公开(公告)号：US10707212B1

公开(公告)日：2020-07-07

申请号：US16235957

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US20200185406A1

公开(公告)日：2020-06-11

申请号：US16216088

申请日：2018-12-11

Applicant: Micron Technology, Inc.

Inventor： Haoyu Li ,  Everett A. McTeer ,  Christopher W. Petz ,  Yongjun J. Hu

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor device comprises a semiconductor material extending through a stack of alternating levels of a conductive material and an insulative material, and a material comprising cerium oxide and at least another oxide adjacent to the semiconductor material. Related electronic systems and methods are also disclosed.

公开(公告)号：US10510805B2

公开(公告)日：2019-12-17

申请号：US15439727

申请日：2017-02-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tsz Wah Chan ,  Yongjun J. Hu ,  Swapnil Lengade

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528 ,  H01L23/532

Abstract: The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.

公开(公告)号：US20140268991A1

公开(公告)日：2014-09-18

申请号：US13829754

申请日：2013-03-14

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yongjun J. Hu ,  Dale W. Collins ,  Everett A. McTeer

IPC: H01L45/00 ,  G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

Abstract: Embodiments disclosed herein may relate to a memory cell comprising a chalcogenide material mixture having a chalcogenide composition and a metallic glass-forming composition.

Abstract translation: 本文公开的实施方案可以涉及包含具有硫族化物组合物和金属玻璃形成组合物的硫属化物材料混合物的存储单元。