公开(公告)号：US07095090B2

公开(公告)日：2006-08-22

申请号：US10821879

申请日：2004-04-12

申请人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

发明人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

IPC分类号： H01L31/0203

CPC分类号： H01L31/202 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.

摘要翻译： 采用薄膜形式并具有差的耐热性的基板的光电转换装置。 该装置防止通常由于对基板局部施加过多热量引起的热变形。 该装置具有允许从装置输出的输出端子被取出。 输出端子形成在与光电转换装置相对的基板的表面上。 该装置还包括用于将装置的电极与输出端子电连接的电连接器部分。 本发明还提供了一种以高通量用等离子体处理耐热性差的基板的方法。 将基板连续地供给到反应室中并用等离子体处理。 这种供给操作是这样进行的：存在于由电极形成的等离子体处理区域中的基板的总长度比电极的长度长。

公开(公告)号：US07087504B2

公开(公告)日：2006-08-08

申请号：US10133588

申请日：2002-04-29

申请人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

发明人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026 ,  H01L21/6708 ,  H01L21/67167 ,  H01L21/67213 ,  H01L29/66757 ,  H01L29/78675

摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

摘要翻译： 提供了一种用于制造其电特性几乎没有偏差的TFT的技术。 在除去形成在半导体膜表面上的自然氧化物膜之后，通过进行具有有机物去除效果的氧化处理，形成清洁的氧化物膜来减少半导体膜的污染。 通过使用在TFT的有源层中获得的半导体膜，可以获得其电特性几乎没有色散的TFT，并且可以提高电性能。 此外，通过使用本发明的半导体制造装置，可以将生产率和生产量的劣化降低到最小。

公开(公告)号：US20060163580A1

公开(公告)日：2006-07-27

申请号：US11388476

申请日：2002-04-08

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L29/04

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L29/4908

摘要： To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.

摘要翻译： 提供纯化有源层和绝缘膜之间的界面所需的技术。 在基板（101）上形成栅极布线（103），其表面被栅极氧化膜（104）覆盖。 然后，依次形成并层叠第一绝缘膜（105a），第二绝缘膜（105b），半导体膜（106）和保护膜（107），而不将其暴露在空气中。 此外，半导体膜（106）通过保护膜（107）照射激光。 以这种方式，通过完全净化半导体膜的界面，可以赋予TFT良好的特性。

公开(公告)号：US07060153B2

公开(公告)日：2006-06-13

申请号：US09760499

申请日：2001-01-11

申请人： Shunpei Yamazaki ,  Setsuo Nakajima

发明人： Shunpei Yamazaki ,  Setsuo Nakajima

IPC分类号： B32B38/10

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3283 ,  H01L51/0001 ,  H01L51/524 ,  H01L2227/326 ,  Y10S156/924 ,  Y10S438/977 ,  Y10T156/1189

摘要： To provide a technique for manufacturing a high-performance display device by employing a plastic substrate. A peeling layer is formed on an element-forming substrate, and a semiconductor element and a luminous element are further formed thereon. Then, a fixed substrate (130) is bonded on the luminous element by using a first adhesive (129). The entire substrate in this state is exposed in a gas containing halogen fluoride to thereby remove the peeling layer and separate the element-forming substrate. Thereafter, a bonding substrate (132) that comprises a plastic substrate is bonded in place of the separated element-forming substrate.

摘要翻译： 提供采用塑料基板制造高性能显示装置的技术。 在元件形成基板上形成剥离层，并且还在其上形成半导体元件和发光元件。 然后，使用第一粘合剂（129）将固定基板（130）接合在发光元件上。 在该状态下的整个基板在含有卤素氟化物的气体中露出，从而除去剥离层并分离元件形成基板。 此后，粘合包括塑料基板的接合基板（132）代替分离的元件形成基板。

公开(公告)号：US20060009015A1

公开(公告)日：2006-01-12

申请号：US11221773

申请日：2005-09-09

申请人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

发明人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026 ,  H01L21/6708 ,  H01L21/67167 ,  H01L21/67213 ,  H01L29/66757 ,  H01L29/78675

摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

公开(公告)号：US06893503B1

公开(公告)日：2005-05-17

申请号：US09050182

申请日：1998-03-26

申请人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

发明人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

IPC分类号： C30B25/04 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The method comprises the steps of: forming an amorphous semiconductor film containing silicon on a glass substrate to crystallize it by using a catalyst element; selectively introducing into the amorphous semiconductor film an impurity belonging to Group 15 to form gettering regions and regions to be gettered; and causing the catalyst element in the silicon film to move to the gettering regions by heat treatment. Through the gettering process, the crystalline silicon film can be obtained in which the concentration of nickel contained therein is sufficiently reduced.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件在保持低温工艺的优点的同时从含硅半导体膜中除去催化剂元件。 该方法包括以下步骤：在玻璃基板上形成含硅的非晶半导体膜，通过使用催化剂元素使其结晶化; 选择性地向非晶半导体膜引入属于第15族的杂质，以形成吸收区域和被吸收的区域; 并通过热处理使硅膜中的催化剂元素移动到吸气区域。 通过吸气工艺，可以获得其中含有的镍的浓度充分降低的结晶硅膜。

公开(公告)号：US20050070038A1

公开(公告)日：2005-03-31

申请号：US10968953

申请日：2004-10-21

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Setsuo Nakajima ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： G02F1/13 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  H01L21/00

CPC分类号： G02F1/13452 ,  G02F1/1303 ,  G02F1/133305 ,  G02F1/1345 ,  G02F1/13454 ,  H01L21/67132 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01079

摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.

摘要翻译： 一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。 驱动电路占用的空间比以前少。 使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。 电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。 随后，驱动电路的基板被去除。 这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多，因为导线不是以复杂的方式铺设。 驱动电路可以形成在诸如玻璃基板的大面积基板上。 显示装置可以形成在具有高抗冲击性的轻质材料上，例如塑料基板。 因此，可以获得具有优异便携性的显示装置。

公开(公告)号：US20050032339A1

公开(公告)日：2005-02-10

申请号：US10935307

申请日：2004-09-08

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Hisashi Ohtani ,  Satoshi Teramoto ,  Toshiji Hamatani

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Hisashi Ohtani ,  Satoshi Teramoto ,  Toshiji Hamatani

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/20 ,  H01L21/00 ,  H01L21/36

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1248 ,  Y10S438/928

摘要： There are provided a substrate of a semiconductor device and a fabrication method thereof which allow to suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It allows to suppress the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.

摘要翻译： 提供了一种半导体器件的衬底及其制造方法，其可以在TFT的制造步骤中抑制杂质从玻璃或石英衬底转向。 沉积绝缘膜，以便通过减压热CVD围绕玻璃基板。 这允许在稍后的工艺中抑制杂质从玻璃衬底渗透到TFT的有源区。

公开(公告)号：US20050012096A1

公开(公告)日：2005-01-20

申请号：US10917359

申请日：2004-08-13

申请人： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Setsuo Nakajima

发明人： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Setsuo Nakajima

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/14609 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers-on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give -the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.

摘要翻译： 公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。 在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。 接着，在铝图案103的表面上，层叠基板被加热，从而有意地形成小丘和晶须。接着，将作为阳极的铝图案103进行阳极氧化，在其上形成氧化膜105。 阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。 接下来，形成栅极绝缘膜106和非晶硅膜。 在图案上形成掩模，该掩模将产生栅电极，然后将乙酸镍溶液施加到层状结构。 因此，镍与结构的表面保持接触。 接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。 在如此制造的底栅型TFT中，有源层由结晶硅膜制成。 在该方法中，由于阳极氧化膜如图1所示那样形成。 如图1（C）所示，铝既不熔化，也不会流失。 因此，形成的铝电极的耐热性得到改善。

公开(公告)号：US06806495B1

公开(公告)日：2004-10-19

申请号：US09566730

申请日：2000-05-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Setsuo Nakajima

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Setsuo Nakajima

IPC分类号： H01L2904

CPC分类号： H01L27/1288 ,  G02F2001/136231 ,  H01L27/1214

摘要： A liquid crystal display device; in the prior art has been high in its manufactural cost for the reason that TFTs have been fabricated using, at least, five photo-masks.

摘要翻译： 液晶显示装置; 在现有技术中，由于至少使用了5个光掩膜来制造TFT，所以其制造成本很高。