摘要:
According to one embodiment, a magnetic recording head includes a main pole configured to apply a recording magnetic field perpendicular to a recording medium, a trailing-shield pole opposed to the main pole with a recording gap therebetween, a high-frequency oscillator between the main pole and the trailing-shield pole in the recording gap, configured to produce a high-frequency magnetic field, a magnetic seed layer between the main pole and the high-frequency oscillator and in contact with the main pole, and a highly oriented magnetic layer of a soft magnetic material superposed on the magnetic seed layer between the main pole and the high-frequency oscillator and in contact with the high-frequency oscillator.
摘要:
A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.
摘要:
A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.
摘要:
A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.
摘要:
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.