公开(公告)号：US10510394B2

公开(公告)日：2019-12-17

申请号：US15831076

申请日：2017-12-04

Applicant: Micron Technology, Inc.

Inventor： Scott James Derner ,  Christopher John Kawamura ,  Charles L. Ingalls

IPC: G11C11/22

Abstract: Methods, systems, and apparatuses related to a reprogrammable non-volatile latch are described. A latch may include ferroelectric cells, ferroelectric capacitors, a sense component, and other circuitry and components related to ferroelectric memory technology. The ferroelectric latch may be independent from (or exclusive of) a main ferroelectric memory array. The ferroelectric latch may be positioned anywhere in the memory device. In some instances, a ferroelectric latch may be positioned and configured to be dedicated to single piece of circuitry in the memory device.

公开(公告)号：US10418084B2

公开(公告)日：2019-09-17

申请号：US15426871

申请日：2017-02-07

Applicant: Micron Technology, Inc.

Inventor： Scott James Derner ,  Christopher John Kawamura

IPC: G11C11/22 ,  G06F3/06

Abstract: Methods, systems, and devices for operating a memory cell or memory cells are described. Cells of a memory array may be pre-written, which may include writing the cells to one state while a sense component is isolated from digit lines of the array. Read or write operations may be executed at the sense component while the sense component is isolated, and the cell may be de-isolated (e.g., connected to the digit lines) when write operations are completed. The techniques may include techniques accessing a memory cell of a memory array, isolating a sense amplifier from a digit line of the memory array based at least in part on the accessing of the cell, firing the sense amplifier, and pre-writing the memory cell of the memory array to a second data state while the sense amplifier is isolated. In some examples, the memory cell may include a ferroelectric memory cell.

公开(公告)号：US20190172515A1

公开(公告)日：2019-06-06

申请号：US16189416

申请日：2018-11-13

Applicant: Micron Technology, Inc.

Inventor： Christopher John Kawamura ,  Scott James Derner

IPC: G11C11/22 ,  G11C11/4074 ,  G11C11/408 ,  H01L23/528 ,  H01L27/11507 ,  G11C5/10 ,  G11C11/4094 ,  G11C11/4091 ,  G11C7/12 ,  G11C7/08 ,  H01L27/108

Abstract: Methods, systems, and devices for periphery fill and localized capacitance are described. A memory array may be fabricated with certain containers connected to provide capacitance rather than to operate as memory cells. For example, a memory cell having one or two transistors, or other switching components, and one capacitor, such as a ferroelectric or dielectric capacitor, may be electrically isolated from one or more containers sharing a common access line, and the isolated containers may be used as capacitors. The capacitors may be used for filtering in some examples. Or the capacitance may be used to boost or regulate voltage in, for example, support circuitry.

公开(公告)号：US10163482B2

公开(公告)日：2018-12-25

申请号：US15855326

申请日：2017-12-27

Applicant: Micron Technology, Inc.

Inventor： Daniele Vimercati ,  Scott James Derner ,  Umberto Di Vincenzo ,  Christopher John Kawamura ,  Eric S. Carman

IPC: G11C11/22

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A ground reference scheme may be employed in a digit line voltage sensing operation. A positive voltage may be applied to a memory cell; and after a voltage of the digit line of the cell has reached a threshold, a negative voltage may be applied to cause the digit line voltages to center around ground before a read operation. In another example, a first voltage may be applied to a memory cell and then a second voltage that is equal to an inverse of the first voltage may be applied to a reference capacitor that is in electronic communication with a digit line of the memory cell to cause the digit line voltages to center around ground before a read operation.

公开(公告)号：US10153023B2

公开(公告)日：2018-12-11

申请号：US15858747

申请日：2017-12-29

Applicant: Micron Technology, Inc.

Inventor： Scott James Derner ,  Christopher John Kawamura

IPC: G11C11/22

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be initialized to a first state and a second ferroelectric memory cell may be initialized to a different state. Each state may have a corresponding digit line voltage. The digit lines of the first and second ferroelectric memory cells may be connected so that charge-sharing occurs between the two digit lines. The voltage resulting from the charge-sharing between the two digit lines may be used by other components as a reference voltage.

公开(公告)号：US20180081774A1

公开(公告)日：2018-03-22

申请号：US15267817

申请日：2016-09-16

Applicant: Micron Technology, Inc.

Inventor： Christopher John Kawamura ,  Scott James Derner ,  Charles L. Ingalls

IPC: G06F11/20 ,  G11C11/22

CPC classification number: G06F11/2094 ,  G06F11/1068 ,  G06F11/14 ,  G06F2201/805 ,  G11C11/221 ,  G11C11/2255 ,  G11C11/2257 ,  G11C11/2273 ,  G11C11/2275 ,  G11C29/1201 ,  G11C29/36 ,  G11C29/42 ,  G11C29/4401 ,  G11C29/52 ,  G11C2029/3602 ,  G11C2029/4402

Abstract: Methods, systems, and apparatuses for storing operational information related to operation of a non-volatile array are described. For example, the operational information may be stored in a in a subarray of a memory array for use in analyzing errors in the operation of memory array. In some examples, an array driver may be located between a command decoder and a memory array. The array driver may receive a signal pattern used to execute an access instruction for accessing non-volatile memory cells of a memory array and may access the first set of non-volatile memory cells according to the signal pattern. The array driver may also store the access instruction (e.g., the binary representation of the access instruction) at a non-volatile subarray of the memory array.

公开(公告)号：US20170365321A1

公开(公告)日：2017-12-21

申请号：US15690873

申请日：2017-08-30

Applicant: Micron Technology, Inc.

Inventor： Christopher John Kawamura ,  Scott James Derner

IPC: G11C11/22

CPC classification number: G11C11/2273 ,  G11C11/221 ,  G11C11/2275

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A memory device may maintain a digit line voltage at a ground reference for a duration associated with biasing a ferroelectric capacitor of a memory cell. For example, a digit line that is in electronic communication with a ferroelectric capacitor may be virtually grounded while a voltage is applied to a plate of the ferroelectric capacitor, and the ferroelectric capacitor may be isolated from the virtual ground after a threshold associated with applying the voltage to the plate is reached. A switching component (e.g., a transistor) that is in electronic communication with the digit line and virtual ground may be activated to virtually ground the digit line and deactivated to isolate the digit line from virtual ground.

公开(公告)号：US20240274180A1

公开(公告)日：2024-08-15

申请号：US18581260

申请日：2024-02-19

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Tae H. Kim ,  Scott James Derner

IPC: G11C11/22

CPC classification number: G11C11/2273 ,  G11C11/221 ,  G11C11/2255 ,  G11C11/2257

Abstract: Methods, systems, and devices for sensing a memory with shared sense components are described. A device may activate a word line and a plate line each coupled with a set of memory cells, where each memory cell of the set of memory cells is coupled with a respective digit line of a set of digit lines. The device may activate a set of switching components to couple each digit line of the set of digit lines with a respective sense component of a set of sense components, where each switching component of the set of switching components is coupled with a respective memory cell of the set of memory cells. The device may sense the set of memory cells based on activating the word line and the plate line and based on coupling the set of digit lines with the set of sense components.

公开(公告)号：US11915735B2

公开(公告)日：2024-02-27

申请号：US18048738

申请日：2022-10-21

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Tae H. Kim ,  Scott James Derner

IPC: G11C11/22

CPC classification number: G11C11/2273 ,  G11C11/221 ,  G11C11/2255 ,  G11C11/2257

Abstract: Methods, systems, and devices for sensing a memory with shared sense components are described. A device may activate a word line and a plate line each coupled with a set of memory cells, where each memory cell of the set of memory cells is coupled with a respective digit line of a set of digit lines. The device may activate a set of switching components to couple each digit line of the set of digit lines with a respective sense component of a set of sense components, where each switching component of the set of switching components is coupled with a respective memory cell of the set of memory cells. The device may sense the set of memory cells based on activating the word line and the plate line and based on coupling the set of digit lines with the set of sense components.

公开(公告)号：US11200937B2

公开(公告)日：2021-12-14

申请号：US16675021

申请日：2019-11-05

Applicant: Micron Technology, Inc.

Inventor： Scott James Derner ,  Christopher John Kawamura ,  Charles L. Ingalls

IPC: G11C11/22

Abstract: Methods, systems, and apparatuses related to a reprogrammable non-volatile latch are described. A latch may include ferroelectric cells, ferroelectric capacitors, a sense component, and other circuitry and components related to ferroelectric memory technology. The ferroelectric latch may be independent from (or exclusive of) a main ferroelectric memory array. The ferroelectric latch may be positioned anywhere in the memory device. In some instances, a ferroelectric latch may be positioned and configured to be dedicated to single piece of circuitry in the memory device.