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公开(公告)号：US20080130176A1
公开(公告)日：2008-06-05
申请号：US12019657
申请日：2008-01-25
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07414880B2
公开(公告)日：2008-08-19
申请号：US11378358
申请日：2006-03-20
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US07525837B2
公开(公告)日：2009-04-28
申请号：US12019657
申请日：2008-01-25
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译： 磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。 参考层设置在第一表面上并具有固定的磁化方向。 磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。 矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。 第一突出部从第一长边突出的位置从中心向第一短边移动。 第二突出部从第二长边突出的位置从中心向第二短边移动。
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公开(公告)号：US08472242B2
公开(公告)日：2013-06-25
申请号：US12748785
申请日：2010-03-29
IPC分类号： G11C11/14
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。
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公开(公告)号：US20110116305A1
公开(公告)日：2011-05-19
申请号：US13013141
申请日：2011-01-25
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。
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公开(公告)号：US20090225587A1
公开(公告)日：2009-09-10
申请号：US12470786
申请日：2009-05-22
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。
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47.发明授权Superconducting element having an intermediate layer with multiple fluorite blocks 失效具有具有多个萤石块的中间层的超导元件
公开(公告)号：US5629267A
公开(公告)日：1997-05-13
申请号：US409966
申请日：1995-03-24
申请人： Sumio Ikegawa , Tadao Miura
发明人： Sumio Ikegawa , Tadao Miura
CPC分类号： C23C16/408 , C23C14/087 , H01L39/225 , Y10S505/701 , Y10S505/702
摘要： A superconducting element is disclosed which comprises a lower superconducting layer, an upper superconducting layer, and an intermediate layer interposed between the lower and upper superconducting layers. The lower and upper superconducting layers are both form of a superconducting cuprate. The intermediate layer is formed of a layered cuprate containing in the crystal structure thereof multiple fluorite blocks represented by the formula:[B]AE.sub.2 (RE1.sub.1-y RE2.sub.y).sub.m+1 Cu.sub.2 O.sub.z(wherein [B] stands for a block layer, AE for an alkaline earth element, RE1 for at least one element selected from the group consisting of lanthanide elements and actinoid elements which form ions of valency of larger than 3, RE2 for at least one element selected from the group consisting of lanthanide elements which form ions of valency of 3 and yttrium, m for a number satisfying the expression m.gtoreq.2, y for a number satisfying the expression 0.ltoreq.y
摘要翻译： 公开了一种超导元件，其包括下部超导层，上部超导层和介于下部和上部超导层之间的中间层。 下部和上部超导层都是超导铜酸盐的形式。 中间层由包含其晶体结构的多层铁酸盐形成，由式[B] AE2（RE11-yRE2y）m + 1Cu2Oz表示的多个萤石块（其中[B]表示阻挡层，用于碱 对于选自镧系元素和锕系元素的至少一种元素的RE1，所述镧系元素和锕系元素形成离子的化合价大于3，至少一种选自镧系元素的元素，所述镧系元素形成离子的化合价为 3和钇，m满足满足表达式m> / = 2的数，y表示满足表达式0
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公开(公告)号：US07203088B2
公开(公告)日：2007-04-10
申请号：US11067670
申请日：2005-03-01
申请人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
发明人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.
摘要翻译： 可以减少读取错误的数量，并且可以产生大的读取信号。 提出一种驱动包含存储单元的磁阻随机存取存储器的方法，该存储单元的状态是使用单种写入脉冲在二进制电阻值之间切换的，该方法包括：选择存储单元; 读取所选存储单元的二进制电阻值之一的电阻值，读取的电阻值被定义为第一电阻值; 使用所述写入脉冲对所选择的存储单元执行第一写入操作，以将所选择的存储单元的电阻值改变为所述二进制电阻值中的另一个; 读取被定义为第二电阻值的二进制电阻值中的另一个; 将所述第二电阻值与所述第一电阻值进行比较，并且基于所述比较结果确定原始存储在所选存储单元中的数据; 以及使用所述写入脉冲对所选择的存储单元执行第二写入操作，以将所选存储单元的第二电阻值改变为所述第一电阻值。
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公开(公告)号：US20070014149A1
公开(公告)日：2007-01-18
申请号：US11384566
申请日：2006-03-21
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。
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公开(公告)号：US07015472B2
公开(公告)日：2006-03-21
申请号：US11063545
申请日：2005-02-24
IPC分类号： H01L31/062 , H01L31/113 , H01L31/058
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
摘要翻译： 成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层 基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。
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