Electrostatic chuck, wafer processing apparatus and plasma processing method
    1.
    发明申请
    Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
    静电卡盘,晶片加工装置和等离子体处理方法

    公开(公告)号:US20060291132A1

    公开(公告)日:2006-12-28

    申请号:US11370102

    申请日:2006-03-08

    IPC分类号: H01T23/00

    摘要: An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.

    摘要翻译: 以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。 此外,提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。 静电卡盘包括形成有多个冷却剂槽的基材,形成在基材上的高电阻层,通过热喷涂高电阻层内的导体形成的多个加热器,形成类似的多个静电卡盘电极 通过热电喷涂高电阻层内的导体和温度测量装置,并且基于温度测量装置的温度信息来调节加热器的输出。

    Apparatus and method for processing wafer
    2.
    发明申请
    Apparatus and method for processing wafer 审中-公开
    晶圆处理装置及方法

    公开(公告)号:US20060191482A1

    公开(公告)日:2006-08-31

    申请号:US11074717

    申请日:2005-03-09

    IPC分类号: C23C16/00

    摘要: A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.

    摘要翻译: 提供能够在晶片内获得均匀的CD分布的晶片处理装置。 晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路,用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置,用于调节加热器输入功率的装置和 控制电脑。 控制计算机接收由通过改变温度调节剂的温度,冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。 线宽尺寸用于计算和控制温度调节剂的温度,冷却气体压力和加热器的输入功率中的至少一个,以获得任意的蚀刻线宽度尺寸。

    Plasma processing apparatus and plasma processing method
    3.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US07147747B2

    公开(公告)日:2006-12-12

    申请号:US10377826

    申请日:2003-03-04

    IPC分类号: H01L21/00 C23C16/00

    摘要: A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.

    摘要翻译: 一种具有处理室的等离子体处理装置,其中待处理物体经受等离子体处理,其包括用于分光计单元的光接收部分,运算单元,数据库,确定单元和装置控制器。 确定单元确定处理室中达到调味品终点的状态。 执行条件的确定,使得发现通过多变量分析从一批等离子体发射数据得到的一个或多个输出信号与从前一批等离子体发射数据得到的一个或多个输出信号之间的一个或多个差异,平均值 确定一批中的差异值,确定一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差,并将该值与预设阈值进行比较。

    Plasma processing method
    4.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号:US07147748B2

    公开(公告)日:2006-12-12

    申请号:US10779742

    申请日:2004-02-18

    IPC分类号: H01L21/00 C23C16/00

    摘要: A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.

    摘要翻译: 一种使用等离子体处理装置的等离子体处理方法,该等离子体处理装置具有其中对基板进行等离子体处理的处理室,受光部,光谱仪单元,运算单元,数据库,确定单元,用于确定终点 调味料作为处理室的条件,以及设备控制器。 该方法包括以下步骤:将从光谱仪单元输出的多通道信号转换为一批输出信号,发现前一批次的输出信号和输出信号之间的差异,确定一批中的差异的平均值, 一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差,并将确定的值与预设阈值进行比较。

    Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
    9.
    发明授权
    Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
    监控和/或控制半导体制造装置的方法及其系统

    公开(公告)号:US07058470B2

    公开(公告)日:2006-06-06

    申请号:US10999006

    申请日:2004-11-30

    IPC分类号: G06F19/00

    摘要: A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.

    摘要翻译: 用于处理半导体晶片的半导体处理装置包括:用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值,以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括:处理结果预测单元,其基于模型方程和感测数据预测处理结果;以及处理配方控制单元,其将预测的处理结果与预先设定的值进行比较,以控制处理条件或输入参数。 处理配方控制单元包括控制器,用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。