公开(公告)号：US5985035A

公开(公告)日：1999-11-16

申请号：US109033

申请日：1998-07-02

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  C23C16/00 ,  H05H1/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

摘要翻译： 在保持基板和基板保持系统的方法中，可以减少基板的背面上的异物的量，并且只有少量的异物从安装台传递到基板。 为此，基板保持系统具有环形防漏表面，在对应于基板的周边的样品台上提供平滑的支撑表面，多个接触保持部分抵靠在样品台上的基板上， 与基板周边相对应的位置和与基板中心相对应的位置，以及静电吸引装置，用于通过使基板的背面与环状的防漏表面接触而固定基板，以及接触保持部 。 将基板暴露于环状防漏表面处的冷却表面和位于环形防漏表面内的位置处的接触保持部。 基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

公开(公告)号：US5792304A

公开(公告)日：1998-08-11

申请号：US307238

申请日：1994-09-16

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  H05H1/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： In a method of a holding substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

摘要翻译： 在保持基板和基板保持系统的方法中，可以减少基板的背面上的异物量，并且只有少量的异物从安装台传递到基板。 为此，基板保持系统具有环形防漏表面，在对应于基板的周边的样品台上提供平滑的支撑表面，多个接触保持部分抵靠在样品台上的基板上， 与基板周边相对应的位置和与基板中心相对应的位置，以及静电吸引装置，用于通过使基板的背面与环状的防漏表面接触而固定基板，以及接触保持部 。 将基板暴露于环状防漏表面处的冷却表面和位于环形防漏表面内的位置处的接触保持部。 基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

公开(公告)号：US5673750A

公开(公告)日：1997-10-07

申请号：US460600

申请日：1995-06-02

申请人： Tsunehiko Tsubone ,  Naoyuki Tamura ,  Shigekazu Kato ,  Kouji Nishihata ,  Atsushi Itou

发明人： Tsunehiko Tsubone ,  Naoyuki Tamura ,  Shigekazu Kato ,  Kouji Nishihata ,  Atsushi Itou

IPC分类号： C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C30B33/00 ,  H01L21/00 ,  F28F27/00

CPC分类号： C23C16/466 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4583 ,  C23C16/4586 ,  C30B33/00 ,  H01L21/67103

摘要： This invention relates to a vacuum processing method and apparatus. When a sample is plasma processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. Before the step of holding the sample on the sample bed and supplying the heat transfer gas, heat transfer gas remaining upstream and downstream of the flow rate regulator in the supply line for the heat transfer gas is vacuum exhausted. This is accomplished using a bypass line connected upstream and downstream of the flow rate regulator and an arrangement of appropriate valves.

摘要翻译： 本发明涉及一种真空处理方法和装置。 当样品在减压下进行等离子体处理时，样品床被保持在比蚀刻温度低的预定温度的冷却介质冷却，样品被保持在样品床上，传热气体在 样品床的样品和样品安装表面以及传热气体的压力被控制以使样品达到预定的处理温度。 在将样品保持在样品床上并供给传热气体的步骤之前，用于传热气体的供给管线中的流量调节器的上游和下游的传热气体被真空排空。 这是使用连接在流量调节器的上游和下游的旁路管线和适当的阀的布置来实现的。

公开(公告)号：US4911812A

公开(公告)日：1990-03-27

申请号：US258468

申请日：1988-10-17

申请人： Katsuyoshi Kudo ,  Yoshinao Kawasaki ,  Minolu Soraoka ,  Tsunehiko Tsubone ,  Kazunori Tsujimoto ,  Shinichi Tachi ,  Saadyuki Okudaira

发明人： Katsuyoshi Kudo ,  Yoshinao Kawasaki ,  Minolu Soraoka ,  Tsunehiko Tsubone ,  Kazunori Tsujimoto ,  Shinichi Tachi ,  Saadyuki Okudaira

IPC分类号： H01L21/00 ,  H01L21/687

CPC分类号： H01L21/67109 ,  H01L21/68714

摘要： The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C. under reduced pressure, and maintaining at least an exposed surface to an atmosphere at which the specimen is treated except a specimen place surface of a specimen table on which the specimen is placed at a temperature above a dew point temperature of gases under the atmosphere; and a plasma treating apparatus comprises a treating chamber, means for reducing and exhausting the interior of the treating chamber, means for introducing a treating gas into the treating chamber, means for forming the treating gas into a plasma, a specimen table on which the specimen treated by utilizing the plasma is placed within the treating chamber, means for cooling the specimen table so as to be able to cool the specimen to a low temperature less than 0.degree. C., and means for maintaining at least an exposed surface within the treating chamber except a specimen place surface of the specimen table at a temperature above a dew point temperature of gases within said treating chamber, whereby even if the specimen table is cooled to a low temperature less than 0.degree. C., adsorption of the atmospheric gas to the exposed surface within the treating chamber which is at least a pressure-reduced atmosphere exposed surface except a specimen place surface of the specimen table is suppressed, and principally the occurrence of foreign matter can be prevented and the lowering of the yield of the specimen causes by the foreign matter can be prevented.

摘要翻译： 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括以下步骤：在减压下将处理气体形成到等离子体中，利用等离子体在减压下处理冷却至低于0℃的低温的样品，并将至少暴露的表面保持在 除了在大气下的气体的露点温度以上的温度下放置试样的试样台的试样的位置表面以外，对试样进行处理的气氛; 等离子体处理装置包括处理室，用于减少和排出处理室内部的装置，用于将处理气体引入处理室的装置，用于将处理气体形成为等离子体的装置，其上的样品 通过利用等离子体处理的处理室被放置在处理室内，用于冷却样品台的装置，以便能够将样品冷却至低于0℃的低温，以及用于在处理室内至少保持暴露表面的装置 除了所述处理室内的气体的露点温度以上的温度以外的试样台的试样位置表面，由此即使将试样台冷却至低于0℃的低温，也可以将气氛吸附至 处理室内的暴露表面被抑制为至少是除了样品台的试样位置表面之外的减压气氛暴露表面， 并且主要可以防止异物的发生，并且可以防止异物引起的试样的产量的降低。

公开(公告)号：US20090000741A1

公开(公告)日：2009-01-01

申请号：US12230465

申请日：2008-08-29

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Shigeru Shirayone ,  Hideki Kihara

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Shigeru Shirayone ,  Hideki Kihara

IPC分类号： C23F1/08

CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831

摘要： A vacuum processing apparatus includes a vacuum container which can be depressurized, a sample holder inside of the vacuum container for mounting a sample to be processed, wherein films laid over a surface of the sample are etched with plasma generated in a space above the sample holder. The apparatus further includes a gas supply channel for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, and a pressure control unit for changing stepwise the pressure of the gas supply channel between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of the sample by the etching.

摘要翻译： 真空处理装置包括可以减压的真空容器，用于安装待处理样品的真空容器内部的样品保持器，其中在样品保持器上方的空间中产生的等离子体蚀刻样品表面上的膜 。 该设备还包括用于在样品安装表面和样品的背面之间供给导热气体的气体供给通道，以及用于逐步改变样品安装表面和背面之间的气体供应通道的压力的压力控制单元 样品根据通过蚀刻处理样品膜的进度。

公开(公告)号：US07296783B2

公开(公告)日：2007-11-20

申请号：US11073652

申请日：2005-03-08

申请人： Hideki Kihara ,  Tsunehiko Tsubone ,  Nobuo Nagayasu

发明人： Hideki Kihara ,  Tsunehiko Tsubone ,  Nobuo Nagayasu

IPC分类号： F16K3/00

CPC分类号： F16K51/02 ,  F16K3/18

摘要： An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft. The rotating force is transmitted to a spot on the shaft between the pivot and the other end along the axis of the shaft.

摘要翻译： 提供廉价可靠的真空处理装置。 真空处理装置包括位于两个真空容器之间的密封门，用于允许它们彼此连通，并且经受处理的样品从一个真空容器传递到另一个; 以及闸阀，其位于门的路径上，闸阀包括分别面向第一和第二开口的第一和第二阀体以及阀体在其一端连接的轴，选择性地选择阀门 打开和关闭每个开口。 所述闸阀包括与所述轴的另一端连接的轴向驱动部，所述另一端用于沿所述轴的轴向移动所述轴;以及旋转驱动部，位于所述轴的一端与另一端之间，用于使所述轴绕预定 枢轴穿过轴的轴线。 旋转力沿着轴的轴线传递到枢轴和另一端之间的轴上的点。

公开(公告)号：USRE39756E1

公开(公告)日：2007-08-07

申请号：US10062087

申请日：2002-02-01

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

摘要翻译： 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

公开(公告)号：US20070035908A1

公开(公告)日：2007-02-15

申请号：US11214861

申请日：2005-08-31

申请人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Tsunehiko Tsubone

发明人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Tsunehiko Tsubone

IPC分类号： H01T23/00

CPC分类号： H01L21/6833

摘要： In the plasma processing apparatus including a processing chamber for plasma-processing a processed substrate, plasma generating unit that generates plasma in the processing chamber, and a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate, a current detector that detects a current value of leakage current flowing in a circuit formed of a power supply for electrostatic attraction, an electrostatic chuck, a substrate, plasma, a grounded line, and a controlling unit which sets an attraction condition to the current value and controls the applied voltage so that the leakage current reaches the set current value are included.

摘要翻译： 在包括处理基板等离子体处理用处理室的等离子体处理装置中，在处理室内产生等离子体的等离子体产生装置以及安装在处理室中并具有用于保持被处理基板的静电卡盘的晶圆台， 电流检测器，其检测在由静电吸引用电源形成的电路中流动的漏电流的电流值，静电卡盘，基板，等离子体，接地线以及将吸引条件设定为电流值的控制单元 并且控制施加的电压，使得漏电流达到设定电流值。

公开(公告)号：US20060291132A1

公开(公告)日：2006-12-28

申请号：US11370102

申请日：2006-03-08

申请人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Masakazu Isozaki ,  Toshio Masuda ,  Go Miya ,  Hiroho Kitada ,  Tooru Aramaki

发明人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Masakazu Isozaki ,  Toshio Masuda ,  Go Miya ,  Hiroho Kitada ,  Tooru Aramaki

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.

摘要翻译： 以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。 此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。 静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极 通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

公开(公告)号：US20060169939A1

公开(公告)日：2006-08-03

申请号：US11073652

申请日：2005-03-08

申请人： Hideki Kihara ,  Tsunehiko Tsubone ,  Nobuo Nagayasu

发明人： Hideki Kihara ,  Tsunehiko Tsubone ,  Nobuo Nagayasu

IPC分类号： F16K25/00

CPC分类号： F16K51/02 ,  F16K3/18

摘要： An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft. The rotating force is transmitted to a spot on the shaft between the pivot and the other end along the axis of the shaft.

摘要翻译： 提供廉价可靠的真空处理装置。 真空处理装置包括位于两个真空容器之间的密封门，用于允许它们彼此连通，并且经受处理的样品从一个真空容器传递到另一个; 以及闸阀，其位于门的路径上，闸阀包括分别面向第一和第二开口的第一和第二阀体以及阀体在其一端连接的轴，选择性地选择阀门 打开和关闭每个开口。 所述闸阀包括与所述轴的另一端连接的轴向驱动部，所述另一端用于沿所述轴的轴向移动所述轴;以及旋转驱动部，位于所述轴的一端与另一端之间，用于使所述轴绕预定 枢轴穿过轴的轴线。 旋转力沿着轴的轴线传递到枢轴和另一端之间的轴上的点。