公开(公告)号：US20140187018A1

公开(公告)日：2014-07-03

申请号：US13731452

申请日：2012-12-31

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC.

Inventor： Sandra G. Malhotra ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L49/02

CPC classification number: H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.

Abstract translation: 一种降低DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括在电介质层和第一电极层之间形成闪电层。 降低DRAM金属 - 绝缘体 - 金属电容器中漏电流的方法包括在电介质层和第二电极层之间形成覆盖层。 闪光层和覆盖层可以使用原子层沉积（ALD）技术形成。 选择用于形成闪光层和覆盖层的前体材料，使得它们包括至少一种金属 - 氧键。 此外，前体材料被选择为也包括“体积大”的配体。

公开(公告)号：US20130270673A1

公开(公告)日：2013-10-17

申请号：US13915050

申请日：2013-06-11

Applicant: Elpida Memory, Inc ,  Intermolecular, Inc.

Inventor： Xiangxin Rui ,  Hiroyuki Ode

IPC: H01L49/02

CPC classification number: H01L28/65 ,  H01L28/40 ,  H01L28/60

Abstract: A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode layers are conductive molybdenum oxide.

Abstract translation: 形成用于MIM DRAM电容器的金属氧化物第一电极层，其中第一和/或第二电极层含有一个或多个掺杂剂，直到总掺杂浓度，其将不会阻止电极层在随后的退火步骤期间结晶。 一种或多种掺杂剂具有大于约5.0eV的功函数。 一种或多种掺杂剂具有小于约1000μmOcm的电阻率。 有利地，电极层是导电性氧化钼。

公开(公告)号：US08476141B2

公开(公告)日：2013-07-02

申请号：US13737785

申请日：2013-01-09

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

Inventor： Sandra Malhotra ,  Hanhong Chen ,  Wim Deweerd ,  Mitsuhiro Horikawa ,  Kenichi Koyanagi ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L21/20 ,  H01L21/31

CPC classification number: H01L28/60 ,  H01L28/40 ,  H01L28/75

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

公开(公告)号：US20130143384A1

公开(公告)日：2013-06-06

申请号：US13737785

申请日：2013-01-09

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC

Inventor： Sandra Malhotra ,  Hanhong Chen ,  Wim Deweerd ,  Mitsuhiro Horikawa ,  Kenichi Koyanagi ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L28/40 ,  H01L28/75

Abstract: A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.

公开(公告)号：US09012298B2

公开(公告)日：2015-04-21

申请号：US13731452

申请日：2012-12-31

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc

Inventor： Sandra G. Malhotra ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L21/02 ,  H01G4/008 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.

公开(公告)号：US08846468B2

公开(公告)日：2014-09-30

申请号：US13716375

申请日：2012-12-17

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc

Inventor： Xiangxin Rui ,  Sergey Barabash

IPC: H01L21/00 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

Abstract translation: 用于减少DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成包含掺杂在电介质层内的氧供体掺杂剂的电容器堆叠。 在形成电介质层期间，可将氧供体掺杂物掺入电介质层内。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。

公开(公告)号：US08815695B2

公开(公告)日：2014-08-26

申请号：US13727898

申请日：2012-12-27

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc

Inventor： Xiangxin Rui ,  Mitsuhiro Horikawa ,  Hiroyuki Ode ,  Karthik Ramani

IPC: H01L21/02 ,  H01L27/108 ,  H01L29/92 ,  H01L21/8242 ,  H01L21/316 ,  H01L27/04 ,  H01L49/02

CPC classification number: H01L28/40 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.

Abstract translation: 形成金属绝缘体金属（MIM）DRAM电容器的第一电极层，其中第一电极层包含导电基底层和导电金属氧化物层。 形成金属绝缘体金属（MIM）DRAM电容器的第二电极层，其中第二电极层包含导电基底层和导电金属氧化物层。 在一些实施例中，第一电极层和第二电极层都包含导电基底层和导电金属氧化物层。

公开(公告)号：US20140183695A1

公开(公告)日：2014-07-03

申请号：US13731548

申请日：2012-12-31

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC.

Inventor： Sandra G. Malhotra ,  Hiroyuki Ode ,  Xiangxin Rui

IPC: H01L49/02

CPC classification number: H01L28/56 ,  H01L28/65 ,  H01L28/75

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.

公开(公告)号：US20140170833A1

公开(公告)日：2014-06-19

申请号：US13716375

申请日：2012-12-17

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC.

Inventor： Xiangxin Rui ,  Sergey Barabash

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

Abstract translation: 用于减少DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成包含掺杂在电介质层内的氧供体掺杂剂的电容器堆叠。 在形成电介质层期间，可将氧供体掺杂物掺入电介质层内。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。

公开(公告)号：US20130069202A1

公开(公告)日：2013-03-21

申请号：US13677536

申请日：2012-11-15

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC

Inventor： Xiangxin Rui ,  Takashi Arao ,  Hanhong Chen ,  Naonori Fujiwara ,  Edward Haywood ,  Toshiyuki Hirota ,  Takakazu Kiyomura ,  Kenichi Koyanagi ,  Sandra G. Malhotra

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L21/02 ,  H01L27/1085 ,  H01L28/40

Abstract: A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.