01％N; 0.0001〜0.008％的O; 余量由铁和不可避免的杂质组成，其中钢板结构体积体积分数为铁素体相10-50％，回火马氏体相为10-50％，剩余硬质相为98％ 在钢板厚度的⅛至⅛范围内的2％硬度的1.5倍以上，2％硬度与98％硬度之间的硬度分布的峰度K *为-1.2〜 0.4，其中，钢板结构体的平均结晶粒径为10μm以下。

公开(公告)号：US08951366B2

公开(公告)日：2015-02-10

申请号：US13574096

申请日：2011-01-26

申请人： Kohichi Sano ,  Chisato Wakabayashi ,  Hiroyuki Kawata ,  Riki Okamoto ,  Naoki Yoshinaga ,  Kaoru Kawasaki ,  Natsuko Sugiura ,  Nobuhiro Fujita

发明人： Kohichi Sano ,  Chisato Wakabayashi ,  Hiroyuki Kawata ,  Riki Okamoto ,  Naoki Yoshinaga ,  Kaoru Kawasaki ,  Natsuko Sugiura ,  Nobuhiro Fujita

IPC分类号： C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/18 ,  C21D8/02 ,  C21D8/04 ,  C23C2/04 ,  C23C2/26 ,  C23C2/28 ,  C21D9/48

CPC分类号： C22C38/02 ,  C21D8/0436 ,  C21D8/0473 ,  C21D9/48 ,  C21D2211/001 ,  C21D2211/002 ,  C21D2211/008 ,  C22C38/04 ,  C22C38/06 ,  C23C2/04 ,  C23C2/26 ,  C23C2/28

摘要： A high-strength cold-rolled steel sheet includes, by mass %, C: 0.10% to 0.40%, Mn: 0.5% to 4.0%, Si: 0.005% to 2.5%, Al: 0.005% to 2.5%, Cr: 0% to 1.0%, and a balance of iron and inevitable impurities, in which an amount of P is limited to 0.05% or less, an amount of S is limited to 0.02% or less, an amount of N is limited to 0.006% or less, the microstructure includes 2% to 30% of retained austenite by area percentage, martensite is limited to 20% or less by area percentage in the microstructure, an average particle size of cementite is 0.01 μm to 1 μm, and 30% to 100% of the cementite has an aspect ratio of 1 to 3.

摘要翻译： 高强度冷轧钢板以质量％计含有C：0.10％至0.40％，Mn：0.5％至4.0％，Si：0.005％至2.5％，Al：0.005％至2.5％，Cr：0 ％至1.0％，其中P含量限制在0.05％以下的铁和不可避免的杂质的余量，S的量限制在0.02％以下，N的量限定为0.006％，或者 微观结构中的残余奥氏体的面积率为2％〜30％，微观结构中的面积百分比将马氏体限制在20％以下，渗碳体的平均粒径为0.01μm〜1μm，30％〜100％ 渗碳体的％的纵横比为1〜3。

公开(公告)号：US08841805B2

公开(公告)日：2014-09-23

申请号：US13408542

申请日：2012-02-29

申请人： Yuuji Yamashita ,  Noriyuki Suzuki ,  Yasuyoshi Toda ,  Hiroyuki Kawata

发明人： Yuuji Yamashita ,  Noriyuki Suzuki ,  Yasuyoshi Toda ,  Hiroyuki Kawata

IPC分类号： H02K11/00

CPC分类号： H02K29/06 ,  B62D5/0406 ,  H02K11/33

摘要： A motor has a motor body and a control unit, which is joined to the motor body. A resolver is connected to the control unit through a flat cable. The flat cable is arranged such that the width direction of the flat cable corresponds with a circumferential direction of the motor body. The flat cable extends outwardly in a radial direction of the motor case.

摘要翻译： 马达具有马达主体和控制单元，其连接到马达主体。 旋转变压器通过扁平电缆连接到控制单元。 扁平电缆布置成使得扁平电缆的宽度方向对应于电动机主体的圆周方向。 扁平电缆沿电动机壳体的径向方向向外延伸。

公开(公告)号：US20140170440A1

公开(公告)日：2014-06-19

申请号：US14235681

申请日：2012-07-27

申请人： Hiroyuki Kawata ,  Naoki Maruyama ,  Akinobu Murasato ,  Akinobu Minami ,  Masafumi Azuma ,  Takuya Kuwayama ,  Shigeru Yonemura

发明人： Hiroyuki Kawata ,  Naoki Maruyama ,  Akinobu Murasato ,  Akinobu Minami ,  Masafumi Azuma ,  Takuya Kuwayama ,  Shigeru Yonemura

IPC分类号： B32B15/01 ,  C22C38/58 ,  C22C38/54 ,  C22C38/50 ,  C22C38/48 ,  C22C38/44 ,  C22C38/42 ,  C22C38/16 ,  C22C38/14 ,  C22C38/12 ,  C22C38/08 ,  C22C38/06 ,  C22C38/04 ,  C22C38/02 ,  C22C38/34 ,  C22C38/00 ,  C21D8/02

CPC分类号： B32B15/013 ,  C21D1/19 ,  C21D8/0205 ,  C21D8/0247 ,  C21D8/0263 ,  C21D9/46 ,  C21D2211/002 ,  C21D2211/004 ,  C21D2211/005 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/002 ,  C22C38/005 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/08 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  C22C38/34 ,  C22C38/42 ,  C22C38/44 ,  C22C38/48 ,  C22C38/50 ,  C22C38/54 ,  C22C38/58 ,  C23C2/02 ,  C23C2/06 ,  C23C2/28 ,  C25D5/36 ,  Y10T428/12799

摘要： High strength steel sheet which secures tensile maximum strength 900 MPa or more high strength while having excellent shapeability, which high strength steel sheet which is excellent in shapeability characterized by having a predetermined composition of ingredients, by the steel sheet structure including a ferrite phase and martensite phase, by the ratio of Cu particles incoherent with the bcc iron being 15% or more with respect to the Cu particles as a whole, by a density of Cu particles in the ferrite phase being 1.0×1018/m3 or more, and by an average particle size of Cu particles in the ferrite phase being 2.0 nm or more.

摘要翻译： 通过具有铁素体相和马氏体的钢板结构，能够确保拉伸最大强度900MPa以上，同时具有优异的成形性的高强度钢板，其特征在于具有规定的成分组成的成形性优异的高强度钢板 相中，相对于Cu颗粒整体来说，与bcc铁不相干的Cu粒子的比例为15％以上，铁素体相中的Cu粒子的密度为1.0×1018 / m3以上， 铁素体相中的Cu粒子的平均粒径为2.0nm以上。

公开(公告)号：US20050223727A1

公开(公告)日：2005-10-13

申请号：US11147156

申请日：2005-06-08

申请人： Kenji Funahashi ,  Ken Hamada ,  Hiroyuki Kawata ,  Yasuyuki Ohkouchi

发明人： Kenji Funahashi ,  Ken Hamada ,  Hiroyuki Kawata ,  Yasuyuki Ohkouchi

IPC分类号： F01C21/10 ,  F04B35/04 ,  F04B39/12 ,  F04C29/00 ,  H02K5/22 ,  H02K11/04 ,  F25B1/00 ,  F25B49/00 ,  F25D23/12 ,  H02P8/00

CPC分类号： F04B39/121 ,  F01C21/10 ,  F04B35/04 ,  F04B2203/0204 ,  F04C29/0085 ,  F04C2240/808 ,  F25B2400/077 ,  H02K5/225 ,  H02K11/33

摘要： A bus-bar integrated plate and outer frame section, arranged into a double-deck structure and having numerous bus bars molded with a resin molding plate portion, is provided as a wiring for connecting power switching elements and a smoothing capacitor, fixed on an outer surface of a cylindrical wall of a motor housing, to a printed circuit board serving as a control circuit.

摘要翻译： 提供了布置成双层结构并具有由树脂成型板部分模制的多个汇流条的汇流条集成板和外框架部分，用于连接功率开关元件和平滑电容器的布线，固定在外部 电动机壳体的圆柱形壁的表面连接到用作控制电路的印刷电路板。