公开(公告)号：US20080012088A1

公开(公告)日：2008-01-17

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/103

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 其中p型+外延层和n型外延层已经沉积在p < SUP + +型衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从P型半导体区域到达p型半导体区域 基材表面。 在芯片切割部分也形成了p型半导体区域，用于将基板分离为各个器件，从而从衬底表面到达p +型外延层。

公开(公告)号：US20070262240A1

公开(公告)日：2007-11-15

申请号：US11826926

申请日：2007-07-19

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。

公开(公告)号：US07262396B2

公开(公告)日：2007-08-28

申请号：US10287707

申请日：2002-11-05

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

IPC分类号： H01L21/00 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

公开(公告)号：US20060082669A1

公开(公告)日：2006-04-20

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US06570222B2

公开(公告)日：2003-05-27

申请号：US09801919

申请日：2001-03-09

申请人： Hidetoshi Nozaki ,  Ikuko Inoue ,  Hirofumi Yamashita

发明人： Hidetoshi Nozaki ,  Ikuko Inoue ,  Hirofumi Yamashita

IPC分类号： H01L2701

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14654

摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域上选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。

公开(公告)号：US06403998B1

公开(公告)日：2002-06-11

申请号：US09435464

申请日：1999-11-08

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14689

摘要： In a MOS type solid-state image sensor having an image pickup area formed at a semiconductor substrate and comprising a two-dimensional array of row and column unit cells including a photoelectric conversion section and signal scanning circuit, a first p well area is provided in a surface portion of an n type silicon substrate and a second p well area is selectively provided in the surface portion of the first p well area and is higher in p type impurity concentration than the first p well area. In the image pickup area, the photoelectric conversion section is formed in the first p well area and the signal scanning circuit section is formed in the second p well area.

摘要翻译： 在具有在半导体基板上形成的摄像区域的MOS型固态图像传感器中，包括具有光电转换部分和信号扫描电路的行和列单元的二维阵列，第一p阱区域设置在 n型硅衬底的表面部分和第二p阱区域选择性地设置在第一p阱区域的表面部分中，并且p型杂质浓度高于第一p阱区域。 在图像拾取区域中，光电转换部分形成在第一p阱区域中，并且信号扫描电路部分形成在第二p阱区域中。

公开(公告)号：US06194244B1

公开(公告)日：2001-02-27

申请号：US09109061

申请日：1998-07-02

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

IPC分类号： H01L2100

CPC分类号： H01L27/14601 ,  H01L27/14689

摘要： The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分，其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线，其中各个光电转换部分通过至少两次离子注入形成。

公开(公告)号：US6072206A

公开(公告)日：2000-06-06

申请号：US272339

申请日：1999-03-19

申请人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

发明人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

摘要： The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.

摘要翻译： 本发明提供了一种固态图像传感器，其构造方式是，即使晶体管的阱的杂质浓度增加，结漏电流也不增加，因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外，作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。

公开(公告)号：US5063449A

公开(公告)日：1991-11-05

申请号：US437260

申请日：1989-11-16

申请人： Hidenori Shibata ,  Ikuko Inoue ,  Nozomu Harada

发明人： Hidenori Shibata ,  Ikuko Inoue ,  Nozomu Harada

IPC分类号： H01L27/148

CPC分类号： H01L27/14831

摘要： A solid-state image sensor comprises signal charge storage diodes formed in a semiconductor substrate, a plurality of signal charge read-out sections formed adjacent to the signal charge storage diodes on the semiconductor substrate, a plurality of signal charge transfer sections formed close to the signal charge read-out sections on the semiconductor substrate, pixel electrodes electrically coupled to the signal charge storage diodes, and a plurality of bias-charge injecting gates and bias-charge injecting diodes, which are provided adjacent to the signal charge transfer sections to inject bias charges into the signal charge storage diodes via the signal charge read-out sections.

摘要翻译： 固态图像传感器包括形成在半导体衬底中的信号电荷存储二极管，与半导体衬底上的信号电荷存储二极管相邻形成的多个信号电荷读出部分，多个信号电荷转移部分， 半导体衬底上的信号电荷读出部分，电耦合到信号电荷存储二极管的像素电极以及多个偏置电荷注入栅极和偏置电荷注入二极管，这些偏置电荷注入栅极和偏置电荷注入二极管邻近于信号电荷转移部分而被注入 通过信号电荷读出部分对信号电荷存储二极管进行偏置电荷。