公开(公告)号：US10446752B2

公开(公告)日：2019-10-15

申请号：US15662522

申请日：2017-07-28

Applicant: InnoLux Corporation

Inventor： Chun-Hsien Lin ,  Ming-Chang Lin ,  Tzu-Min Yan ,  Tsau-Hua Hsieh ,  Tung-Kai Liu ,  Jui-Feng Ko ,  Hui-Chieh Wang

IPC: H01L51/00 ,  H01L27/28 ,  H01L27/32 ,  H01L21/48

Abstract: A light-emitting diode display device includes a light-emitting diode and a substrate. The light-emitting diode includes a central axis, and the substrate includes a first connecting portion and a second connecting portion. The central axis is extended through the first connecting portion. The second connecting portion is disposed outside of the first connecting portion and is spaced apart from the first connecting portion by a distance which is greater than zero, and the first connecting portion and the second connecting portion are respectively electrically connected to the light-emitting diode.

公开(公告)号：US10121839B2

公开(公告)日：2018-11-06

申请号：US15415838

申请日：2017-01-25

Applicant: Innolux Corporation

Inventor： Kuan-Feng Lee ,  Ming-Chang Lin ,  Tzu-Min Yan

IPC: H01L27/32 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/786

Abstract: A display device including a TFT substrate and a display layer is provided. The TFT substrate includes a substrate, a gate layer, a semiconductor layer, a gate dielectric layer, a first electrode layer, a first passivation layer, a second passivation layer, and a second electrode layer. A via penetrates the first passivation layer and the second passivation layer to expose a portion of the first electrode layer, and the via has a sidewall. The second electrode layer is electrically connected to the first electrode layer through the via, the first passivation layer has a first edge on the sidewall of the via, the second passivation layer has a second edge on the sidewall of the via, and the first edge and the second edge are separated by a distance in the range of 500-2000 Å.

公开(公告)号：US09947690B2

公开(公告)日：2018-04-17

申请号：US15363487

申请日：2016-11-29

Applicant: InnoLux Corporation

Inventor： Tzu-Min Yan

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/137

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/133514 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/137 ,  G02F2001/133388 ,  G02F2001/134345 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/50 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3211 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/7869

Abstract: A display panel is disclosed. The display panel includes a first substrate, a display layer, a first conductive layer, a first insulation layer, a first protective layer, and a second insulation layer. The first substrate includes an active area and a peripheral area located adjacent to the active area. The display layer is disposed over the first substrate. The first conductive layer is disposed over the first substrate and located in the peripheral area. The first insulation layer is disposed between the first substrate and the first conductive layer. The first protective layer covers the first conductive layer. The second insulation layer is disposed over the first protective layer. The display panel according to the disclosure has better corrosion resistance to improve its reliability.

公开(公告)号：US09911762B2

公开(公告)日：2018-03-06

申请号：US15363289

申请日：2016-11-29

Applicant: InnoLux Corporation

Inventor： Tzu-Min Yan ,  Ming-Chang Lin ,  Kuan-Feng Lee

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/133345 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78696

Abstract: A display device is provided, which includes a substrate structure containing a substrate with a pixel region, and the pixel region includes an aperture region. A metal oxide semiconductor transistor is disposed over the substrate and includes a metal oxide semiconductor layer with a first channel region, a first gate electrode corresponding to the first channel region, and a silicon oxide insulating layer on the metal oxide semiconductor layer. The silicon oxide insulating layer includes an opening corresponding to the aperture region. A polysilicon transistor is disposed over the substrate. The display device also includes an opposite substrate structure, and a display medium between the substrate structure and the opposite substrate structure.

公开(公告)号：US09704892B2

公开(公告)日：2017-07-11

申请号：US15018861

申请日：2016-02-08

Applicant: Innolux Corporation

Inventor： Hsiao-Ping Lai ,  Chao-Liang Lu ,  Tzu-Min Yan ,  Tsau-Hua Hsieh

IPC: H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362

CPC classification number: G02F1/136209 ,  G02F1/134309 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/134318 ,  G02F2001/134372 ,  G02F2001/136218 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/78633

Abstract: A display panel including a first substrate, a second substrate and a display medium is provided. The first substrate includes a base substrate, a gate, an active layer, a source, a drain, and a shielding structure. The gate is disposed on the base substrate. The active layer is electrically insulated from and disposed correspondingly to the gate. The source and the drain are electrically connected to the active layer. The shielding structure is disposed on the active layer and covers at least part of the active layer. The shielding structure includes a metal layer and an anti-reflection structure. The display medium is disposed between the first substrate and the second substrate.

公开(公告)号：US09640563B2

公开(公告)日：2017-05-02

申请号：US14880472

申请日：2015-10-12

Applicant: InnoLux Corporation

Inventor： Kuan-Feng Lee ,  Tzu-Min Yan

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/124

Abstract: Disclosed is a TFT substrate, including a substrate and a gate electrode thereon. A gate insulation layer over the substrate covers the gate electrode. An active layer is disposed over the gate insulation layer. An etch stop layer is disposed over the active layer and the gate insulation layer. A first opening penetrates the etch stop layer to expose a first part of the active layer. A source electrode over the etch stop layer is electrically connected to the first part of the active layer through the first opening. A first inorganic insulation layer is disposed over the source electrode and the etch stop layer. A second opening penetrates the first inorganic insulation layer and the etch stop layer to expose a second part of the active layer.