中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

84 records (took 0.033 seconds)

    Semiconductor devices with magnetic regions and stressor structures, and methods of operation
    41.
    发明授权
    Semiconductor devices with magnetic regions and stressor structures, and methods of operation 有权

    公开(公告)号：US10090457B2

    公开(公告)日：2018-10-02

    申请号：US15681763

    申请日：2017-08-21

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

    Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

    Magnetic tunnel junctions
    42.
    发明授权
    Magnetic tunnel junctions 有权

    公开(公告)号：US10062835B2

    公开(公告)日：2018-08-28

    申请号：US15588994

    申请日：2017-05-08

    Applicant: Micron Technology, Inc.

    Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

    IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

    CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

    Magnetic tunnel junctions
    45.
    发明授权
    Magnetic tunnel junctions 有权

    公开(公告)号：US09960346B2

    公开(公告)日：2018-05-01

    申请号：US14706182

    申请日：2015-05-07

    Applicant: Micron Technology, Inc.

    Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy ,  Witold Kula

    IPC: H01L43/08

    CPC classification number: H01L43/08

    Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.

    METHODS OF FORMING MAGNETIC MEMORY CELLS AND SEMICONDUCTOR DEVICES
    47.
    发明申请
    METHODS OF FORMING MAGNETIC MEMORY CELLS AND SEMICONDUCTOR DEVICES 有权
    形成磁记忆体和半导体器件的方法

    公开(公告)号：US20160359105A1

    公开(公告)日：2016-12-08

    申请号：US15239481

    申请日：2016-08-17

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    Abstract translation: 磁性电池包括中间氧化物区域（例如，隧道势垒）和次级氧化物区域之间的自由区域。 两个氧化物区域可以被配置为与自由区域引起磁各向异性（“MA”），从而提高自由区域的MA强度。 接近次氧化物区域的吸气剂材料被配制和配置成从次氧化物区域去除氧气，降低氧化物浓度和次级氧化物区域的电阻。 因此，次级氧化物区域对电池芯的电阻仅有最小的贡献。 因此，本公开的实施例使得能够实现高有效磁阻，低电阻面积乘积和低编程电压以及增强的MA强度。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

    MAGNETIC MEMORY CELLS, SEMICONDUCTOR DEVICES, AND METHODS OF OPERATION
    48.
    发明申请
    MAGNETIC MEMORY CELLS, SEMICONDUCTOR DEVICES, AND METHODS OF OPERATION 有权
    磁记忆体，半导体器件和操作方法

    公开(公告)号：US20160351793A1

    公开(公告)日：2016-12-01

    申请号：US15181061

    申请日：2016-06-13

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej S. Sandhu ,  Witold Kula

    IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

    Abstract translation: 磁性电池芯包括靠近磁性区域（例如，自由区域或固定区域）的至少一个应力源结构。 磁性区域可以由表现出磁致伸缩性的磁性材料形成。 在切换期间，应力器结构可能经受通过磁性电池芯的编程电流。 响应于当前的应力结构可能会改变大小。 由于尺寸变化，应力结构可能对磁性区域施加应力，从而改变其磁各向异性。 在一些实施例中，磁性区域的MA强度可能在切换期间降低，从而可以使用较低的编程电流来切换自由区域的磁性取向。 在一些实施例中，多个应激源结构可以包括在磁性细胞芯中。 还公开了制造和操作的方法以及相关的装置结构和系统。

    Magnetic memory cells and methods of formation
    49.
    发明授权
    Magnetic memory cells and methods of formation 有权
    磁记忆细胞和形成方法

    公开(公告)号：US09406874B2

    公开(公告)日：2016-08-02

    申请号：US14582826

    申请日：2014-12-24

    Applicant: Micron Technology, Inc.

    Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    IPC: H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

    Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

    Memory cells, methods of fabrication, semiconductor device structures, and memory systems
    50.
    发明授权
    Memory cells, methods of fabrication, semiconductor device structures, and memory systems 有权
    存储单元，制造方法，半导体器件结构和存储器系统

    公开(公告)号：US09379315B2

    公开(公告)日：2016-06-28

    申请号：US13797185

    申请日：2013-03-12

    Applicant: Micron Technology, Inc.

    Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

    IPC: G11B5/31 ,  H01L43/12 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

    Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

Patent Agency Ranking