公开(公告)号：US5319657A

公开(公告)日：1994-06-07

申请号：US957786

申请日：1992-10-08

申请人： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/305 ,  H01S5/34 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313

摘要： The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.

摘要翻译： 半导体激光器包括Sn掺杂的InP衬底1，n-InGaAsP波导层2，5nm厚的InGaAs阱层3,3.5nm厚的未掺杂InGaAsP层4,3nm厚的p-InGaAsP调制掺杂层5，3.5nm厚的未掺杂 InGaAsP层6，具有10个阱的调制掺杂量子阱层7，90nm厚的p-InGaAsP层8，p-InP包覆层9（Zn = 7×10 17 cm -3），pnp电流阻挡层10和台面 形Au / Sn电极12，如果通过气相沉积形成Au / Zn p电极13以完成激光结构。

公开(公告)号：US5229314A

公开(公告)日：1993-07-20

申请号：US925153

申请日：1992-08-06

申请人： Tomonori Okudaira ,  Hideaki Arima ,  Makoto Ohi ,  Kaoru Motonami ,  Yasushi Matsui

发明人： Tomonori Okudaira ,  Hideaki Arima ,  Makoto Ohi ,  Kaoru Motonami ,  Yasushi Matsui

IPC分类号： H01L27/108 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L29/41775 ,  H01L27/10817 ,  H01L29/7831

摘要： A field effect transistor and a method of manufacturing thereof are disclosed that is not reduced in the characteristic of withstanding voltage between multilayer interconnection layers even when scaled to a higher integration. This field effect transistor includes side walls 21a formed on both sides of a bit line 15 so that the bottom side end contacts the upper surface of side walls 20a of gate electrodes 4b and 4c. The thickness of an insulating film interposed between gate electrodes 4b and 4c and a base portion 11a forming a low electrode 11 of a capacitor is not reduced. The characteristic of withstanding voltage is not deteriorated between multilayer interconnection layers even when scaled to higher integration.

摘要翻译： 公开了一种场效应晶体管及其制造方法，即使在缩小到更高的集成度时，也不会降低多层互连层之间的耐电压特性。 该场效应晶体管包括形成在位线15两侧的侧壁21a，使得底侧端接触栅电极4b和4c的侧壁20a的上表面。 插入在栅电极4b和4c之间的绝缘膜的厚度和形成电容器的低电极11的基部11a的厚度不降低。 即使缩放到更高的集成度，耐压电压的特性也不会在多层互连层之间劣化。

公开(公告)号：US5173752A

公开(公告)日：1992-12-22

申请号：US690824

申请日：1991-04-26

申请人： Kaoru Motonami ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yoshinori Okumura ,  Yasushi Matsui

发明人： Kaoru Motonami ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yoshinori Okumura ,  Yasushi Matsui

IPC分类号： H01L27/10 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L23/522 ,  H01L27/108 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L27/10873 ,  H01L23/485 ,  H01L27/10817 ,  H01L2924/0002 ,  Y10S257/90

摘要： A semiconductor device incloudes a MOS type field effect transistor whose gate electrode (4) has its surface covered with a first insulating film (5) and left and right sides provided with a pair of second insulating films (10). A first conductive layer (12, 13) is formed on the surface of the source/drain region (8, 11) and the surface of one of a pair of second insulating films (10) which are positioned on one side of the gate electrode (4). A third insulating film (24b) is formed at least on the surface of the second insulating film (10) on which the first conductive layer (12, 13) is not formed. A second conductive layer (18) is provided on the surface of the third insulating film (24b) and on the source/drain region (8, 11) on which the third insulating film (24b) is formed. This structure enables provision of a semiconductor device in which a contact hole can be formed in self-alignment, independent from the influence of errors in the step of patterning a resist mask.

摘要翻译： 半导体器件包括MOS型场效应晶体管，其栅电极（4）的表面被第一绝缘膜（5）覆盖，左侧和右侧设置有一对第二绝缘膜（10）。 第一导电层（12,13）形成在源/漏区（8,11）的表面上，并且一对第二绝缘膜（10）中的一个位于栅电极的一侧的表面 （4）。 至少在没有形成第一导电层（12,13）的第二绝缘膜（10）的表面上形成第三绝缘膜（24b）。 在第三绝缘膜（24b）的表面和形成有第三绝缘膜（24b）的源/漏区（8,11）上设置第二导电层（18）。 该结构能够提供可以独立于图案化抗蚀剂掩模的步骤中的误差的影响的自对准中形成接触孔的半导体器件。

公开(公告)号：US4748017A

公开(公告)日：1988-05-31

申请号：US4942

申请日：1987-01-20

申请人： Yasushi Matsui ,  Toshinori Kamisaka ,  Takahiko Goto ,  Kenichi Okazaki ,  Norio Koike

发明人： Yasushi Matsui ,  Toshinori Kamisaka ,  Takahiko Goto ,  Kenichi Okazaki ,  Norio Koike

IPC分类号： H01F1/032 ,  C01G49/02 ,  C01G49/06 ,  G11B5/706 ,  H01F1/11

CPC分类号： G11B5/70642 ,  C01G49/06 ,  C01P2006/12 ,  C01P2006/42

摘要： Lepidocrocite suitable for obtaining excellent magnetic powders and magnetic recording media is manufactured by oxidizing an aqueous suspension of ferrous hydroxide obtained from a ferrous salt and an alkali by blowing an amount of an oxygen-containing gas into the suspension, in which the blowing amount of the oxygen-containing gas is appropriately controlled in three steps, according to three steps of the oxidation reaction of the ferrous hydroxide. In a preferred embodiment, average oxygen absorption rates in the three oxidization steps are defined and the blowing of the oxygen-containing gas is controlled thereby.

摘要翻译： 适用于获得优异的磁粉和磁记录介质的扁平球墨水是通过将由亚铁盐和碱获得的氢氧化亚铁的水悬浮液通过向悬浮液中吹入一定量的含氧气体而制成的，其中， 根据氢氧化亚铁的氧化反应的三个步骤，三个步骤适当地控制含氧气体。 在优选的实施方案中，限定了三个氧化步骤中的平均氧吸收速率，并且由此控制含氧气体的吹送。

公开(公告)号：US4729846A

公开(公告)日：1988-03-08

申请号：US4943

申请日：1987-01-20

申请人： Yasushi Matsui ,  Norio Koike ,  Kunio Takahashi ,  Hiroshi Matsue

发明人： Yasushi Matsui ,  Norio Koike ,  Kunio Takahashi ,  Hiroshi Matsue

IPC分类号： H01F1/11 ,  C01G49/02 ,  C01G49/06

CPC分类号： C01G49/06 ,  C01P2004/52 ,  C01P2006/42

摘要： Lepidocrocite (.gamma.-FeOOH) with an large specific surface area and a uniform particle size is provided by a method comprising preparing a suspension of ferrous hydroxide at a pH of 6.5 to 7.5 by adding a ferrous salt solution with an alkali solution in an amount of 0.4 to 0.7 times the theoretical amount for converting all the ferrous salt to ferrous hydroxide, blowing an oxygen-containing gas into the suspension to form a seed crystal of .gamma.-FeOOH, completing the generation reaction of .gamma.-FeOOH by blowing an oxygen-containing gas into the suspension while adding an alkali solution to keep the pH of the suspension within a range of 3 to 5, in which an Si concentration of the suspensions for seed reaction and for generation reaction of .gamma.-FeOOH is controlled to be within 5 to 30 ppm.

摘要翻译： 通过以下方法提供具有大的比表面积和均匀粒径的鳞状赤铁矿（γ-FeOOH），该方法包括通过将亚铁盐溶液与碱溶液一起加入至pH 6.5至7.5的方法制备氢氧化亚铁悬浮液 将所有亚铁盐转化为氢氧化亚铁的理论量的0.4〜0.7倍，向混悬液中吹入含氧气体，形成γ-FeOOH晶种，通过吹入含氧气体完成γ-FeOOH的发生反应 将气体加入到悬浮液中，同时加入碱溶液以将悬浮液的pH保持在3至5的范围内，其中用于种子反应的悬浮液和γ-FeOOH的发生反应的Si浓度被控制在5〜 30 ppm。