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158 条记录 (耗时 0.041 秒)

    III-V MOSFET Fabrication and Device
    42.
    发明申请
    III-V MOSFET Fabrication and Device 有权
    III-V MOSFET制造和器件

    公开(公告)号：US20090189252A1

    公开(公告)日：2009-07-30

    申请号：US12022942

    申请日：2008-01-30

    申请人： Matthias Passlack ,  Jonathan K. Abrokwah ,  Karthik Rajagopalan ,  Haiping Zhou ,  Richard J. Hill ,  Xu Li ,  David A. Moran ,  Iain G. Thayne ,  Peter Zurcher

    发明人： Matthias Passlack ,  Jonathan K. Abrokwah ,  Karthik Rajagopalan ,  Haiping Zhou ,  Richard J. Hill ,  Xu Li ,  David A. Moran ,  Iain G. Thayne ,  Peter Zurcher

    IPC分类号： H01L21/334 ,  H01L29/20

    CPC分类号： H01L29/78 ,  H01L29/20 ,  H01L29/66462 ,  H01L29/7785

    摘要： A semiconductor fabrication process includes forming a gate dielectric layer (120) overlying a substrate (101) that includes a III-V semiconductor compound. The gate dielectric layer is patterned to produce a gate dielectric structure (121) that has a substantially vertical sidewall (127), e.g., a slope of approximately 45° to 90°. A metal contact structure (130) is formed overlying the wafer substrate. The contact structure is laterally displaced from the gate dielectric structure sufficiently to define a gap (133) between the two. The wafer (100) is heat treated, which causes migration of at least one of the metal elements to form an alloy region (137) in the underlying wafer substrate. The alloy region underlies the contact structure and extends across all or a portion of the wafer substrate underlying the gap. An insulative or dielectric capping layer (140,150) is then formed overlying the wafer and covering the portion of the substrate exposed by the gap.

    摘要翻译： 半导体制造工艺包括形成覆盖在包括III-V半导体化合物的衬底（101）上的栅极电介质层（120）。 栅极介电层被图案化以产生具有基本上垂直的侧壁（127）的栅极电介质结构（121），例如大约45°至90°的斜率。 金属接触结构（130）形成在晶片衬底上。 接触结构被充分地从栅极电介质结构侧向移位以限定两者之间的间隙（133）。 对晶片（100）进行热处理，这导致至少一种金属元素迁移，从而在下面的晶片衬底中形成合金区域（137）。 合金区域位于接触结构的下面，并且延伸穿过位于间隙下方的晶片衬底的全部或一部分。 然后形成绝缘或介电覆盖层（140,150），覆盖晶片并覆盖由间隙暴露的衬底的部分。

    METHOD AND APPARATUS FOR MEASURING BLOOD OXYGEN SATURATION
    43.
    发明申请
    METHOD AND APPARATUS FOR MEASURING BLOOD OXYGEN SATURATION 有权
    测量血氧饱和度的方法和装置

    公开(公告)号：US20090024012A1

    公开(公告)日：2009-01-22

    申请号：US11965634

    申请日：2007-12-27

    申请人： Xu Li ,  Xu Zhang

    发明人： Xu Li ,  Xu Zhang

    IPC分类号： A61B5/1455

    CPC分类号： A61B5/14551 ,  A61B5/7242

    摘要： A method and apparatus are disclosed for measuring blood oxygen saturation by using spectrophotometry to improve the accuracy of the measurement under a condition of low perfusion.

    摘要翻译： 公开了一种通过使用分光光度法在低灌注条件下提高测量精度来测量血氧饱和度的方法和装置。

    Catalysts for manufacturing carbon substances
    44.
    发明授权
    Catalysts for manufacturing carbon substances 失效
    用于制造碳物质的催化剂

    公开(公告)号：US07405178B2

    公开(公告)日：2008-07-29

    申请号：US10328105

    申请日：2002-12-23

    申请人： Xu Li ,  Youchang Wang ,  Takashi Okawa ,  Akio Harada ,  Yoshikazu Nakayama

    发明人： Xu Li ,  Youchang Wang ,  Takashi Okawa ,  Akio Harada ,  Yoshikazu Nakayama

    IPC分类号： B01J23/58

    CPC分类号： B82Y40/00 ,  B01J23/825 ,  B01J23/835 ,  B01J37/0219 ,  B01J37/082 ,  B82Y30/00 ,  C01B32/162 ,  C01B32/18 ,  C01B2202/36

    摘要： A catalyst for manufacturing carbon substances, such as carbon nanotube that has a diameter of 1000 nm or less, the catalyst containing at least iron, cobalt or nickel of a first element group and tin or indium of a second element group. The catalyst can be formed by at least tin and indium in addition to cobalt or nickel. The former catalyst provides a 2-component type catalyst and a multi-component type catalyst that is composed on the basis of the 2-component type catalyst, and the later catalyst provides a 3-component type catalyst and a multi-component type catalyst that is composed on the basis of the 3-component type catalyst.

    摘要翻译： 用于制造直径为1000nm以下的碳纳米管等碳材料的催化剂，所述催化剂至少含有第一元素基团的铁，钴或镍，以及第二元素基团的锡或铟。 除了钴或镍之外，催化剂可以至少由锡和铟形成。 前一种催化剂提供基于2-组分型催化剂组成的2-组分型催化剂和多组分型催化剂，后催化剂提供一种3-组分型催化剂和多组分型催化剂， 是基于3组分型催化剂组成的。

    Method and apparatus for eliminating interference in pulse oxygen measurement
    45.
    发明申请
    Method and apparatus for eliminating interference in pulse oxygen measurement 失效
    消除脉搏氧测量干扰的方法和装置

    公开(公告)号：US20070149872A1

    公开(公告)日：2007-06-28

    申请号：US11522396

    申请日：2006-09-18

    申请人： Xu Zhang ,  Xu Li ,  Shunan Li

    发明人： Xu Zhang ,  Xu Li ,  Shunan Li

    IPC分类号： A61B5/00

    CPC分类号： A61B5/14551 ,  A61B5/7239

    摘要： The present invention discloses a method and apparatus for eliminating interference in pulse oxygen measurement. The method comprises the steps of: collecting a first wavelength light and a second wavelength light transmitting through the object to be measured and converting collected optic signals into electric signals to form a plethysmogram; processing the plethysmogram so as to normalize it, in order to decompose the normalized plethysmogram into a combination of an ideal plethysmogram and noise, and expand the ideal plethysmogram by using functions that can make up a complete orthonormal system; eliminating the noise in the plethysmogram through differential operation; and restoring the plethysmogram free of noise through integral operation for calculating oxygen saturation. The apparatus comprises a collecting module, a processing module, a noise eliminating module, and a restoring module. The method and apparatus suitable for the measurement of oxygen saturation under weak perfusion and movement conditions.

    摘要翻译： 本发明公开了一种消除脉搏氧测量干扰的方法和装置。 该方法包括以下步骤：收集通过被测量物体透射的第一波长光和第二波长光，并将收集的光信号转换成电信号以形成体积图; 处理体积图以使其正常化，以将归一化的体积描记图分解为理想体积描记图和噪声的组合，并通过使用可构成完整的正交系统的功能来扩展理想的体积描记图; 通过差速操作消除体积描记中的噪音; 并通过用于计算氧饱和度的积分操作恢复无噪声的体积图。 该装置包括收集模块，处理模块，噪声消除模块和恢复模块。 适用于在弱灌注和运动条件下测量氧饱和度的方法和装置。

    Cleaning solutions for semiconductor substrates after polishing of copper film
    47.
    发明授权
    Cleaning solutions for semiconductor substrates after polishing of copper film 失效
    抛光铜膜后半导体衬底的清洗液

    公开(公告)号：US06593282B1

    公开(公告)日：2003-07-15

    申请号：US09037586

    申请日：1998-03-09

    申请人： Xu Li ,  Yuexing Zhao ,  Diane J. Hymes ,  John M. de Larios

    发明人： Xu Li ,  Yuexing Zhao ,  Diane J. Hymes ,  John M. de Larios

    IPC分类号： C11D1700

    CPC分类号： H01L21/02074 ,  C09K13/00 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

    摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

    摘要翻译： 描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。 本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。 这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

    Loop gain processing system for speakerphone applications
    48.
    发明授权
    Loop gain processing system for speakerphone applications 失效
    用于扬声器应用的环路增益处理系统

    公开(公告)号：US5612996A

    公开(公告)日：1997-03-18

    申请号：US531992

    申请日：1995-09-21

    申请人： Xu Li

    发明人： Xu Li

    IPC分类号： H04R3/02 ,  H04B3/20 ,  H04B3/23 ,  H04M1/60 ,  H04M9/08

    CPC分类号： H04M9/08

    摘要： A loop gain processing scheme for a speakerphone arrangement determines system loop gain according to two echo feedback paths within the speakerphone system. Gain values for each half-loop are calculated separately to ensure that both the local and far end telephone or speakerphone system are stable. A first half-loop includes gain contributions from a feedback path extending from a local speakerphone microphone to a hybrid line interface, which couples the speakerphone to the telephone network line, and subsequently to a local loudspeaker. A second half-loop defines a feedback path from a line receive channel to a transmit channel. Gain contributions are input into a system controller which determines gain values for each of the half-loops to accurately set the proper gain switching mode.

    摘要翻译： 用于扬声器装置的环路增益处理方案根据扬声器系统内的两个回波反馈路径确定系统环路增益。 单独计算每个半环的增益值，以确保本地和远端电话或免提电话系统都是稳定的。 第一半环包括从本地扬声器麦克风延伸到混合线路接口的反馈路径的增益贡献，混合线路接口将扬声器电话耦合到电话网络线路，然后连接到本地扬声器。 第二个半环定义了从线路接收信道到发射信道的反馈路径。 增益贡献被输入到系统控制器中，该系统控制器确定每个半环的增益值以准确地设定适当的增益切换模式。