公开(公告)号：US20100295057A1

公开(公告)日：2010-11-25

申请号：US12810052

申请日：2008-12-09

申请人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

发明人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

IPC分类号： H01L33/30 ,  H01L33/44

CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/505

摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

摘要翻译： 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

公开(公告)号：US07700938B2

公开(公告)日：2010-04-20

申请号：US12172549

申请日：2008-07-14

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

公开(公告)号：US20080272362A1

公开(公告)日：2008-11-06

申请号：US12172549

申请日：2008-07-14

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US07402831B2

公开(公告)日：2008-07-22

申请号：US11009217

申请日：2004-12-09

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US07126160B2

公开(公告)日：2006-10-24

申请号：US10871424

申请日：2004-06-18

申请人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

发明人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

IPC分类号： H01L33/00

CPC分类号： H01S5/183

摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.

摘要翻译： 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x Zn 1-x Se，其中x在0.44和0.54之间。 通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或Al y Al 1-y，其中y在0.44和0.52之间。 在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。 另一方面，本发明提供一种包括根据本发明的分层结构的激光器。 另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

公开(公告)号：US5834330A

公开(公告)日：1998-11-10

申请号：US726731

申请日：1996-10-07

申请人： Michael A. Haase ,  Paul F. Baude ,  Thomas J. Miller

发明人： Michael A. Haase ,  Paul F. Baude ,  Thomas J. Miller

IPC分类号： H01L21/465 ,  H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L21/465 ,  H01S5/327 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/347

摘要： A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

摘要翻译： 使用HX的水溶液形式的选择性蚀刻剂制造II-VI半导体器件，其中X是Cl或Br。 II-VI半导体器件由多层构成。 可以通过将Mg引入到半导体层之一来实现选择性蚀刻。 所得到的器件可以包括含Mg的半导体层。

公开(公告)号：US09293622B2

公开(公告)日：2016-03-22

申请号：US13264487

申请日：2010-05-03

申请人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

发明人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

IPC分类号： H01L31/055 ,  H05B33/10 ,  H01L33/00 ,  H01L33/50

CPC分类号： H01L31/055 ,  H01L33/0079 ,  H01L33/502 ,  H01L2224/48463 ,  H01L2933/0041 ,  H05B33/10 ,  Y02E10/52

摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

摘要翻译： 公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。 一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。 所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。 执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。 载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。 执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

公开(公告)号：US08541803B2

公开(公告)日：2013-09-24

申请号：US13379858

申请日：2010-06-25

申请人： Terry L. Smith ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Terry L. Smith ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01L33/50 ,  H01L33/00

CPC分类号： H01L33/08 ,  H01L33/26 ,  H01L33/502

摘要： Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.

摘要翻译： 公开的再发射半导体结构（RSC）可以提供不含镉的全色RGB或白光发射器件。 一些实施例可以包括包含III-V半导体并且将第一光子能量的光转换成较小光子能量的光的势阱，以及包括具有大于第一光子能级的带隙能量的II-VI半导体的窗口 光子能量。 一些实施例可以包括将具有第一光子能量的光转换成具有较小光子能量的光并且包括基本上不含Cd的II-VI半导体的势阱。 一些实施例可以包括包括第一III-V半导体并且将具有第一光子能量的光转换成具有较小光子能量的光的势阱，以及包括第二III-V半导体并且具有带隙能量 大于第一光子能量。

公开(公告)号：US20130069038A1

公开(公告)日：2013-03-21

申请号：US13698384

申请日：2011-05-31

申请人： Michael A. Haase ,  Thomas J. Miller ,  Terry L. Smith ,  Xiaoguang Sun ,  Junqing Xie

发明人： Michael A. Haase ,  Thomas J. Miller ,  Terry L. Smith ,  Xiaoguang Sun ,  Junqing Xie

IPC分类号： H01L33/50

CPC分类号： H01L33/504 ,  H01L21/02477 ,  H01L21/0256 ,  H01L21/02568 ,  H01L33/08 ,  H01L33/50

摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.

摘要翻译： 描述发光系统。 特别地，描述了在这些系统中使用的发光系统和光转换组件。 发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

公开(公告)号：US08148742B2

公开(公告)日：2012-04-03

申请号：US12748956

申请日：2010-03-29

申请人： Thomas J. Miller ,  Michael A. Haase

发明人： Thomas J. Miller ,  Michael A. Haase

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/28

摘要： An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.

摘要翻译： 提供包括两个或更多个发光II型界面的LED，其中II型界面中的至少两个界面的转换能量不同于至少5％，或更通常至少10％，并且其中至少一种类型 II接口位于pn结内。 或者，提供包括两个或更多个发光II型界面的LED，其中至少两个II型界面的跃迁能量不同于至少5％，或更通常至少10％。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面，其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内，或者不在pn或pin结内。 在后一种情况下，II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。 此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。