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    SECURE SEMICONDUCTOR CHIP BY PIEZOELECTRICITY
    46.
    发明申请
    SECURE SEMICONDUCTOR CHIP BY PIEZOELECTRICITY 审中-公开

    公开(公告)号：US20190326229A1

    公开(公告)日：2019-10-24

    申请号：US16460323

    申请日：2019-07-02

    Applicant: International Business Machines Corporation

    Inventor： Kangguo Cheng ,  Qing Cao ,  Fei Liu ,  Zhengwen Li

    IPC: H01L23/00 ,  G01L1/16 ,  H01L41/311 ,  H01L27/20 ,  H01L41/25

    Abstract: The subject disclosure relates to techniques for providing semiconductor chip security using piezoelectricity. According to an embodiment, an apparatus is provided that comprises an integrated circuit chip comprising a pass transistor that electrically connects two or more electrical components of the integrated circuit chip. The apparatus further comprises a piezoelectric element electrically connected to a gate electrode of the pass transistor; and a packaging component that is physically connected to the piezoelectric element and applies a mechanical force to the piezoelectric element, wherein the piezoelectric element generates and provides a voltage to the gate electrode as a result of the mechanical force, thereby causing the pass transistor to be in an on-state. In one implementation, the two or more electrical components comprise a circuit and a power source. In another implementation, the two or more electrical components comprise two circuits.

    SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH
    47.
    发明申请
    SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH 审中-公开

    公开(公告)号：US20190319184A1

    公开(公告)日：2019-10-17

    申请号：US15950754

    申请日：2018-04-11

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Qing Cao ,  Jianshi Tang ,  Ning Li

    IPC: H01L45/00

    Abstract: A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.

    End-bonded metal contacts on carbon nanotubes
    49.
    发明授权
    End-bonded metal contacts on carbon nanotubes 有权

    公开(公告)号：US10319927B2

    公开(公告)日：2019-06-11

    申请号：US14951847

    申请日：2015-11-25

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang

    IPC: H01L21/20 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

    Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

    End-bonded metal contacts on carbon nanotubes
    50.
    发明授权
    End-bonded metal contacts on carbon nanotubes 有权

    公开(公告)号：US10319926B2

    公开(公告)日：2019-06-11

    申请号：US14933339

    申请日：2015-11-05

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang

    IPC: H01L29/06 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05

    Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

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