公开(公告)号：US5504029A

公开(公告)日：1996-04-02

申请号：US254562

申请日：1994-06-06

申请人： Jun Murata ,  Yoshitaka Tadaki ,  Isamu Asano ,  Mitsuaki Horiuchi ,  Jun Sugiura ,  Hiroko Kaneko ,  Shinji Shimizu ,  Atsushi Hiraiwa ,  Hidetsugu Ogishi ,  Masakazu Sagawa ,  Masami Ozawa ,  Toshihiro Sekiguchi

发明人： Jun Murata ,  Yoshitaka Tadaki ,  Isamu Asano ,  Mitsuaki Horiuchi ,  Jun Sugiura ,  Hiroko Kaneko ,  Shinji Shimizu ,  Atsushi Hiraiwa ,  Hidetsugu Ogishi ,  Masakazu Sagawa ,  Masami Ozawa ,  Toshihiro Sekiguchi

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/105 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/105 ,  H01L27/10808

摘要： A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. The impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. The Y-select signal line overlaps the lower electrode layer of the capacitor element. A potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. The dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. The capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure. An aluminum wiring layer and a protective (and/or barrier) layer are formed by sputtering in the same vacuum sputtering chamber without breaking the vacuum between forming the layers; and a refractory metal, or a refractory metal silicide QSi.sub.x, where Q is a refractory metal and x is between 0 and 2, is used as a protective layer, for an aluminum wiring containing an added element (e.g., Cu) to prevent migration.

摘要翻译： 公开了一种具有开关MISFET的半导体集成电路器件和形成在半导体衬底上的电容器元件。 电容器元件连接的开关MISFET的半导体区域的杂质浓度小于外围电路的MISFET的半导体区域的杂质浓度。 Y选择信号线与电容器元件的下电极层重叠。 至少在与电容器元件连接的开关MISFET的半导体区域下方设置的势垒层通过用于沟道阻挡区域的杂质的扩散而形成。 电容器元件的电介质膜与其上的电容器电极层共同扩展。 电容器电介质膜是其上具有氧化硅层的氮化硅膜，氧化硅层通过在高压下氧化氮化硅的表面层而形成。 通过溅射在相同的真空溅射室中形成铝布线层和保护（和/或阻挡层），而不破坏形成层之间的真空; 和难熔金属或难熔金属硅化物QSix，其中Q是难熔金属，x在0和2之间，用作含有添加元素（例如Cu）以防止迁移的铝布线的保护层。

公开(公告)号：US5446689A

公开(公告)日：1995-08-29

申请号：US230814

申请日：1994-04-21

申请人： Tokumasa Yasui ,  Shinji Shimizu ,  Kotaro Nishimura

发明人： Tokumasa Yasui ,  Shinji Shimizu ,  Kotaro Nishimura

IPC分类号： G11C11/412 ,  G11C11/418 ,  H01L27/06 ,  H01L27/092 ,  H01L27/105 ,  H01L27/11 ,  H03K19/0185 ,  G11C11/417

CPC分类号： G11C11/412 ,  G11C11/418 ,  H01L27/0688 ,  H01L27/0927 ,  H01L27/1112 ,  H03K19/01855 ,  H01L27/105 ,  Y10S257/904

摘要： A semiconductor memory device is provided which has a plurality of memory cells each including a pair of cross-coupled metal insulated gate field effect transistors having channels of N-conductivity type, and a pair of load resistors of polycrystalline silicon respectively coupled to the pair of cross-coupled transistors. A peripheral circuit is also provided which is constituted by metal insulated gate field effect transistors having channels of the N-conductivity type and metal insulated gate field effect transistors having channels of P-conductivity type. The semiconductor memory device is formed in an N-type semiconductor substrate, and the pair of cross-coupled metal insulated gate field effect transistors of the memory cells are formed in a well region of P-type which forms a PN-junction with the semiconductor substrate to help reduce the susceptibility to soft errors.

摘要翻译： 提供了一种半导体存储器件，其具有多个存储单元，每个存储单元包括一对具有N-导电型通道的交叉耦合的金属绝缘栅场效应晶体管，以及分别耦合到所述一对的多晶硅的一对负载电阻器 交叉耦合晶体管。 还提供外围电路，其由具有N导电型通道的金属绝缘栅场效应晶体管和具有P导电型通道的金属绝缘栅场效应晶体管构成。 半导体存储器件形成在N型半导体衬底中，并且存储单元的一对交叉耦合金属绝缘栅场效应晶体管形成在与半导体形成PN结的P型阱区中 底物有助于降低软错误的易感性。

公开(公告)号：US4873559A

公开(公告)日：1989-10-10

申请号：US253779

申请日：1988-10-05

申请人： Shinji Shimizu ,  Osamu Tsuchiya ,  Katsuyuki Sato

发明人： Shinji Shimizu ,  Osamu Tsuchiya ,  Katsuyuki Sato

IPC分类号： G11C7/18 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  G11C7/18 ,  H01L27/10805 ,  H01L29/66181 ,  Y10S257/906

摘要： Dynamic RAM having memory cells, each of the memory cells having a capacitor with the electrode comprised of a first semiconductor region of a first type of conductivity formed in a substrate of second conductivity type. The first semiconductor region is formed by introducing impurities using a mask comprising (1) a nitride film which is deposited so as to define part of the shape of the capacitor. An oxide film, formed by thermal oxidation of the substrate, defines the shape of the memory cells, and each of the memory cells further have at least a second semiconductor region of a second type of conductivity formed between and under the electrodes, the shape thereof being defined by the nitride film and the oxide film that is formed by thermal oxidation.

摘要翻译： 具有存储单元的动态RAM，每个存储单元具有电容器，该电极由在第二导电类型的衬底中形成的第一类导电体的第一半导体区域构成。 通过使用掩模引入杂质来形成第一半导体区域，所述掩模包括（1）沉积以限定电容器的形状的一部分的氮化物膜。 通过衬底的热氧化形成的氧化膜限定了存储单元的形状，并且每个存储单元还具有形成在电极之间和之下的至少第二导电类型的第二半导体区域，其形状 由氮化物膜和通过热氧化形成的氧化物膜限定。

公开(公告)号：US08939818B2

公开(公告)日：2015-01-27

申请号：US13579527

申请日：2011-02-24

申请人： Shinji Shimizu ,  Atsushi Kazuno

发明人： Shinji Shimizu ,  Atsushi Kazuno

IPC分类号： C08G18/76 ,  B24B37/24 ,  C08G18/10 ,  C08G18/12 ,  C08G18/32 ,  C08G18/42 ,  C08G18/48 ,  C08G18/66 ,  C08G18/75 ,  C08G101/00 ,  H01L21/321

CPC分类号： B24B37/24 ,  C08G18/10 ,  C08G18/12 ,  C08G18/3206 ,  C08G18/4238 ,  C08G18/4854 ,  C08G18/6674 ,  C08G18/758 ,  C08G18/7621 ,  C08G2101/00 ,  H01L21/3212 ,  C08G18/3814

摘要： An object of the invention is to provide a polishing pad which has a polishing layer with a phase-separated structure and can provide high polishing rate and high planarization property and with which scratching can be suppressed. The polishing pad comprises the polishing layer. The polishing layer comprises a product of curing reaction of a polyurethane-forming raw material composition containing: (A) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (a) containing an isocyanate component and a polyester-based polyol; (B) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (b) containing an isocyanate component and a polyether-based polyol; and a chain extender, wherein the product of curing reaction has a phase-separated structure.

摘要翻译： 本发明的目的是提供一种具有相分离结构的抛光层并且可以提供高抛光速率和高平坦化性能并且可以抑制刮擦的抛光垫。 抛光垫包括抛光层。 抛光层包括聚氨酯形成原料组合物的固化反应产物，其含有：（A）通过含有异氰酸酯组分和聚酯基的预聚物形成原料组合物（a）反应获得的异氰酸酯封端的预聚物 多元醇 （B）通过含有异氰酸酯成分的预聚物形成用原料组合物（b）和聚醚类多元醇反应得到的异氰酸酯封端的预聚物; 和增链剂，其中固化反应的产物具有相分离的结构。

公开(公告)号：US08310617B2

公开(公告)日：2012-11-13

申请号：US12868009

申请日：2010-08-25

申请人： Shinji Shimizu

发明人： Shinji Shimizu

IPC分类号： G02F1/1333

CPC分类号： G02F1/133308 ,  G02F1/133608 ,  G02F2001/133317 ,  G02F2001/13332 ,  G02F2201/503

摘要： A liquid crystal display device includes: a liquid crystal display panel having a liquid crystal layer disposed between substrates facing each other; and a supporting frame holding the liquid crystal display panel and capable of being attached to backlight means, wherein an optical sheet disposed on the backlight means side of the liquid crystal display panel is provided, the supporting frame includes an upper frame, a mold frame, and a lower frame, the upper frame and the mold frame sandwiching the liquid crystal display panel therebetween, the mold frame and the lower frame sandwiching the optical sheet therebetween, and first fixing means (including a screw) for fixedly coupling the upper frame, the mold frame, and the lower frame with one another and second fixing means (including a screw) for fixedly coupling only the lower frame with the backlight means are separately disposed.

摘要翻译： 液晶显示装置包括：液晶显示面板，其具有设置在彼此面对的基板之间的液晶层; 以及支撑框架，其保持所述液晶显示面板并且能够安装在背光装置上，其中设置在所述液晶显示面板的背光装置侧的光学片，所述支撑框架包括上框架，模架， 和下框架，上框架和模框架夹在其间的液晶显示面板，模框和夹在其间的光学片的下框架，以及用于固定地联接上框架的第一固定装置（包括螺钉）， 模具框架和下框架，并且仅将下框架与背光装置固定地联接的第二固定装置（包括螺钉）被分开设置。

公开(公告)号：US20090075518A1

公开(公告)日：2009-03-19

申请号：US12230735

申请日：2008-09-04

申请人： Shinji Shimizu

发明人： Shinji Shimizu

IPC分类号： H01R13/648

CPC分类号： H01R31/065 ,  H01R13/6275

摘要： An electrical connector connects to a mating connector in a first direction. The electrical connector includes a housing, a plurality of terminals, a terminal arrangement board made of an electrical insulator for aligning and holding the terminals, and a metal plate attached to the housing at a position facing both surfaces of the terminal arrangement board for connecting to the mating connector. The metal plate has a lock portion at a position facing one surface of the terminal arrangement board. The lock portion engages a latch portion of the mating connector in the first direction when the electrical connector is connected to the mating connector. The metal plate has an elastic pressing portion at a position facing the other surface of the terminal arrangement board. The elastic pressing portion presses the mating connector in a second direction perpendicular to the first direction when the electrical connector is connected to the mating connector.

摘要翻译： 电连接器沿第一方向连接到配合连接器。 电连接器包括壳体，多个端子，用于对准和保持端子的电绝缘体制成的端子布置板，以及在面向端子布置板的两个表面的位置处附接到壳体的金属板，用于连接到 配对连接器。 金属板在与端子排列板的一个表面相对的位置处具有锁定部分。 当电连接器连接到配合连接器时，锁定部分在第一方向上接合配合连接器的闩锁部分。 金属板在面向端子排列板的另一个表面的位置处具有弹性按压部。 当电连接器连接到配合连接器时，弹性按压部分在垂直于第一方向的第二方向上按压配合连接器。

公开(公告)号：US07004792B2

公开(公告)日：2006-02-28

申请号：US10959337

申请日：2004-10-07

申请人： Shinji Shimizu

发明人： Shinji Shimizu

IPC分类号： H01R13/648

CPC分类号： H01R12/722

摘要： An electrical connector includes a plurality of terminals (1) having contact sections (4) extending in the plugging direction and arranged in the arranging sections at a predetermined intervals for contact with the contact sections (32A) of a mating connector (30). The arranging section is made in the inside surface of a single wall of the housing.

摘要翻译： 电连接器包括多个端子（1），其具有沿插入方向延伸的接触部分（4）并以预定间隔布置在布置部分中，以与配合连接器（30）的接触部分（32A）接触。 该布置部分在壳体的单个壁的内表面中制成。

公开(公告)号：US20060035526A1

公开(公告)日：2006-02-16

申请号：US11244202

申请日：2005-10-06

申请人： Shinji Shimizu

发明人： Shinji Shimizu

IPC分类号： H01R24/00

CPC分类号： H01R12/722

摘要： An electrical connector includes a plurality of terminals 1 having contact sections (4) extending in the plugging direction and arranged in the arranging sections at a predetermined intervals for contact with the contact sections (32A) of a mating connector (30). The arranging section is made in the inside surface of a single wall of the housing.

摘要翻译： 电连接器包括多个端子1，其具有沿插入方向延伸的接触部分（4），并以预定间隔布置在布置部分中，以与配合连接器（30）的接触部分（32A）接触。 该布置部分在壳体的单个壁的内表面中制成。

公开(公告)号：US06869301B2

公开(公告)日：2005-03-22

申请号：US10805258

申请日：2004-03-22

申请人： Shinji Shimizu ,  Masahiro Tanaka

发明人： Shinji Shimizu ,  Masahiro Tanaka

IPC分类号： H01R13/639 ,  H01R13/627 ,  H01R13/64 ,  H01R13/62

CPC分类号： H01R13/6276

摘要： An electrical connector (11) comprises an insulating housing (13), a plurality of contact elements (10) provided in a widthwise direction of the insulating housing, at least one guide portion 917) provided at a position where no contact element is present and guiding the connector to a position for plugging with a mating electrical connector (12), and a lock portion (18) provided at a top of the guide portion. The lock portion has a shape of a substantially sphere or a shape of a polyhedron having a top view of a substantially circle and locks a plugging condition between the electrical connectors.

摘要翻译： 电连接器（11）包括绝缘壳体（13），在绝缘壳体的宽度方向上设置的多个接触元件（10），设置在不存在接触元件的位置处的至少一个引导部分917） 将连接器引导到用于与配对电连接器（12）堵塞的位置，以及设置在引导部分顶部的锁定部分（18）。 锁定部分具有基本为球形或多面体形状的形状，其具有大致圆形的顶视图并锁定电连接器之间的堵塞状态。

公开(公告)号：US06509133B1

公开(公告)日：2003-01-21

申请号：US09537473

申请日：2000-03-24

申请人： Yasuyuki Watanabe ,  Naohito Saito ,  Nansei Tashiro ,  Katsuji Takahashi ,  Shinji Shimizu ,  Yasuhiko Kojima ,  Koji Oe

发明人： Yasuyuki Watanabe ,  Naohito Saito ,  Nansei Tashiro ,  Katsuji Takahashi ,  Shinji Shimizu ,  Yasuhiko Kojima ,  Koji Oe

IPC分类号： G03F7038

CPC分类号： B41C1/1025 ,  B41C2210/02 ,  B41C2210/04 ,  B41C2210/06 ,  B41C2210/24 ,  Y10S430/145 ,  Y10S430/146 ,  Y10S430/165

摘要： In order to provide a computer-to-plate (CTP) plate in which an image can be inscribed by a laser beam having Ithe maximum strength in a near infrared or infrared region, and heat processing is not necessary prior to developing a latent image, and which allows the use of a conventional printing apparatus as it is upon printing, (I) a lithographic printing plate is provided which has on a substrate, a photosensitive layer comprising a photosensitive composition containing a crosslinking agent, an aqueous dispersion of resin fine particles made of a resin which is self water-dispersible having a carboxylic group and a functional group capable of performing cross-linking reactions with the crosslinking agent, and an infrared absorption agent; and (II) an image forming method is provided which is characterized in that after an image has been formed on a photosensitive layer of the lithographic printing plate set forth in the above (I) by using a laser beam, the image is subjected to wet development.

摘要翻译： 为了提供一种计算机对板（CTP）板，其中图像可以由在近红外或红外区域具有最大强度的激光束内接，并且在显影潜像之前不需要热处理， 并且其允许在印刷时使用传统的印刷设备，（I）提供了在基板上具有包含含有交联剂的感光性组合物的感光层的光刻印刷板，树脂微粒的水分散体 由具有羧基的自水分散性树脂和能够与交联剂进行交联反应的官能团的树脂和红外线吸收剂组成; 和（II）提供了一种图像形成方法，其特征在于，在通过使用激光束在上述（I）中提出的平版印刷版的感光层上形成图像之后，图像被湿润 发展。