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136 条记录 (耗时 0.037 秒)

    Organic thin film transistor having surface-modified carbon nanotubes
    41.
    发明申请
    Organic thin film transistor having surface-modified carbon nanotubes 有权
    具有表面改性碳纳米管的有机薄膜晶体管

    公开(公告)号：US20090121216A9

    公开(公告)日：2009-05-14

    申请号：US11898977

    申请日：2007-09-18

    申请人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

    发明人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

    摘要： An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

    摘要翻译： 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

    Neutron Coincidence Counter for Non-Destructive Accounting for Nuclear Material and the Handling Thereof
    42.
    发明申请
    Neutron Coincidence Counter for Non-Destructive Accounting for Nuclear Material and the Handling Thereof 审中-公开
    核材料非破坏性核算中立一致计数器及其处理

    公开(公告)号：US20090001294A1

    公开(公告)日：2009-01-01

    申请号：US11722173

    申请日：2006-09-29

    申请人： Tae Hoon Lee ,  Ho Dong Kim ,  Won Il Ko ,  Dae Yong Song ,  Joong Hwan Jeong ,  Sang Yoon Lee

    发明人： Tae Hoon Lee ,  Ho Dong Kim ,  Won Il Ko ,  Dae Yong Song ,  Joong Hwan Jeong ,  Sang Yoon Lee

    IPC分类号： G21K1/00

    CPC分类号： G01T3/00 ,  G01T7/02

    摘要： A neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, and a basket horizontally movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein. Further, a neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, a basket movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein, and an external signal analyzer connected to the detectors through an electrically conductive path. Moreover, at least one facile connector of one-touch connection type is mounted on the electrically conductive path for connecting the detectors to the external signal analyzer, resulting in free removal and replacement of wires connected to the connector.

    摘要翻译： 根据本发明的用于核材料的非破坏性核算的中子重合计数器包括外壳，安装在外壳中并由主体包围的中子探测器和可在外壳中水平移动的篮状物 暴露在外壳外部并且具有用于在其中接收样品容器的空腔。 此外，根据本发明的用于核材料的非破坏性核算的中子重合计数器包括外壳，安装在外壳中同时被调节器包围的中子探测器，可在外壳中移动的篮状物 暴露在外壳外部并且具有用于在其中接收样品容器的空腔和通过导电路径连接到检测器的外部信号分析器。 此外，至少一个轻触式连接器的简单连接器安装在导电路径上，用于将检测器连接到外部信号分析仪，从而免除了去除和更换连接到连接器的电线。

    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
    47.
    发明授权
    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same 有权
    包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号：US07364940B2

    公开(公告)日：2008-04-29

    申请号：US11296704

    申请日：2005-12-08

    申请人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

    发明人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

    IPC分类号： H01L51/40

    CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

    摘要翻译： 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

    Organic electronic device
    50.
    发明申请
    Organic electronic device 有权
    有机电子设备

    公开(公告)号：US20070278481A1

    公开(公告)日：2007-12-06

    申请号：US11654585

    申请日：2007-01-18

    申请人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

    发明人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

    IPC分类号： H01L51/05 ,  H01L51/40

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

    摘要： Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

    摘要翻译： 公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻 在半导体层和源极/漏极之间。 用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。 因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。