摘要:
A modest (2-5 fold) increase in androgen receptor (AR) mRNA is the only expression change consistently associated with developing resistance to antiandrogen therapy. Increased levels of AR confer resistance to anti-androgens by amplifying signal output from low levels of residual ligand and altering the normal response to antagonists. This invention provides cell based assays for use in the examination of new therapeutic modalities and provides for the design of novel antiandrogen compounds.
摘要:
The present invention provides daptomycin stereoisomeric compounds, methods and intermediates for preparing daptomycin and daptomycin stereoisomoeric compounds, as well as pharmaceutical compositions of these compounds and methods of using these compositions as antibacterial agents.
摘要:
In a generator with a cooling system which draws in, from the generator, cooling medium heated by the heat-generating elements of the generator and which guides the hot cooling medium to at least two cooling units (23), which cooling units (23) operate in parallel and cool the cooling medium before it is led back to the heat-generating elements of the generator, operation substantially uninfluenced by failures of the cooling units (23) is made possible by means being provided which mix together the cooling medium flows (31) flowing from the different cooling units (23) after they emerge from the cooling units (23) and before they are supplied to the heat-generating elements of the generator.
摘要:
Bridged fluorenyl/indenyl metallocenes having substituents at the 3 position of the indenyl and the use thereof in the polymerization of olefins are disclosed. Also a new method for preparing bridged fluorenyl/indenyl ligands wherein the indenyl has a substituent in the 3 position and the preparation of metallocenes with such ligands.
摘要:
An (organo) (omega-alkenyl) (cyclopentacarbyl) silane compound is provided. A process that produces an (organo) (omega-alkenyl) (cyclopentacarbyl) silane compound is provided. A process to polymerize olefins, especially ethylene, with a metallocene compound that comprises an (organo) (omega-alkenyl) (cyclopentacarbyl) silane compound is provided.
摘要:
The invention concerns an apparatus for the plasma treatment of substrates in a plasma discharge excited by a high frequency between two electrodes 3, 8 to which power is supplied by a high frequency source, where the first electrode is configured as a hollow electrode 3 and the second one as an electrode 8 holding a substrate 7 and situated upstream of the hollow chamber 10 of the first electrode which it also passes. The hollow electrode is enclosed by a dark space shield and has an edge pointing in direction of the second electrode and also has projection located between the edge. These projections are on the same potential as the second electrode. The radio frequency power is thus decoupled from the substrate bias voltage (selfbias) and the distance between the first and the second electrode can be changed.
摘要:
The invention relates to a device for coupling microwave power out of a first chamber (21) into a second chamber (22). For this purpose a primary antenna (2) and a secondary antenna (3) are provided, the primary antenna (2) reaching into the first chamber (21), while the secondary antenna (3) reaches into the second chamber (22). Between the first chamber (21) and the second chamber (22) there is provided a dividing wall (20) through which a current-carrying means (11) is brought, which joins together the primary antenna (2) and the secondary antenna (3).
摘要:
Device for mounting thin, preferably flat substrates (11, 11', . . . ) and for the transport of these substrates (11, 11'. . . ) in treatment apparatus, for example vacuum coating and etching apparatus, the device being formed by a frame (1), preferably in a rectangular shape, which is of such size that in the area surrounded by the frame (1) a support, e.g., a support formed of spoke-like round rods (6, 6', . . . ). can be inserted, and on this support fastening means for mounting the substrates (11, 11', . . . ) are provided, which hold the substrates (11, 11', . . . ) such that their substantially planar lateral surfaces run approximately parallel to the plane of the frame.
摘要:
A device for heating up a substrate to be coated in a vacuum coating system, for example a plasma sputtering system, has a heating device 23 disposed on a substrate carriage 20 which can be moved across the process chamber transversely to the coating source. This heating device has an independent voltage generator, for example a rechargeable accumulator, disposed in a special chamber of the heating device. The chamber for the accumulators can be hermetically sealed by way of a cover such that this chamber is under atmospheric pressure even when the substrate carraige 20, together with the heating device 23, enters the process chamber of the system which contains the vacuum. The accumulators are recharged via plug couplings 14,14' after the heating device has heated up the substrate 8 which is clamped thereto and the device has exited the process chamber via a sluiceway.