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    High Productivity Combinatorial Material Screening for Stable, High-Mobility Non-Silicon Thin Film Transistors
    41.
    发明申请
    High Productivity Combinatorial Material Screening for Stable, High-Mobility Non-Silicon Thin Film Transistors 有权
    高生产率组合材料筛选稳定，高迁移率非硅薄膜晶体管

    公开(公告)号：US20150179684A1

    公开(公告)日：2015-06-25

    申请号：US14135086

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le

    IPC: H01L27/12 ,  H01L21/465 ,  H01L21/66 ,  H01L21/02

    CPC classification number: H01L27/1259 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/465 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor deposition, metal-based patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，基于金属的半导体沉积，基于金属的图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化中的至少一个。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    High Productivity Combinatorial Material Screening for Metal Oxide Films
    42.
    发明申请
    High Productivity Combinatorial Material Screening for Metal Oxide Films 有权
    金属氧化物膜的高生产率组合材料筛选

    公开(公告)号：US20150179683A1

    公开(公告)日：2015-06-25

    申请号：US14134571

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Minh Huu Le ,  Sang Lee ,  Jeroen Van Duren

    IPC: H01L27/12 ,  H01L21/66 ,  H01L21/02

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) deposition, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）沉积，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）中的至少一种， 图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    TCOs for High-Efficiency Crystalline Si Heterojunction Solar Cells
    45.
    发明申请
    TCOs for High-Efficiency Crystalline Si Heterojunction Solar Cells 审中-公开
    高效率晶体Si异质结太阳能电池的TCOs

    公开(公告)号：US20140170806A1

    公开(公告)日：2014-06-19

    申请号：US13719105

    申请日：2012-12-18

    Applicant: INTERMOLECULAR, INC.

    Inventor： Jeroen Van Duren ,  Minh Huu Le

    IPC: H01L31/0224

    CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

    Abstract: Methods are used to develop and evaluate new processes for cleaning and texturing substrates and layers used in HJCS solar cells. In some embodiments, methods are used to develop and evaluate new processes for the deposition of resistive metal oxide interface layers that are formed between the TCO layers and the a-Si:H layers. The resistive metal oxide interface layers form good ohmic contact to the a-Si:H layers. In some embodiments, methods are used to develop and evaluate new processes for the deposition of amorphous TCO layers. The amorphous TCO layers allow improved control over the layer thickness and morphology. In some embodiments, methods are used to develop and evaluate new processes for the deposition of anti-reflection coating materials. The anti-reflection coating materials are selected to decrease the reflectivity of the solar cell and maintain the high conductivity of the TCO materials.

    Abstract translation: 方法用于开发和评估用于HJCS太阳能电池中使用的衬底和层的清洁和纹理化的新工艺。 在一些实施例中，使用方法来开发和评估在TCO层和a-Si：H层之间形成的电阻金属氧化物界面层的沉积的新工艺。 电阻金属氧化物界面层与a-Si：H层形成良好的欧姆接触。 在一些实施例中，使用方法来开发和评估沉积无定形TCO层的新工艺。 无定形TCO层允许改善对层厚度和形态的控制。 在一些实施例中，使用方法来开发和评估用于沉积抗反射涂层材料的新工艺。 选择防反射涂层材料以降低太阳能电池的反射率并保持TCO材料的高导电性。

    High efficiency CZTSe by a two-step approach
    46.
    发明申请
    High efficiency CZTSe by a two-step approach 审中-公开
    高效CZTSe采用两步法

    公开(公告)号：US20140113403A1

    公开(公告)日：2014-04-24

    申请号：US14139309

    申请日：2013-12-23

    Applicant: INTERMOLECULAR INC.

    Inventor： Jeroen Van Duren ,  Ben Cardozo ,  Haifan Liang

    IPC: H01L31/18

    CPC classification number: H01L21/02568 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541

    Abstract: Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu—Zn—Sn—(S, Se) precursor film is formed by sputtering. The Cu—Zn—Sn—(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The composition may be uniform or graded throughout the thickness of the film. In some embodiments, the sputtering is performed in a reactive atmosphere including a chalcogen source (e.g. H2S, H2Se, etc.). The films, in conjunction with a subsequent selenization or anneal process, are converted to an absorber layer.

    Abstract translation: 提供了在具有或不具有分级浓度的梯度带隙的TFPV装置中形成CZTS吸收层的方法。 通常，通过溅射形成Cu-Zn-Sn-（S，Se）前体膜。 Cu-Zn-Sn-（S，Se）前体膜可以形成为单层或多层叠层。 组合物可以在膜的整个厚度上均匀或分级。 在一些实施方案中，溅射是在包括硫族元素源（例如H 2 S，H 2 Se等）的反应性气氛中进行的。 该膜与随后的硒化或退火工艺一起被转化为吸收层。

    Laser Annealing for Thin Film Solar Cells
    47.
    发明申请
    Laser Annealing for Thin Film Solar Cells 审中-公开
    激光退火薄膜太阳能电池

    公开(公告)号：US20140007938A1

    公开(公告)日：2014-01-09

    申请号：US14019413

    申请日：2013-09-05

    Applicant: Intermolecular, Inc.

    Inventor： Haifan Liang ,  Zhi-Wen Sun ,  Jeroen Van Duren

    IPC: H01L31/0749

    CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

    Abstract translation: 使用激光退火技术形成铜铟镓（硫化物）硒化物（CIGS）太阳能电池，碲化镉（CdTe）太阳能电池和铜锌锡（硫化物）硒化物（CZTS））太阳能电池的方法来使吸收体和/或 缓冲层。 激光退火可能导致更好的结晶度，更低的表面粗糙度，更大的晶粒尺寸，更好的组成均匀性，复合中心的减少和增加的致密化。 另外，激光退火可能导致形成非平衡相，有利的结果。

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