公开(公告)号：US07679866B2

公开(公告)日：2010-03-16

申请号：US11944082

申请日：2007-11-21

申请人： Matthew Joseph Carey ,  Shekar Chandrashekariaih ,  Stefan Maat ,  Jeffrey Robinson Childress

发明人： Matthew Joseph Carey ,  Shekar Chandrashekariaih ,  Stefan Maat ,  Jeffrey Robinson Childress

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272

摘要： A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material (AFM layer) and is constructed so as to have a long spin diffusion length. The long spin diffusion length of the AP1 layer minimizes the negative GMR contribution of the AP1 layer, thereby increasing the overall GMR effect of the sensor.

摘要翻译： 一种具有固定层的磁阻传感器，其包括夹在AP1和AP2层之间的第一磁性层（AP1），第二磁性层（AP2）和反向平行耦合层。 AP1层与反铁磁材料层（AFM层）相邻，并被构造成具有长的自旋扩散长度。 AP1层的长自旋扩散长度使AP1层的负GMR贡献最小化，从而增加了传感器的总体GMR效应。

公开(公告)号：US07558028B2

公开(公告)日：2009-07-07

申请号：US11281054

申请日：2005-11-16

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3263 ,  H01L43/10

摘要： A magnetic head including a CPP GMR read sensor that includes a reference layer, a free magnetic layer and a spacer layer that is disposed between them, where the free magnetic layer and the reference magnetic layer are each comprised of Co2MnX where X is a material selected from the group consisting of Ge, Si, Al, Ga and Sn, and where the spacer layer is comprised of a material selected from the group consisting of Ni3Sn, Ni3Sb, Ni2LiGe, Ni2LiSi, Ni2CuSn, Ni2CuSb, Cu2NiSn, Cu2NiSb, Cu2LiGe and Ag2LiSn.Further embodiments include a dual spin valve sensor where the free magnetic layers and the reference layers are each comprised of Heusler alloys.A further illustrative embodiment includes a laminated magnetic layer structure where the magnetic layers are each comprised of a ferromagnetic Heusler alloy, and where the spacer layers are comprised of a nonmagnetic Heusler alloy.

摘要翻译： 包括CPP GMR读取传感器的磁头包括参考层，自由磁性层和间隔层，其中自由磁性层和参考磁性层各自包含Co2MnX，其中X是选择的材料 由Ge，Si，Al，Ga和Sn组成的组中，并且间隔层由选自Ni3Sn，Ni3Sb，Ni2LiGe，Ni2LiSi，Ni2CuSn，Ni2CuSb，Cu2NiSn，Cu2NiSb，Cu2LiGe和Ag2LiSn的材料构成。 。 另外的实施例包括双自旋阀传感器，其中自由磁性层和参考层各自由Heusler合金构成。 另外的说明性实施例包括层叠磁性层结构，其中磁性层各自包含铁磁Heusler合金，并且其中间隔层由非磁性Heusler合金构成。

公开(公告)号：US07551409B2

公开(公告)日：2009-06-23

申请号：US11560578

申请日：2006-11-16

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/39

CPC分类号： G11B5/1278

摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved free layer structure that includes a first ferromagnetic interface layer on the sensor's nonmagnetic spacer layer, a first electrically conductive interlayer on the first interface layer, a central ferromagnetic NiFe alloy free layer on the first interlayer, a second electrically conductive interlayer on the central free layer, and a second ferromagnetic interface layer on the second interlayer. The first ferromagnetic interface layer, central ferromagnetic free layer, and second ferromagnetic interface layer are ferromagnetically coupled together across the electrically conductive interlayers so their magnetization directions remain parallel. The free layer structure may be used in single or dual CPP sensors and in spin-valve or tunneling MR sensors.

摘要翻译： 电流 - 垂直于平面（CPP）磁阻（MR）传感器具有改进的自由层结构，其包括传感器的非磁性间隔层上的第一铁磁界面层，第一界面层上的第一导电中间层， 第一中间层上的中心铁磁NiFe合金自由层，中央自由层上的第二导电中间层和第二中间层上的第二铁磁界面层。 第一铁磁界面层，中心铁磁自由层和第二铁磁界面层通过导电中间层铁磁耦合在一起，使得它们的磁化方向保持平行。 自由层结构可用于单CPP或双CPP传感器和自旋阀或隧道式MR传感器。

公开(公告)号：US20090154025A1

公开(公告)日：2009-06-18

申请号：US11959102

申请日：2007-12-18

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat ,  Neil Smith

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat ,  Neil Smith

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.

摘要翻译： 具有双铁磁感测或由非磁性间隔层隔开的自由层的“扫描型”电流垂直平面（CPP）磁阻传感器具有改进的稳定性，这是由于每个中的蚀刻诱导的单轴磁各向异性 自由层。 两个铁磁自由层中的每一个具有蚀刻诱导的单轴磁各向异性和在静止状态下基本上平行于其单轴各向异性的面内磁矩，即不存在施加的磁场。 每个自由层的蚀刻诱导的单轴各向异性通过对每个自由层的直接离子蚀刻和/或通过其上沉积有每个自由层的层的离子蚀刻来实现。 通过蚀刻在自由层中诱发强烈的磁各向异性，这有利于静止状态下的两个自由层的大致正交取向。

公开(公告)号：US07529066B2

公开(公告)日：2009-05-05

申请号：US11304033

申请日：2005-12-14

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3163

摘要： A magnetoresistive sensor having a magnetic anisotropy induced in one or both of the free layer and/or pinned layer. The magnetic anisotropy is induced by a surface texture formed in the surface of the magnetic layer of either or both of the free layer or pinned layer. The surface texture is formed by a direct, angled ion mill performed on the surface of the magnetic layer while holding the wafer on a stationary chuck. By applying this ion milling technique, the magnetic anisotropy of the pinned layer can be formed in a first direction (eg. perpendicular to the ABS) while the magnetic anisotropy of the free layer can be formed perpendicular to that of the pinned layer (eg. parallel to the ABS).

摘要翻译： 具有在自由层和/或固定层中的一个或两个中诱发的磁各向异性的磁阻传感器。 磁各向异性由在自由层或被钉扎层中的任一个或两者的磁性层表面形成的表面纹理引起。 表面纹理由在磁性层的表面上执行的直接成角度的离子磨机形成，同时将晶片保持在固定的卡盘上。 通过应用这种离子铣削技术，可以沿着第一方向（例如垂直于ABS）形成钉扎层的磁各向异性，同时自由层的磁各向异性可以垂直于被钉扎层的形状形成（例如， 平行于ABS）。

公开(公告)号：US07525775B2

公开(公告)日：2009-04-28

申请号：US11283033

申请日：2005-11-17

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James Mac Freitag ,  Stefan Maat ,  Mustafa Michael Pinarbasi

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James Mac Freitag ,  Stefan Maat ,  Mustafa Michael Pinarbasi

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.

摘要翻译： 具有改善的钉扎场强的磁阻传感器。 传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。 通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。 底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。 磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。 本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。 然后将AFM层沉积在磁性层上。 然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。 这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

公开(公告)号：US07446986B2

公开(公告)日：2008-11-04

申请号：US10931677

申请日：2004-08-31

申请人： Satoru Araki ,  Jeffrey Robinson Childress ,  Stefan Maat ,  Daniele Mauri ,  Matthew Joseph Carey

发明人： Satoru Araki ,  Jeffrey Robinson Childress ,  Stefan Maat ,  Daniele Mauri ,  Matthew Joseph Carey

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.

摘要翻译： 具有堆叠偏压结构的磁阻传感器。 传感器包括偏置间隔件，其允许在与偏压层的磁矩正交的方向上偏置自由层磁矩。

公开(公告)号：US07372116B2

公开(公告)日：2008-05-13

申请号：US10869315

申请日：2004-06-16

申请人： Eric Edward Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

发明人： Eric Edward Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

IPC分类号： H01L29/82 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.

摘要翻译： 一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。

公开(公告)号：US20080074802A1

公开(公告)日：2008-03-27

申请号：US11525790

申请日：2006-09-21

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272

摘要： A current perpendicular to plane dual giant magnetoresistive sensor (dual CPP GMR sensor) that prevents spin torque noise while having high dR/R performance. The sensor has a design that maximizes the GMR effect (dR/R) by providing a pinned layer structure that maximizes the positive GMR contribution of the AP2 layer (or magnetic layer closest to the spacer layer) while minimizing the negative GMR contribution of the AP1 layer (or layer furthest from the spacer layer). The pinned layer structure includes an AP1 layer that includes a thin CoFe layer that is exchange coupled with an IrMn or IrMnCr AFM layer and has two or more Co layers with a spin blocking layer sandwiched between them. The use of the Co layers and the spin blocking layer in the AP1 layer minimizes the negative contribution of the AP1 layer. The AP2 layer has a plurality of CoFe layers with nano-layers such as Cu sandwiched between the CoFe layers. The nano-layers increase the already strong GMR effect provided by the CoFe layers, increasing the positive GMR effect from the AP2 layer.

摘要翻译： 垂直于平面双巨磁阻传感器（双CPP GMR传感器）的电流，可防止旋转扭矩噪声，同时具有高dR / R性能。 传感器具有通过提供使AP2层（或最靠近间隔层的磁性层）的正GMR贡献最大化的钉扎层结构来最大化GMR效应（dR / R）的设计，同时使AP1的负GMR贡献最小化 层（或距离间隔层最远的层）。 钉扎层结构包括AP1层，其包括与IrMn或IrMnCr AFM层交换耦合的薄CoFe层，并且具有夹在其间的自旋阻挡层的两个或更多个Co层。 在AP1层中使用Co层和自旋阻挡层使AP1层的负面贡献最小化。 AP2层具有夹在CoFe层之间的具有纳米层的多个CoFe层，例如Cu。 纳米层增加了由CoFe层提供的已经很强的GMR效应，增加了来自AP2层的正GMR效应。

公开(公告)号：US20070281079A1

公开(公告)日：2007-12-06

申请号：US11737701

申请日：2007-04-19

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  James Nix

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  James Nix

IPC分类号： B05D5/12

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12

摘要： A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.

摘要翻译： 具有由具有正磁致伸缩性的材料制成的磁稳定自由层的磁阻传感器，例如Co-Fe-B合金。 尽管自由层由具有正磁致伸缩的材料制成，这通常会使自由层不稳定，但是由于具有易磁化轴平行于空气的诱导磁各向异性，自由层的磁化保持稳定 （ABS）。 自由层的磁各向异性由自由层表面的各向异性纹理引发。 产生的各向异性表面纹理是通过离子研磨工艺产生的，该离子铣削工艺利用相对于晶片表面法线的锐角定向的离子束，其中制造传感器，同时将晶片保持在静止卡盘上。 这种成角度的静态离子铣削产生自由层的各向异性表面纹理或粗糙度，这导致上述磁各向异性，并且在所需方向上具有容易的磁化轴。