摘要:
There is disclosed a jig for producing a pellicle comprising a support frame having an opening, and an adhesive layer provided at periphery of the opening, wherein the adhesive layer is composed of a polymer material having a glass transition temperature within a range of 0° C. to 300° C. The jig of the present invention can be repeatedly used without reforming the adhesive layer after use.
摘要:
A pellicle for a mask or substrate including a frame having one end surface and another end surface and a membrane extended over the frame on the one end surface side. A channel is formed in the other end surface of the frame. The channel is filled with a layer of a tackifier capable of expanding upon heating and/or light irradiation such that the tackifier layer does not protrude outward beyond the other end surface of the frame in an unexpanded state, but protrudes outward beyond the other end surface of the frame when expanded. No liner is attached to the tackifier layer.
摘要:
Proposed is an improved frame-supported pellicle, which is an integral body consisting of a rigid frame, a transparent plastic resin film adhesively bonded to one end surface of the frame in a slack-free fashion and a layer of a pressure-sensitive adhesive on the other end surface of the frame. The improvement consists in the use of a specific pressure-sensitive adhesive capable of being imparted with a greatly decreased bonding strength when it is heated at a temperature higher than a critical temperature or irradiated with UV light in a dose exceeding a critical dose so as to facilitate demounting of the frame-supported pellicle from a photomask on which the pellicle is mounted when it is to be replaced with a new pellicle without leaving any fragments of the adhesive adherent to the photomask surface.
摘要:
High-packing silicon nitride powder having a tap density of at least about 0.9 g/cm.sup.3 is prepared by reacting a metallic silicon powder having a mean particle size of about 1 to 10 .mu.m, a BET specific surface area of about 1 to 5 m.sup.2 /g, and a purity of at least about 99% with nitrogen in a nitrogen atmosphere containing about 5 to 20% by volume of hydrogen at about 1,350 to 1,450.degree. C., and milling the resulting silicon nitride powder in a dry attritor. The powder is moldable into a compact having a density of at least about 1.70 g/cm.sup.3, from which a sintered part having improved dimensional precision and strength is obtained.
摘要翻译:具有至少约0.9g / cm 3的振实密度的高填充氮化硅粉末通过使平均粒度为约1-10μm的金属硅粉末,BET比表面积为约1-5m 2 g,纯氮至少约99%,氮气中含有约5至20体积%的氢气,约为1,350至1,450℃,并将得到的氮化硅粉末在干式磨碎机中研磨。 该粉末可模塑成密度为至少约1.70g / cm 3的压块,从而得到具有改善的尺寸精度和强度的烧结部件。
摘要:
An improvement is proposed in the method for the preparation of a frame-supported pellicle involving a step in which a resin film for the pellicle membrane formed on the surface of a substrate plate by the solution casting method is adhesively bonded to a rigid pellicle frame and then the substrate plate is removed by separating from the resin film by pulling the substrate and the frame apart in a gaseous atmosphere of which the relative humidity is 80% or higher in contrast to the conventional procedures in which this step is conducted either in water or in a gaseous atmosphere of an air-conditioned clean room having a relative humidity never exceeding 60%. By virtue of this unique procedure, an outstandingly small number of dust particles are deposited on the pellicle membrane obtained by the removal of the substrate therefrom along with an advantage of very smooth and easy removal of the substrate not to cause slack or rupture of the membrane.
摘要:
Disclosed is an X-ray transmitting frame-supported membrane of silicon nitride suitable as a mask blank of an X-ray lithographic mask having outstandingly high resistance against irradiation with high-energy radiations and high transmission of light of a wavelength of 633 nm. These very desirable properties are obtained as a consequence of the extremely low content, i.e. 1.0 atomic % or less, of hydrogen in the silicon nitride, which can be achieved as a result of the specific preparation procedure by the CVD method in which the reactant gases are silane or disilane and ammonia in a specified mixing ratio to be reacted under a specified pressure and at a specified temperature.
摘要:
A pellicle for dust-proofing of a photolithographic mask used for patterning in the manufacturing process of semiconductor devices. The drawback due to dust deposition can be greatly decreased in the use of a pellicle made from a fluorocarbon resin which is a copolymer of tetrafluoroethylene and another fluorocarbon monomer capable of introducing a cyclic perfluoroether group into the molecule when the pellicle film is rendered antistatically hydrophilic, for example, by a plasma treatment.
摘要:
Disclosed is an X-ray-permeable membrane for X-ray lithographic mask for fine patterning in the manufacture of semiconductor devices having good transparency to visible light and exhibiting excellent resistance against high-energy beam irradiation. The membrane has a chemical composition expressed by the formula SiC.sub.x N.sub.y and can be prepared by the thermal CVD method in an atmosphere of a gaseous mixture consisting of gases comprising, as a group, the elements of silicon, carbon and nitrogen such as a ternary combination of silane, propane and ammonia.
摘要翻译:公开了一种用于X射线光刻掩模的X射线透过膜,用于制造对可见光具有良好透明度并且显示出优异的高能束照射阻力的半导体器件的精细图案化。 膜具有由式SiC x N y表示的化学组成,并且可以在气体混合物气氛中通过热CVD法制备,所述气体混合物由以下组成的气体组成,所述气体包含硅,碳和氮的元素,例如三元组合 硅烷,丙烷和氨。
摘要:
An improvement is obtained in the stability and recording density of a magneto-optical recording medium having a laminar structure on a transparent substrate plate successively consisting of a first dielectric layer, a magnetic recording layer, a second dielectric layer and a metallic light-reflecting layer by forming the dielectric layer with a unique and specific dielectric material which is an amorphous composite material comprising boron and hydrogen in a specified weight proportion formed by the method of plasma CVD or sputtering. The dielectric material can be a ternary composite of boron, hydrogen and nitrogen or quaternary composite of boron, hydrogen, nitrogen and silicon or carbon.
摘要:
The inventive method provides a membrane for X-ray lithography compositely composed of silicon carbide and silicon nitride having high performance in respect of stability against high energy beam irradiation and transparency to visible light. The method comprises depositing a composite film of a specified SiC:Si.sub.3 N.sub.4 molar proportion by sputtering on a silicon wafer as the substrate under such conditions that the thus deposited film is under a compressively stressed state, annealing the substrate bearing the composite film deposited thereon at a specified temperature so as to bring the composite film under a tensile internal stress and then removing the substrate by etching leaving a frame portion.