公开(公告)号：US20140183664A1

公开(公告)日：2014-07-03

申请号：US13728026

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： Sergey Barabash ,  Dipankar Pramanik ,  Xuena Zhang

IPC: H01L29/51 ,  H01L29/40

CPC classification number: H01L29/401 ,  B82Y10/00 ,  H01L21/28255 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66181 ,  H01L29/78 ,  H01L29/94

Abstract: A doped fullerene-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the doped fullerene-based electrode, e.g., the conduction band minimum of the dielectric falls into one of the band gaps of the doped fullerene-based material, thermionic leakage through the dielectric can be reduced, since the excited electrons or holes in the electrode would need higher thermal excitation energy to overcome the band gap before passing through the dielectric layer.

Abstract translation: 可以使用掺杂的富勒烯类导电材料作为电极，其可以与诸如高k电介质的电介质接触。 通过将电介质与掺杂的富勒烯类电极的带隙对准，例如，电介质的导带最小值落入掺杂的富勒烯类材料的带隙之一中，可以减少通过电介质的热离子泄漏，因为 电极中的激发的电子或空穴将需要更高的热激发能量以克服通过介电层之前的带隙。

公开(公告)号：US20140170833A1

公开(公告)日：2014-06-19

申请号：US13716375

申请日：2012-12-17

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC.

Inventor： Xiangxin Rui ,  Sergey Barabash

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

Abstract translation: 用于减少DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成包含掺杂在电介质层内的氧供体掺杂剂的电容器堆叠。 在形成电介质层期间，可将氧供体掺杂物掺入电介质层内。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。