公开(公告)号：US6165824A

公开(公告)日：2000-12-26

申请号：US34041

申请日：1998-03-03

申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

公开(公告)号：US06893503B1

公开(公告)日：2005-05-17

申请号：US09050182

申请日：1998-03-26

申请人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

发明人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

IPC分类号： C30B25/04 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The method comprises the steps of: forming an amorphous semiconductor film containing silicon on a glass substrate to crystallize it by using a catalyst element; selectively introducing into the amorphous semiconductor film an impurity belonging to Group 15 to form gettering regions and regions to be gettered; and causing the catalyst element in the silicon film to move to the gettering regions by heat treatment. Through the gettering process, the crystalline silicon film can be obtained in which the concentration of nickel contained therein is sufficiently reduced.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件在保持低温工艺的优点的同时从含硅半导体膜中除去催化剂元件。 该方法包括以下步骤：在玻璃基板上形成含硅的非晶半导体膜，通过使用催化剂元素使其结晶化; 选择性地向非晶半导体膜引入属于第15族的杂质，以形成吸收区域和被吸收的区域; 并通过热处理使硅膜中的催化剂元素移动到吸气区域。 通过吸气工艺，可以获得其中含有的镍的浓度充分降低的结晶硅膜。

公开(公告)号：US06479333B1

公开(公告)日：2002-11-12

申请号：US09532166

申请日：2000-03-21

申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

摘要翻译： 通过扩散金属元素进行晶体生长301，并且将镍元素移动到已掺杂磷的区域108和109中。 此时与镍元素的移动方向302,303一致的轴线与与晶体生长方向一致的轴线一致，制造具有作为沟道形成区域的区域的TFT。 在镍移动的区域的路径中，由于在移动方向上获得高结晶度，所以可以通过这种方式获得具有高特性的TFT。

公开(公告)号：US07485553B2

公开(公告)日：2009-02-03

申请号：US11580938

申请日：2006-10-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06544826B1

公开(公告)日：2003-04-08

申请号：US09717142

申请日：2000-11-22

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L29/78621

摘要： In producing TFT by crystallizing an amorphous silicon film by the action of nickel, the influence of nickel on the TFT produced is inhibited. A mask 104 is formed over an amorphous silicon film 102, and a nickel-containing solution is applied thereover. In that condition, nickel is kept in contact with the surface of the amorphous silicon film at the opening 103 of the mask. Then, this is heated to crystallize the amorphous silicon film. Next, a phosphorus-containing solution is applied thereto, so that phosphorus is introduced into the silicon film in the region of the opening 103. This is again heated, whereby nickel is gettered in the region into which phosphorus has been introduced. In this process, the nickel concentration in the silicon film is reduced.

摘要翻译： 在通过镍的作用使非晶硅膜结晶而制造TFT时，镍对所制造的TFT的影响被抑制。 在非晶硅膜102上形成掩模104，并且在其上施加含镍溶液。 在这种情况下，镍在掩模的开口103处与非晶硅膜的表面保持接触。 然后，将其加热以使非晶硅膜结晶。 接下来，向其中施加含磷溶液，使得在开口103的区域中将磷引入到硅膜中。这再次被加热，由此在被引入磷的区域中镍被吸收。 在此过程中，硅膜中的镍浓度降低。

公开(公告)号：US06448118B2

公开(公告)日：2002-09-10

申请号：US09749863

申请日：2000-12-26

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is performed to getter nickel existing in a region 113 to the regions 111 and 112. Then, the mask 109 is side-etched to obtain a pattern 115. Then, the regions 111 and 112 are removed by utilizing the pattern 115 and to pattern the region 113. Thus, a region 116 from which nickel element has been removed is obtained. The TFT is fabricated by using the region 116 as an active layer.

摘要翻译： 通过使用通过使用镍使非晶硅膜结晶而获得的晶体硅膜获得具有稳定特性的TFT。 通过使用掩模109将磷离子注入到区域111和112中。然后，进行热处理以将存在于区域113中的镍吸收到区域111和112.然后，对掩模109进行侧蚀刻以获得图案 然后，通过利用图案115去除区域111和112，并对区域113进行图案化。因此，获得了已经从中去除了镍元素的区域116。 通过使用区域116作为有源层来制造TFT。

公开(公告)号：US6156590A

公开(公告)日：2000-12-05

申请号：US98004

申请日：1998-06-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66765 ,  H01L29/78621

摘要： In producing TFT by crystallizing an amorphous silicon film by the action of nickel, the influence of nickel on the TFT produced is inhibited. A mask 104 is formed over an amorphous silicon film 102, and a nickel-containing solution is applied thereover. In that condition, nickel is kept in contact with the surface of the amorphous silicon film at the opening 103 of the mask. Then, this is heated to crystallize the amorphous silicon film. Next, a phosphorus-containing solution is applied thereto, so that phosphorus is introduced into the silicon film in the region of the opening 103. This is again heated, whereby nickel is gettered in the region into which phosphorus has been introduced. In this process, the nickel concentration in the silicon film is reduced.

公开(公告)号：US6133075A

公开(公告)日：2000-10-17

申请号：US65692

申请日：1998-04-24

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

IPC分类号： G02B5/30 ,  G02B27/00 ,  G02B27/01 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L21/00

CPC分类号： G02B27/017 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757 ,  G02B2027/0138 ,  G02B5/30 ,  G02F1/13454

摘要： There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

公开(公告)号：US07429751B2

公开(公告)日：2008-09-30

申请号：US11448041

申请日：2006-06-07

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideto Ohnuma

IPC分类号： H01L31/00

CPC分类号： H01L27/1259 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/127

摘要： There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.

摘要翻译： 提供一种通过使用离子掺杂装置精确地控制向半导体层的杂质离子的添加​​量，制造具有足够特性和很小波动的TFT的半导体器件的制造方法。 可以通过增加掺杂气体中的掺杂剂量和减少环境气氛成分（C，N，O）和同时加入杂质离子的氢来减少具有足够和稳定特性的TFT的半导体器件 兴奋剂的时候