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公开(公告)号：US06346979B1
公开(公告)日：2002-02-12
申请号：US09270696
申请日：1999-03-17
IPC分类号： G03B2742
CPC分类号： G03F7/70558 , G03F7/70358
摘要： A process and apparatus for dynamically adjusting the exposure dose on a photosensitive coating at a localized area within an exposure field in a step-and-scan lithography system. The process and apparatus form a pattern on a photosensitive substrate, such as used in the integrated circuit manufacturing industry. The exposure dose is adjusted at a localized area by a segmented slit system or an array of light-transmitting pixels located across the exposure field. The slit segments or individual pixels are automatically controlled in response to data obtained regarding the uniformity of the projection optics system or the mask pattern.
摘要翻译： 一种用于在步进扫描光刻系统中的曝光场内的局部区域上动态调节感光涂层上的曝光剂量的方法和装置。 该工艺和设备在诸如在集成电路制造工业中使用的感光基底上形成图案。 通过分段狭缝系统或位于曝光区域周围的透光像素阵列在局部区域调节曝光剂量。 响应于关于投影光学系统或掩模图案的均匀性获得的数据，自动控制狭缝段或单个像素。
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2.发明授权公开(公告)号：US07824844B2
公开(公告)日：2010-11-02
申请号：US11624744
申请日：2007-01-19
申请人： Zhong Xiang , Hengpeng Wu , Hong Zhuang , Eleazar Gonzalez , Mark O. Neisser
发明人： Zhong Xiang , Hengpeng Wu , Hong Zhuang , Eleazar Gonzalez , Mark O. Neisser
IPC分类号： G03F7/40 , G03F7/30 , G03F7/11 , C08F8/30 , H01L21/027
CPC分类号： G03F7/091 , C09D7/20 , G03F7/0048
摘要： The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R1, R3, and R4, are selected from H and C1-C6 alkyl, and R2, R5, R6, R7, R8, and R9 are selected from C1-C6 alkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.
摘要翻译： 本发明涉及一种抗反射涂料组合物，其能够涂覆在光致抗蚀剂层下面，其中抗反射涂料组合物包含聚合物交联剂和溶剂混合物，其中溶剂混合物包含至少一种主要有机溶剂和至少一种选择的二级有机溶剂 其中R 1，R 3和R 4选自H和C 1 -C 6烷基，R 2，R 5，R 6，R 7，R 8和R 9选自C 1 -C 6烷基， n = 1-5。 本发明还涉及能够涂覆在光致抗蚀剂层下面的抗反射涂料组合物，其中抗反射涂料组合物包含聚合物交联剂和溶剂混合物，其中溶剂混合物包含至少2种有机溶剂，并且其中抗反射涂料组合物具有 在加速老化后，0.2微米的液体颗粒数小于100 / ml。
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公开(公告)号：US20070298349A1
公开(公告)日：2007-12-27
申请号：US11425813
申请日：2006-06-22
申请人： Ruzhi Zhang , Mark O. Neisser , Woo-Kyu Kim , David J. Abdallah , Francis Houlihan , Ping-Hung Lu , Hong Zhuang
发明人： Ruzhi Zhang , Mark O. Neisser , Woo-Kyu Kim , David J. Abdallah , Francis Houlihan , Ping-Hung Lu , Hong Zhuang
IPC分类号： G03C1/00
CPC分类号： C09D183/04 , G03F7/038 , G03F7/0757 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： The present invention relates to a novel antireflective coating composition for forming an underlayer for a photoresist comprising an acid generator and a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1), where m is 0 or 1, W and W′ are independently a valence bond or a connecting group linking the cyclic ether to the silicon of the polymer and L is selected from hydrogen, W′ and W, or L and W′ are combined to comprise a cycloaliphatic linking group linking the cyclic ether to the silicon of the polymer. The invention also relates to a process for imaging the photoresist coated over the novel antireflective coating composition and provides good lithographic results. The invention further relates to a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1).
摘要翻译： 本发明涉及一种用于形成光致抗蚀剂底层的新型抗反射涂料组合物，其包含酸产生剂和新型硅氧烷聚合物，其中硅氧烷聚合物包含至少一种吸收发色团和至少一种结构（1）的自交联官能团， 其中m为0或1，W和W'独立地为价键或连接环状醚与聚合物硅的连接基团，L选自氢，W'和W，或L和W'组合 包括将环醚与聚合物的硅连接的脂环族连接基团。 本发明还涉及一种用于对涂覆在新型抗反射涂料组合物上的光致抗蚀剂进行成像的方法，并提供良好的光刻结果。 本发明还涉及新的硅氧烷聚合物，其中硅氧烷聚合物包含至少一种吸收发色团和至少一种结构（1）的自交联官能团。
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公开(公告)号：US5795685A
公开(公告)日：1998-08-18
申请号：US783631
申请日：1997-01-14
申请人： Lars W. Liebmann , Burn Jeng Lin , Mark O. Neisser
发明人： Lars W. Liebmann , Burn Jeng Lin , Mark O. Neisser
IPC分类号： G03F1/26 , G03F1/72 , H01L21/027 , G03F9/00
摘要： A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.
摘要翻译： 一种用于校正用于光刻中的相移掩模中的缺陷的方法和装置。 更具体地，本发明的方法包括创建包含移相器的第二修复掩模。 围绕第一掩模上的缺陷的区域变得不透明。 位于这些缺陷区域中的设计电路被复制到第二掩模上。 在第二曝光期间，将设计电路放置在半导体晶片上。 因此，该方法和装置为困难的问题提供了便宜的解决方案。
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公开(公告)号：US08039202B2
公开(公告)日：2011-10-18
申请号：US11877891
申请日：2007-10-24
申请人： Yu Sui , Hengpeng Wu , Wenbing Kang , Mark O. Neisser , Tomohide Katayama , Shuji S. Ding-Lee , Aritaka Hishida , Joseph E. Oberlander , Medhat E. Toukhy
发明人： Yu Sui , Hengpeng Wu , Wenbing Kang , Mark O. Neisser , Tomohide Katayama , Shuji S. Ding-Lee , Aritaka Hishida , Joseph E. Oberlander , Medhat E. Toukhy
IPC分类号： G03F7/26
CPC分类号： G03F7/091 , G03F7/0392 , Y10S430/115 , Y10S438/952
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.
摘要翻译： 本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂。 本发明还涉及使用这种组合物的方法。
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公开(公告)号：US20110076626A1
公开(公告)日：2011-03-31
申请号：US12570923
申请日：2009-09-30
申请人： Munirathna Padmanaban , Srinivasan Chakrapani , Francis M. Houlihan , Shinji Miyazaki , Edward Ng , Mark O. Neisser
发明人： Munirathna Padmanaban , Srinivasan Chakrapani , Francis M. Houlihan , Shinji Miyazaki , Edward Ng , Mark O. Neisser
CPC分类号： G03F7/091
摘要： The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.
摘要翻译： 本发明涉及能够在碱性水溶液中通过显影形成图案的可光成像抗反射涂料组合物，其包含（i）可溶于涂布溶剂中的聚合物A，其包含发色团，交联部分和任选的可裂解基团， 在酸或热条件下产生有助于聚合物在碱性水溶液中的溶解度的功能; （ii）至少一种光致酸发生剂; （iii）交联剂; （iv）任选的热酸产生剂; （v）聚合物B，其在显影前可溶于碱性水溶液，其中聚合物B与聚合物A不可混溶并可溶于涂布溶剂中; （vi）涂料溶剂组合物，和（vii）任选的猝灭剂。 本发明还涉及用于对抗反射涂层进行成像的方法。
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公开(公告)号：US07081511B2
公开(公告)日：2006-07-25
申请号：US10817987
申请日：2004-04-05
申请人： Hengpeng Wu , Jianhui Shan , Shuji Sue Ding-Lee , Zhong Xhiang , Eleazor B. Gonzalez , Mark O. Neisser
发明人： Hengpeng Wu , Jianhui Shan , Shuji Sue Ding-Lee , Zhong Xhiang , Eleazor B. Gonzalez , Mark O. Neisser
IPC分类号： C08G63/00
CPC分类号： C08J7/047 , C08G63/46 , C08G63/916 , C08J2383/00 , C08J2467/00 , Y10T428/31504 , Y10T428/31786
摘要： The present invention relates to a process for making a polyester where a dianhydride is reacted with a diol. The resulting polyester can be further reacted with a compound selected from aromatic oxides, aliphatic oxides, alkylene carbonates, alcohols, and mixtures thereof.
摘要翻译： 本发明涉及一种制备其中二酐与二醇反应的聚酯的方法。 所得聚酯可以进一步与选自芳族氧化物，脂族氧化物，碳酸亚烷基酯，醇及其混合物的化合物反应。
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公开(公告)号：US5563012A
公开(公告)日：1996-10-08
申请号：US269853
申请日：1994-06-30
申请人： Mark O. Neisser
发明人： Mark O. Neisser
CPC分类号： G03F1/32 , G03F1/29 , G03F1/70 , G03F7/2022 , G03F7/70466
摘要： The preferred embodiment of the present invention is a method of enhancing normally unenhanced features types. Pattern shapes are placed on two or more relatively simple, modified masks instead of using a single mask containing diverse feature types. On these modified masks, (hereinafter "overlay masks"), all of the features are the type normally enhanced. A composite pattern is printed into photoresist through successive exposure to the overlay masks.
摘要翻译： 本发明的优选实施例是增强通常未增强的特征类型的方法。 图形形状被放置在两个或更多个相对简单的修改的掩码上，而不是使用包含不同特征类型的单个掩码。 在这些修改的掩模（以下称为“覆盖掩模”）上，所有特征都是通常增强的类型。 复合图案通过连续曝光到覆盖掩模上而被印刷到光致抗蚀剂中。
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公开(公告)号：US08551686B2
公开(公告)日：2013-10-08
申请号：US12609222
申请日：2009-10-30
申请人： Huirong Yao , Guanyang Lin , Mark O. Neisser
发明人： Huirong Yao , Guanyang Lin , Mark O. Neisser
IPC分类号： G03F7/11 , G03F7/38 , G03F7/40 , C09D167/00 , H01L21/027
CPC分类号： C09D167/02 , C08G63/16 , G03F7/091
摘要： The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) moiety and mixture thereof, R′ is a group of structure (2), R″ is independently selected from hydrogen, a moiety of structure (2), Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbylene linking moiety, and, Y′ is independently a (C1-C20) hydrocarbylene linking moiety, where structure (2) is where R1 and R2 are independently selected from H and C1-C4alkyl and L is an organic hydrocarbyl group. The invention further relates to a process for imaging the antireflective coating composition.
摘要翻译： 本发明涉及一种用于光致抗蚀剂层的抗反射涂料组合物，其包含聚合物，交联剂和酸产生剂，其中聚合物包含至少一个结构单元1，其中X是选自非芳族（A） 部分，芳族（P）部分及其混合物，R'是结构（2）的基团，R“独立地选自氢，结构（2）的部分，Z和W-OH，其中Z是（ C1-C20）烃基部分，W是（C1-C20）亚烃基连接部分，Y'独立地是（C1-C20）亚烃基连接部分，其中结构（2）是其中R 1和R 2独立地选自H 和C 1 -C 4烷基，L是有机烃基。 本发明还涉及一种用于对抗反射涂料组合物进行成像的方法。
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10.发明授权Process for producing an image using a first minimum bottom antireflective coating composition 有权使用第一最小底部抗反射涂料组合物制造图像的方法公开(公告)号：US07070914B2
公开(公告)日：2006-07-04
申请号：US10042878
申请日：2002-01-09
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/095 , Y10S430/151
摘要： Disclosed is a process for forming an image on a substrate, comprising the steps of: (a) coating on the substrate a first layer of a radiation sensitive, antireflective composition; (b) coating a second layer of a photoresist composition onto the first layer of the antireflective composition; (c) selectively exposing the coated substrate from step (b) to actinic radiation; and (d) developing the exposed coated substrate from step (c) to form an image; wherein both the photoresist composition and the antireflective composition are exposed in step (c); both are developed in step (d) using a single developer; wherein the antireflective composition of step (a) is a first minimum bottom antireflective coating (B.A.R.C.) composition, having a solids content of up to about 8% solids, and a maximum coating thickness of the coated substrate of λ 2 n wherein λ is the wavelength of the actinic radiation of step (c) and n is the refractive index of the B.A.R.C. composition.
摘要翻译： 公开了一种在衬底上形成图像的方法，包括以下步骤：（a）在衬底上涂覆第一层辐射敏感的抗反射组合物; （b）将第二层光致抗蚀剂组合物涂覆到抗反射组合物的第一层上; （c）将涂覆的基材从步骤（b）选择性暴露于光化辐射; 和（d）将来自步骤（c）的曝光的涂覆的基底显影以形成图像; 其中在步骤（c）中曝光光致抗蚀剂组合物和抗反射组合物; 在步骤（d）中使用单个显影剂开发两者; 其中步骤（a）的抗反射组合物是具有固体含量高达约8％固体的第一最小底部抗反射涂层（BARC）组合物，并且涂覆的基材的最大涂层厚度为
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