公开(公告)号：US07648671B2

公开(公告)日：2010-01-19

申请号：US10502038

申请日：2003-11-20

申请人： Shinichi Kai ,  Akira Kouchiyama ,  Katsuhisa Aratani ,  Kenzo Nakagawa ,  Yoshihiro Takemoto

发明人： Shinichi Kai ,  Akira Kouchiyama ,  Katsuhisa Aratani ,  Kenzo Nakagawa ,  Yoshihiro Takemoto

IPC分类号： H05B6/00

CPC分类号： G11B7/261 ,  G11B7/1267

摘要： The method of the present invention includes an exposing step in which a laser beam for recording modulated by an information signal corresponding to an information signal of an information concave and convex pattern formed on the optical disc is applied to an inorganic resist layer 101 formed on a substrate 100 to form an exposed pattern corresponding to the information concave and convex pattern on the optical disc, and a development step in which a concave and convex pattern corresponding to the information concave and convex pattern by the inorganic resist layer is formed. By applying a laser beam for estimation to a predetermined area on the inorganic resist layer in the exposing step to estimate recorded signal characteristics of the exposed pattern by the inorganic resist layer using reflected light of the laser beam for estimation, and controlling power of the laser beam for recording based on the estimated result, the aimed information recording on the optical disc can reliably be obtained.

摘要翻译： 本发明的方法包括曝光步骤，其中将用与在光盘上形成的信息凹凸图案的信息信号对应的信息信号进行记录的激光束施加到形成在光盘上的无机抗蚀剂层101上 基板100，以形成对应于光盘上的信息凹凸图案的曝光图案，以及形成与无机抗蚀剂层的信息凹凸图案相对应的凹凸图案的显影步骤。 通过在曝光步骤中将用于估计的激光束施加到无机抗蚀剂层上的预定区域，以使用用于估计的激光束的反射光通过无机抗蚀剂层估计曝光图案的记录信号特性，并且控制激光器的功率 基于估计结果记录的光束，可以可靠地获得在光盘上记录的目标信息。

公开(公告)号：US20080171290A1

公开(公告)日：2008-07-17

申请号：US12077119

申请日：2008-03-17

申请人： Akira Kouchiyama ,  Katsuhisa Aratani

发明人： Akira Kouchiyama ,  Katsuhisa Aratani

IPC分类号： G03F7/04 ,  G03F7/26

CPC分类号： B82Y10/00 ,  G03F7/0043 ,  G11B7/261

摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

公开(公告)号：US07175962B2

公开(公告)日：2007-02-13

申请号：US10474852

申请日：2003-02-20

申请人： Akira Kouchiyama ,  Katsuhisa Aratani

发明人： Akira Kouchiyama ,  Katsuhisa Aratani

IPC分类号： G03F7/004

CPC分类号： B82Y10/00 ,  G03F7/0043 ,  G11B7/261

摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

摘要翻译： 抗蚀剂材料和纳米制造方法提供高分辨率纳米制造，而不需要使用例如电子束或离子束的昂贵的照射装置。 也就是说，抗蚀剂材料和纳米制造方法使用目前使用的曝光设备提供更精细的处理。 不完全氧化的过渡金属如W和Mo的抗蚀剂层被选择性地暴露和显影以以预定形式图案化。 本文中不完全氧化的过渡金属是相对于过渡金属的可能化合价的化学计量氧含量略低于含量的氧含量的化合物。 换句话说，化合物的氧含量低于对应于过渡金属的可能化合价的化学计量的氧含量。

公开(公告)号：US20100112491A1

公开(公告)日：2010-05-06

申请号：US12635314

申请日：2009-12-10

申请人： Akira Kouchiyama ,  Katsuhisa Aratani

发明人： Akira Kouchiyama ,  Katsuhisa Aratani

IPC分类号： G03F7/20

CPC分类号： G11B7/261 ,  Y10S425/81 ,  Y10T428/24802

摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern using a light source with an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts; and developing the resist layer to form the predetermined irregular pattern.

摘要翻译： 一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。 制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层 或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 使用具有小于抗蚀剂开始曝光的照射阈值功率的照射功率的光源根据记录信号图案选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。

公开(公告)号：US20050097257A1

公开(公告)日：2005-05-05

申请号：US10851897

申请日：2004-05-21

申请人： Minoru Ishida ,  Katsuhisa Aratani ,  Akira Kouchiyama

发明人： Minoru Ishida ,  Katsuhisa Aratani ,  Akira Kouchiyama

IPC分类号： G11C13/00 ,  G11C7/00 ,  G11C11/409 ,  G11C13/02 ,  G11C16/02 ,  H01L27/10 ,  G06F12/00

CPC分类号： G11C13/0011 ,  G11C13/0064 ,  G11C13/0069 ,  G11C16/3459 ,  G11C2013/009

摘要： A storage device comprises a memory element and an applying means for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying means, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other. Thus, the storage device according to the present invention can satisfactorily carry out recording operations even when information is recorded continuously.

摘要翻译： 存储装置包括存储元件和用于向存储元件施加电压的施加装置，其中存储元件改变其特性以便通过施加装置向存储元件施加电压来记录信息，存储元件进一步改变其 当相同的信息被连续记录在存储元件上时的特性。 存储元件具有记录方法，其包括以下步骤：当记录信息时已经记录在存储元件上的信息的内容，将已经记录在存储元件上的信息与要记录在存储元件上的信息进行比较 存储元件，如果两个信息彼此不同，则向存储元件施加电压以进行普通信息记录处理，并且当两个信息彼此相同时禁用普通信息记录处理。 因此，即使当连续记录信息时，根据本发明的存储装置也能令人满意地执行记录操作。

公开(公告)号：US5978320A

公开(公告)日：1999-11-02

申请号：US76648

申请日：1998-05-12

申请人： Ariyoshi Nakaoki ,  Katsuhisa Aratani ,  Akira Kouchiyama

发明人： Ariyoshi Nakaoki ,  Katsuhisa Aratani ,  Akira Kouchiyama

IPC分类号： G11B11/105 ,  G11B11/00

CPC分类号： B82Y10/00 ,  G11B11/10534 ,  G11B11/10554 ,  G11B11/10543

摘要： A recording/reproducing apparatus for use with a photomagnetic recording medium. The apparatus comprises a magnetic coil and an optical system having a numerical aperture (NA) greater than 0.8 and arranged such that an optical axis thereof traverses the center of the magnetic coil. The photomagnetic recording medium has a magneto-optic recording film and a transparent protective layer having a thickness HCO formed sequentially on a substrate. The magnetic coil and the optical system are arranged on the transparent protective layer side of the photomagnetic recording medium when the photomagnetic recording medium is used with the apparatus and such that a combined distance equal to the thickness HCO and a distance d between a surface of the magnetic coil and an adjacent surface of the photomagnetic recording medium has a value of 0 .mu.m.ltoreq.d.ltoreq.145 .mu.m. The thickness HCO of the transparent protective layer may have a values of 0 .mu.m.ltoreq.HCO.ltoreq.100 .mu.m, and the distance d may have a value not larger than 45 .mu.m. Additionally, an innermost radius Ri of the magnetic coil may have a value of 290 .mu.m or less.

摘要翻译： 一种与光磁记录介质一起使用的记录/再现装置。 该装置包括磁性线圈和具有大于0.8的数值孔径（NA）的光学系统，并被布置为使得其光轴穿过磁性线圈的中心。 光磁记录介质具有磁光记录膜和在基板上依次形成厚度HCO的透明保护层。 当光磁记录介质与设备一起使用时，磁性线圈和光学系统被布置在光磁记录介质的透明保护层侧上，并且使得等于厚度HCO的组合距离和 磁性线圈和光磁记录介质的相邻表面具有0μm的值=145μm。 透明保护层的厚度HCO可以具有0μmHCO <100μm的值，并且距离d可以具有不大于45μm的值。 此外，磁线圈的最内半径Ri可以具有290μm或更小的值。

公开(公告)号：US09564583B2

公开(公告)日：2017-02-07

申请号：US10514009

申请日：2004-03-18

申请人： Katsuhisa Aratani ,  Akira Kouchiyama ,  Minoru Ishida

发明人： Katsuhisa Aratani ,  Akira Kouchiyama ,  Minoru Ishida

IPC分类号： H01L45/00

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

摘要： A memory element includes an amorphous thin-film that is between a first electrode and a second electrode in which at least one of the first electrode and the second electrode contains Ag or Cu. The amorphous thin film is a non-phase changing, amorphous material. A storage device includes a plurality of memory elements. Each memory element includes a wiring connected to a side of the first electrode and a wiring connected to a side of the second electrode.

摘要翻译： 存储元件包括在第一电极和第二电极之间的非晶薄膜，其中第一电极和第二电极中的至少一个包含Ag或Cu。 无定形薄膜是非相变非晶材料。 存储装置包括多个存储元件。 每个存储元件包括连接到第一电极侧的布线和连接到第二电极侧的布线。

公开(公告)号：US08222713B2

公开(公告)日：2012-07-17

申请号：US11565792

申请日：2006-12-01

申请人： Akira Kouchiyama ,  Katsuhisa Aratani

发明人： Akira Kouchiyama ,  Katsuhisa Aratani

IPC分类号： H01L23/52

CPC分类号： G11C13/0011 ,  G11C2213/11 ,  G11C2213/15 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/56 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： A storage element and storage apparatus are provided. A storage element includes a storage layer disposed between two electrodes, and an ion source layer provided in contact with the storage layer and containing any element selected from the group consisting of Cu, Ag, and Zn, wherein the material of the electrode on the storage layer side, of the two electrodes, is composed of an amorphous tungsten alloy containing at least one element selected from the group consisting of Zr, Nb, Mo, and Ta, or an amorphous tantalum nitride. The storage element is capable of stably performing an information recording operation.

摘要翻译： 提供存储元件和存储装置。 存储元件包括设置在两个电极之间的存储层和设置成与存储层接触并且包含选自Cu，Ag和Zn中的任何元素的离子源层，其中存储器中的电极的材料 这两个电极的层侧由包含选自Zr，Nb，Mo和Ta中的至少一种元素的无定形钨合金或非晶态氮化钽组成。 存储元件能够稳定地执行信息记录操作。

公开(公告)号：US07425724B2

公开(公告)日：2008-09-16

申请号：US11256920

申请日：2005-10-24

申请人： Katsuhisa Aratani ,  Minoru Ishida ,  Akira Kouchiyama

发明人： Katsuhisa Aratani ,  Minoru Ishida ,  Akira Kouchiyama

IPC分类号： H01L27/108

CPC分类号： H01L27/105 ,  H01L27/24 ,  H01L2924/0002 ,  Y10S257/906 ,  H01L2924/00

摘要： A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor portion) formed by a first minimum processing dimension is formed on a substrate, a memory portion (second semiconductor portion) formed by a second minimum processing dimension smaller than the first minimum processing dimension is stacked above it, and the memory portion (second semiconductor portion) is stacked with respect to the peripheral circuit portion (first semiconductor portion) with an alignment precision rougher than the second minimum processing dimension or wherein memory cells configured by 2-terminal devices are formed in regions where word lines and bit lines intersect in the memory portion, and contact portions connecting the word lines and bit lines and the peripheral circuit portions are arranged in at least two columns in directions in which the word lines and the bit lines extend.

摘要翻译： 一种能够在不需要高精度对准的情况下制造的存储器件，其制造方法以及以这种方式制造的存储器件的使用方法，其中，由第一最小值形成的外围电路部分（第一半导体部分） 在基板上形成加工尺寸，将由第二最小加工尺寸小的第二最小加工尺寸形成的存储部分（第二半导体部分）堆叠在其上方，并且存储部分（第二半导体部分）相对于 具有比第二最小处理尺寸更粗糙的对准精度的外围电路部分（第一半导体部分），或者其中由字线和位线在存储部分相交的区域中形成由2端子器件构成的存储单元， 字线和位线以及外围电路部分沿方向布置成至少两列 其中字线和位线延伸。

公开(公告)号：US20070139987A1

公开(公告)日：2007-06-21

申请号：US11565792

申请日：2006-12-01

申请人： Akira Kouchiyama ,  Katsuhisa Aratani

发明人： Akira Kouchiyama ,  Katsuhisa Aratani

IPC分类号： G11C19/08

CPC分类号： G11C13/0011 ,  G11C2213/11 ,  G11C2213/15 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/56 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： A storage element and storage apparatus are provided. A storage element includes a storage layer disposed between two electrodes, and an ion source layer provided in contact with the storage layer and containing any element selected from the group consisting of Cu, Ag, and Zn, wherein the material of the electrode on the storage layer side, of the two electrodes, is composed of an amorphous tungsten alloy containing at least one element selected from the group consisting of Zr, Nb, Mo, and Ta, or an amorphous tantalum nitride. The storage element is capable of stably performing an information recording operation.

摘要翻译： 提供存储元件和存储装置。 存储元件包括设置在两个电极之间的存储层和设置成与存储层接触并且包含选自Cu，Ag和Zn中的任何元素的离子源层，其中存储器中的电极的材料 这两个电极的层侧由包含选自Zr，Nb，Mo和Ta中的至少一种元素的无定形钨合金或非晶态氮化钽组成。 存储元件能够稳定地执行信息记录操作。