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41.发明申请公开(公告)号：US20160246018A1
公开(公告)日：2016-08-25
申请号：US15144611
申请日：2016-05-02
Applicant: Luxtera, Inc.
Inventor： Thierry Pinguet , Sherif Abdalla , Mark Peterson , Gianlorenzo Masini
CPC classification number: G02B6/428 , G02B6/12004 , G02B6/34 , G02B6/4295 , G02B2006/12107 , G02B2006/12123 , G02F1/2255 , G02F1/2257 , G02F2001/212 , H01L21/84 , H01L25/0652 , H01L27/0688 , H01L27/1203 , H01L2224/73265 , H01L2225/06541 , H04B10/27
Abstract: Methods and systems for hybrid integration of optical communication systems may comprise in an optical communication system comprising a silicon photonics die and one or more electronics die bonded to said silicon photonics die utilizing metal interconnects: receiving one or more continuous wave (CW) non-modulated optical signals in said silicon photonics die from an optical source external to said silicon photonics die; modulating said one or more received CW non-modulated optical signals in said silicon photonics die using electrical signals received from said one or more electronics die via said metal interconnects; receiving modulated optical signals in said silicon photonics die from one or more optical fibers coupled to said silicon photonics die; generating electrical signals in said silicon photonics die based on said received modulated optical signals; and communicating said generated electrical signals to at least one of said one or more electronics die via said metal interconnects.
Abstract translation: 用于光通信系统的混合集成的方法和系统可以包括在光通信系统中，所述光通信系统包括硅光子管芯和利用金属互连结合到所述硅光子管芯的一个或多个电子管芯：接收一个或多个连续波（CW） 所述硅光子学中的光信号从所述硅光子管芯外部的光源射出; 使用经由所述金属互连从所述一个或多个电子管芯接收的电信号来调制所述硅光子管芯中的所述一个或多个接收的CW未调制的光信号; 从耦合到所述硅光子管芯的一个或多个光纤接收所述硅光子管芯中的调制光信号; 基于所述接收的调制光信号在所述硅光子管芯中产生电信号; 以及经由所述金属互连将所述产生的电信号传送到所述一个或多个电子管芯中的至少一个。
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42.发明申请Method And System For Germanium-On-Silicon Photodetectors Without Germanium Layer Contacts 审中-公开不含锗层触点的锗硅光电探测器的方法和系统公开(公告)号：US20160155884A1
公开(公告)日：2016-06-02
申请号：US14926916
申请日：2015-10-29
Applicant: Luxtera, Inc.
Inventor： Kam-Yan Hon , Gianlorenzo Masini , Subal Sahni
IPC: H01L31/11 , H01L31/0352 , H01L31/028
Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.
Abstract translation: 公开了没有锗层接触的锗硅上光电探测器的方法和系统，并且可以包括在具有光电检测器的半导体管芯中，其中光电检测器包括n型硅层，锗层，p型硅层， 以及在n型硅层和p型硅层中的每一个上的金属接触：接收光信号，吸收锗层中的光信号，从吸收的光信号产生电信号，并传送电信号 通过n型硅层和p型硅层离开光电检测器。 光电检测器可以包括水平或垂直结双异质结构，其中锗层在n型和p型硅层之上。 本征掺杂的硅层可以在n型硅层和p型硅层之间的锗层的下方。 锗层的顶部可以是p掺杂的。
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43.发明申请公开(公告)号：US20140286647A1
公开(公告)日：2014-09-25
申请号：US14217743
申请日：2014-03-18
Applicant: Luxtera, Inc.
Inventor： Ali Ayazi , Kam-Yan Hon , Gianlorenzo Masini
CPC classification number: G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2001/212 , H04B10/501
Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.
Abstract translation: 用于低电压集成硅高速调制器的方法和系统可以包括包括第一和第二光波导和两个光学移相器的光调制器，其中两个光学移相器中的每一个可以包括具有水平截面的pn结和 垂直截面和光信号被传送到第一光波导。 然后光信号的一部分可以耦合到第二光波导。 可以使用光学移相器来调制波导中的至少一个光信号的相位。 相位调制光信号的一部分可以耦合在两个波导之间，由此产生来自调制器的两个输出信号。 调制信号可以被施加到可以包括反向偏置的移相器。
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公开(公告)号：US10578892B2
公开(公告)日：2020-03-03
申请号：US16267545
申请日：2019-02-05
Applicant: Luxtera, Inc.
Inventor： Ali Ayazi , Gianlorenzo Masini , Subal Sahni , Attila Mekis , Thierry Pinguet
Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.
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公开(公告)号：US10444593B2
公开(公告)日：2019-10-15
申请号：US15694236
申请日：2017-09-01
Applicant: Luxtera, Inc.
Inventor： Attila Mekis , Subal Sahni , Yannick De Koninck , Gianlorenzo Masini , Faezeh Gholami
Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
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Patent Agency Ranking
公开(公告)号：US10361790B2
公开(公告)日：2019-07-23
申请号：US16036447
申请日：2018-07-16
Applicant: Luxtera, Inc.
Inventor： Subal Sahni , Kam-Yan Hon , Attila Mekis , Gianlorenzo Masini , Lieven Verslegers
IPC: H04B10/548 , G02F1/025
Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.
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47.发明申请公开(公告)号：US20190181959A1
公开(公告)日：2019-06-13
申请号：US16268774
申请日：2019-02-06
Applicant: Luxtera, Inc.
Inventor： Gianlorenzo Masini , Subal Sahni
IPC: H04B10/60 , H01L31/028 , H01L31/0224 , G01J1/44 , H01L31/11 , H01L31/0368 , H03F3/08
CPC classification number: H04B10/60 , G01J1/44 , G01J2001/446 , H01L31/022408 , H01L31/028 , H01L31/03682 , H01L31/1105 , H03F3/08
Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.
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公开(公告)号：US20190113823A1
公开(公告)日：2019-04-18
申请号：US16206755
申请日：2018-11-30
Applicant: Luxtera, Inc.
Inventor： Attila Mekis , Subal Sahni , Yannick De Koninck , Gianlorenzo Masini , Faezeh Gholami
Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.
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公开(公告)号：US10236996B2
公开(公告)日：2019-03-19
申请号：US15950876
申请日：2018-04-11
Applicant: Luxtera, Inc.
Inventor： Peter De Dobbelaere , Attila Mekis , Gianlorenzo Masini
Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an integrated optical communication system including CMOS electronics die coupled to a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.
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公开(公告)号：US10209540B2
公开(公告)日：2019-02-19
申请号：US16036409
申请日：2018-07-16
Applicant: Luxtera, Inc.
Inventor： Ali Ayazi , Gianlorenzo Masini , Subal Sahni , Attila Mekis , Thierry Pinguet
Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.
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