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公开(公告)号：US07503028B2
公开(公告)日：2009-03-10
申请号：US11306750
申请日：2006-01-10
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method is provided for designing a mask layout for an integrated circuit that ensures proper functional interaction among circuit features by including functional inter-layer and intra-layer constraints on the wafer. The functional constraints used according to the present invention are applied among the simulated wafer images to ensure proper functional interaction, while relaxing or eliminating the EPE constraints on the location of the wafer images.
摘要翻译： 提供了一种用于设计用于集成电路的掩模布局的方法，其通过在晶片上包括功能层间和层内约束来确保电路特征之间的适当的功能交互。 根据本发明使用的功能约束应用于模拟晶片图像中，以确保正确的功能交互，同时放松或消除对晶片图像的位置的EPE约束。
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42.发明申请公开(公告)号：US20080163153A1
公开(公告)日：2008-07-03
申请号：US11619320
申请日：2007-01-03
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method, system and computer program product for verifying printability of a mask layout for a photolithographic process are disclosed. A simulation of the photolithographic process for the designed mask layout is simulated using a simplified version of the mask layout with a lower accuracy to generate a lower accuracy simulated image. Where the lower accuracy simulated image is determined as potentially including an error, a further simulation of the designated portion of the mask layout with a higher accuracy will be performed.
摘要翻译： 公开了一种用于验证光刻工艺的掩模布局的可印刷性的方法，系统和计算机程序产品。 使用精度较低的掩模布局的简化版本来模拟设计的掩模布局的光刻工艺的模拟，以产生较低精度的模拟图像。 在将低精度模拟图像确定为潜在地包括错误的情况下，将执行具有更高精度的掩模布局的指定部分的进一步模拟。
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公开(公告)号：US07350183B2
公开(公告)日：2008-03-25
申请号：US10904355
申请日：2004-11-05
申请人： Yuping Cui , Scott M. Mansfield
发明人： Yuping Cui , Scott M. Mansfield
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70433
摘要： A method for performing model based optical proximity correction (MBOPC) and a system for performing MBOPC is described, wherein the process model is decomposed into a constant process model term and a pattern dependent portion. The desired wafer target is modified by the constant process model term to form a simulation target that is used as the new target within the MBOPC process. The pattern dependent portion of the model is used as the process model in the MBOPC algorithm. This results final mask designs that result in improved across-chip line width variations, and a more robust MBOPC process.
摘要翻译： 描述了一种用于执行基于模型的光学邻近校正（MBOPC）的方法和用于执行MBOPC的系统，其中所述过程模型被分解为恒定过程模型项和模式相关部分。 通过恒定过程模型项修改所需的晶片靶，以形成用作MBOPC过程中的新目标的模拟目标。 该模型的模式相关部分被用作MBOPC算法中的过程模型。 这导致最终的掩模设计，导致跨芯片线宽变化的改进，以及更强大的MBOPC过程。
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公开(公告)号：US06346979B1
公开(公告)日：2002-02-12
申请号：US09270696
申请日：1999-03-17
IPC分类号： G03B2742
CPC分类号： G03F7/70558 , G03F7/70358
摘要： A process and apparatus for dynamically adjusting the exposure dose on a photosensitive coating at a localized area within an exposure field in a step-and-scan lithography system. The process and apparatus form a pattern on a photosensitive substrate, such as used in the integrated circuit manufacturing industry. The exposure dose is adjusted at a localized area by a segmented slit system or an array of light-transmitting pixels located across the exposure field. The slit segments or individual pixels are automatically controlled in response to data obtained regarding the uniformity of the projection optics system or the mask pattern.
摘要翻译： 一种用于在步进扫描光刻系统中的曝光场内的局部区域上动态调节感光涂层上的曝光剂量的方法和装置。 该工艺和设备在诸如在集成电路制造工业中使用的感光基底上形成图案。 通过分段狭缝系统或位于曝光区域周围的透光像素阵列在局部区域调节曝光剂量。 响应于关于投影光学系统或掩模图案的均匀性获得的数据，自动控制狭缝段或单个像素。
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45.发明授权Method and apparatus for compensating thermal lensing effects in a laser cavity 失效用于补偿激光腔中的热透镜效应的方法和装置
公开(公告)号：US5757842A
公开(公告)日：1998-05-26
申请号：US672288
申请日：1996-06-28
CPC分类号： H01S3/102 , H01S3/005 , H01S3/0071 , H01S3/025 , H01S3/0407 , H01S3/042 , H01S3/061 , H01S3/0805 , H01S3/08072 , H01S3/093 , H01S3/09415 , H01S3/1022 , H01S3/1026
摘要： In a laser cavity having an optical axis, a laser medium for forming a laser beam, the laser medium having a central axis off-set from the optical axis, the laser medium exhibiting focusing characteristics that vary with changes in optical power pumped into the laser medium, at least one pair of mirrors oppositely positioned for reflecting at least a portion of the laser beam, one of the mirrors being an output coupler, the laser cavity further comprising at least one focusing element having a central axis positioned between one of the mirrors and the laser medium such that the central axis of the focusing element is displaced from the optical axis a distance that is a function of the displacement of the laser medium central axis from the optical axis and the optical axis passes through the focusing element to substantially eliminate lensing effects produced by the laser medium.
摘要翻译： 在具有光轴的激光腔中，用于形成激光束的激光介质，激光介质具有从光轴偏离的中心轴，激光介质表现出聚焦特性，其随着泵入激光器的光功率的变化而变化 介质，至少一对反射镜对，其对应于所述激光束的至少一部分，所述反射镜中的一个是输出耦合器，所述激光腔还包括至少一个聚焦元件，所述聚焦元件具有位于所述反射镜之一之间的中心轴 以及激光介质，使得聚焦元件的中心轴线从光轴移动一定距离，该距离是激光介质中心轴线与光轴的位移的函数，并且光轴通过聚焦元件以基本上消除 由激光介质产生的透镜效应。
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