-
公开(公告)号：US20120289413A1
公开(公告)日：2012-11-15
申请号：US13554900
申请日：2012-07-20
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
-
42.发明申请METHODS FOR OPERATING CHEMICALLY SENSITIVE SENSORS WITH SAMPLE AND HOLD CAPACITORS 有权用样品和保持电容器操作化学传感器的方法公开(公告)号：US20120288853A1
公开(公告)日：2012-11-15
申请号：US13554813
申请日：2012-07-20
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
-
公开(公告)号：US20120283146A1
公开(公告)日：2012-11-08
申请号：US13556005
申请日：2012-07-23
IPC分类号： C40B60/10
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
-
公开(公告)号：US20120280286A1
公开(公告)日：2012-11-08
申请号：US13556001
申请日：2012-07-23
IPC分类号： H01L27/088
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
-
公开(公告)号：US20120280285A1
公开(公告)日：2012-11-08
申请号：US13555992
申请日：2012-07-23
IPC分类号： H01L27/088
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
-
46.发明授权公开(公告)号：US07948015B2
公开(公告)日：2011-05-24
申请号：US12002291
申请日：2007-12-14
IPC分类号： G01N27/403
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
-
公开(公告)号：US09269708B2
公开(公告)日：2016-02-23
申请号：US13245675
申请日：2011-09-26
IPC分类号： G01N27/403 , H01L27/088 , C12Q1/68 , H01L29/78 , G01N27/414
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
-
公开(公告)号：US08821798B2
公开(公告)日：2014-09-02
申请号：US13354072
申请日：2012-01-19
申请人： James Bustillo , Todd Rearick , Wolfgang Hinz , Keith Fife
发明人： James Bustillo , Todd Rearick , Wolfgang Hinz , Keith Fife
IPC分类号： G01N27/00
CPC分类号： B01L3/5027 , B01L3/502707 , B01L2200/0668 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/0893 , G01N27/4145
摘要： A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.
摘要翻译： 本文公开了一种制造阵列结构中的微孔的方法。 阵列结构可以包括多个场效应晶体管（FET），其中每个FET具有栅极结构。 该方法可以包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛（TiN）层。 绝缘层也可以设置在阵列结构上，其中绝缘层位于TiN层之上。 此外，可以蚀刻在至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。 具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。
-
公开(公告)号：US08530941B2
公开(公告)日：2013-09-10
申请号：US13022678
申请日：2011-02-08
IPC分类号： G01N27/403
CPC分类号： G01N27/4148 , C12Q1/6818 , C12Q1/6874 , G01N27/4145 , G01N33/54373 , G01N33/5438 , H01L27/088 , H01L29/42324 , H01L29/78 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01073 , H01L2924/14 , H01L2924/1433 , Y10T436/22 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101
摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
-
公开(公告)号：US20130189790A1
公开(公告)日：2013-07-25
申请号：US13354088
申请日：2012-01-19
申请人： Shifeng LI , James Bustillo , Wolfgang Hinz
发明人： Shifeng LI , James Bustillo , Wolfgang Hinz
CPC分类号： G01N27/4148 , B01L3/5027 , B01L2200/0668 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0877 , B01L2300/0893 , G01N27/26 , G01N27/27 , G01N27/4145 , H01L21/302 , H01L21/31 , Y10T436/14 , Y10T436/142222 , Y10T436/143333
摘要： A system includes a sensor including a sensor pad and includes a well wall structure defining a well operatively connected to the sensor pad. The sensor pad is associated with a lower surface of the well. The well wall structure defines an upper surface and a wall surface extending between the upper surface and the lower surface. The upper surface is defined by an upper buffer material having an intrinsic buffer capacity of at least 2×1017 groups/m2. The wall surface is defined by a wall material having an intrinsic buffer capacity of not greater than 1.7×1017 groups/m2.
摘要翻译： 一种系统包括传感器，其包括传感器垫，并且包括限定可操作地连接到传感器垫的井的井壁结构。 传感器垫与井的下表面相关联。 井壁结构限定了上表面和在上表面和下表面之间延伸的壁表面。 上表面由具有至少2×1017组/ m2的本征缓冲能力的上缓冲材料限定。 壁表面由具有不大于1.7×1017组/ m2的本征缓冲能力的壁材料限定。
-
-
-
-
-
-
-
-
-
搜索结果
105 条记录 (耗时 0.05 秒)
