SEMICONDUCTOR SYSTEM AND METHOD OF FORMING SEMICONDUCTOR SYSTEM

    公开(公告)号:US20220068740A1

    公开(公告)日:2022-03-03

    申请号:US17088621

    申请日:2020-11-04

    Abstract: According to various examples, a device is described. The device may include a printed circuit board. The device may include a semiconductor package including an interposer with a molded portion, and one or more of semiconductor devices. The one or more semiconductor devices may have at least a first device coupled to the molded portion. The device may include a first connector coupled to the molded portion, and a second connector coupled to the printed circuit board, the first connector and the second connector configured to be connected with a cable for signal connection between the first device and the printed circuit board.

    Hybrid Boards with Embedded Planes
    42.
    发明申请

    公开(公告)号:US20210410273A1

    公开(公告)日:2021-12-30

    申请号:US17367674

    申请日:2021-07-06

    Abstract: The present disclosure is directed to a hybrid dielectric interconnect stack for a printed circuit board having a first dielectric layer with a first dielectric constant and a first dielectric loss tangent positioned over an intermediate layer, which includes a first dielectric sublayer with a first sublayer dielectric constant and a first sublayer dielectric loss tangent, an embedded conductive layer, and a second dielectric sublayer with a second sublayer dielectric constant and a second sublayer dielectric loss tangent, in which the embedded conductive layer is positioned between the first and second dielectric sublayers, and a second dielectric layer with a second dielectric constant and a second dielectric loss tangent, in which the intermediate layer is positioned between the first and second dielectric layers.

    STACKED SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME

    公开(公告)号:US20210384135A1

    公开(公告)日:2021-12-09

    申请号:US16987440

    申请日:2020-08-07

    Abstract: According to various examples, a stacked semiconductor package is described. The stacked semiconductor package may include a package substrate. The stacked semiconductor package may also include a base die disposed on and electrically coupled to the package substrate. The stacked semiconductor package may further include a mold portion disposed on the package substrate at a periphery of the base die, the mold portion may include a through-mold interconnect electrically coupled to the package substrate. The stacked semiconductor package may further include a semiconductor device having a first section disposed on the base die and a second section disposed on the mold portion, wherein the second section of the semiconductor device may be electrically coupled to the package substrate through the through-mold interconnect.

    SEMICONDUCTOR PACKAGE WITH HYBRID MOLD LAYERS

    公开(公告)号:US20210335698A1

    公开(公告)日:2021-10-28

    申请号:US17367684

    申请日:2021-07-06

    Abstract: According to various examples, a device is described. The device may include a first package substrate. The device may also include a first mold layer with a first thickness. The device may also include a second mold layer with a second thickness proximal to the first mold layer. The second thickness may be larger than the first thickness. The first mold layer may include a plurality of first interconnects coupled to the first package substrate. The second mold layer may include a plurality of second interconnects configured to couple the first package substrate to a printed circuit board.

    OVER-MOLDED IC PACKAGES WITH EMBEDDED VOLTAGE REFERENCE PLANE & HEATER SPREADER

    公开(公告)号:US20180366407A1

    公开(公告)日:2018-12-20

    申请号:US15982912

    申请日:2018-05-17

    Abstract: Over-molded IC package assemblies including an embedded voltage reference plane and/or heat spreader. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more conductive layers are embedded within the molding compound. The conductive layers may include an interior portion located over the IC chip and a peripheral portion located over the redistribution layers or package substrate. The interior portion may comprise one or more heat conductive features, which may physically contact a surface of the IC chip. In some further embodiments, the peripheral portion comprises one or more electrically conductive features, which may physically contact a surface of the package redistribution layers or package substrate to convey a reference voltage. One or more conductive traces may connect the conductive features in the interior with conductive features in the periphery.

    MICRO THROUGH-SILICON VIA FOR TRANSISTOR DENSITY SCALING

    公开(公告)号:US20240429131A1

    公开(公告)日:2024-12-26

    申请号:US18824468

    申请日:2024-09-04

    Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

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