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    TUNNELING MAGNETIC SENSING ELEMENT
    44.
    发明申请
    TUNNELING MAGNETIC SENSING ELEMENT 有权
    隧道式感应元件

    公开(公告)号：US20100055501A1

    公开(公告)日：2010-03-04

    申请号：US12617199

    申请日：2009-11-12

    申请人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

    发明人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1114

    摘要： A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

    摘要翻译： 隧道磁传感元件包括层叠体，其中具有磁化方向钉扎的钉扎磁性层，绝缘阻挡层和具有可变形外部磁场的磁化方向的自由磁性层从下面依次层叠。 绝缘阻挡层由Mg-O制成。 自由磁性层具有软磁性层和设置在软磁性层与绝缘阻挡层之间的增强层，其自旋极化比高于软磁性层。 将由Co-Fe-B，Co-B，Fe-B和Co-Fe中的一种制成的插入磁性层沿与构成层叠体的各层的界面平行的方向插入到软磁性层中， 软磁性层通过插入磁性层在厚度方向上被分成多层。

    Magnetic detection head and method for manufacturing the same
    47.
    发明授权
    Magnetic detection head and method for manufacturing the same 有权
    磁性检测头及其制造方法

    公开(公告)号：US07738218B2

    公开(公告)日：2010-06-15

    申请号：US11436270

    申请日：2006-05-17

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3906 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3263 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10

    摘要： A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

    摘要翻译： 提供了能够通过改善自由磁性层的材料而将高分辨率RA维持并减小磁致伸缩的磁性检测元件及其制造方法。 自由磁性层包括由由组成式CoaMnbXc表示的金属化合物形成的CoMnX合金层（其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中至少一种）和a + b + c = 100原子％）和由组成式CodMneZf（Z表示Sn和Al中的至少一种，d + e + f = 100原子％）表示的金属化合物形成的CoMnZ合金层。 以这种方式，可以减小自由磁性层的磁致伸缩。

    Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer
    49.
    发明申请
    Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer 有权
    包含构成自由磁性层或固定磁性层的四元Heusler合金Co2Mn（Ge1-xSnx）的磁感测元件

    公开(公告)号：US20060215330A1

    公开(公告)日：2006-09-28

    申请号：US11386206

    申请日：2006-03-22

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2≦x≦0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.

    摘要翻译： 描述了一种磁感测元件，其包括多层膜，其包括被钉扎的磁性层，在其上具有非磁性层的被钉扎的磁性层上设置的自由磁性层，其中电流垂直于多层膜的各个层的表面流动。 非磁性层由Cu构成，并且具有面心立方晶格结构，其中{111}面优先在与层的表面平行的方向上取向。 被钉扎的磁性层和自由磁性层中的至少一个包括Co 2 Mn（Ge 1-x Sn 2 x Sn）合金层， 下标x满足0.2 <= x <= 0.8的范围; 而Mn 2 Mn（Ge 1-x Sn 2 x Sn）合金层具有体心立方晶格结构，其中{110 }平面优先在平行于该层的表面的方向上取向。

    Magnetic detectible head comprising free layer
    50.
    发明授权
    Magnetic detectible head comprising free layer 有权
    磁性可检测头包括自由层

    公开(公告)号：US07558029B2

    公开(公告)日：2009-07-07

    申请号：US11364533

    申请日：2006-02-27

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

    摘要： There is provided a magnetic detecting element having a large ΔRA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0≦a≦25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient β increases, and the product ΔRA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.

    摘要翻译： 提供了具有大DeltaRA的磁检测元件。 自由磁性层具有三层结构，其中CoFe层，NiaFeb合金层（其中a和b由以％表示，0 <= a <= 25，a + b = 100）和CoFe层 从底部层压。 如果存在于自由磁性层中的NiFe合金中的Ni的at％在该范围内，则自旋相关体散射系数β增加，并且磁检测元件的电阻变化的乘积DeltaRA与 元素可以增加。