Optoelectronic device and the manufacturing method thereof
    42.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号:US08207550B2

    公开(公告)日:2012-06-26

    申请号:US13021307

    申请日:2011-02-04

    IPC分类号: H01L33/58 H01L33/60

    摘要: One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.

    摘要翻译: 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层,具有第一薄层电阻,第一厚度和第一杂质浓度; 具有第二薄层电阻,第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料,并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层,其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层,从而形成窗口层和半导体系统之间的宽度差,并且宽度差异大于1微米。

    Light-emitting device
    43.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US07967491B2

    公开(公告)日:2011-06-28

    申请号:US12891927

    申请日:2010-09-28

    IPC分类号: F21V33/00

    摘要: This application relates to a light-emitting device comprising a light channel having an upper surface, a lower surface opposite to the upper surface, an inner surface intersecting with each of the upper and lower surface by different angles, and an escape surface; and a light-emitting element having a bottom surface substantially parallel to the inner surface and emitting light traveling inside the light channel toward the escape surface. In an embodiment, the escape surface of the light-emitting device is an inclined plane with lens array thereon.

    摘要翻译: 本申请涉及一种发光装置,包括具有上表面,与上表面相对的下表面的光通道,与上表面和下表面中的每一个以不同角度相交的内表面和逃逸表面; 以及发光元件,其具有基本上平行于内表面的底表面,并且发射在光通道内朝向逸出表面行进的光。 在一个实施例中,发光装置的逸出表面是其上具有透镜阵列的倾斜平面。

    LIGHT EMITTING DIODE CHIP
    44.
    发明申请
    LIGHT EMITTING DIODE CHIP 有权
    发光二极管芯片

    公开(公告)号:US20100072497A1

    公开(公告)日:2010-03-25

    申请号:US12629030

    申请日:2009-12-01

    IPC分类号: H01L33/00

    摘要: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

    摘要翻译: 发光二极管芯片包括永久性基板,其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯,并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。

    Photoelectronic device
    45.
    发明申请
    Photoelectronic device 有权
    光电器件

    公开(公告)号:US20090109688A1

    公开(公告)日:2009-04-30

    申请号:US12289478

    申请日:2008-10-29

    IPC分类号: F21V13/00

    摘要: A photoelectronic device including a carrier, a light-emitting component mounted on the carrier; a patterned structure deposited on the carrier and around the light-emitting component; and a transparent sealing structure formed above the light-emitting component. The patterned structure mentioned above can cause the transparent sealing structure to be focused above the light-emitting component, and restrained in the patterned structure. The transparent sealing structure with predetermined proportional configuration is obtained by controlling the quantity of the transparent sealing structure. Therefore light efficiency of the photoelectronic device can be greatly improved.

    摘要翻译: 一种光电子器件,包括载体,安装在载体上的发光部件; 沉积在载体上并围绕发光部件的图案结构; 以及形成在发光部件上方的透明密封结构。 上述图案化结构可以使透明密封结构聚焦在发光部件的上方,并被限制在图案化结构中。 通过控制透明密封结构的数量来获得具有预定比例构型的透明密封结构。 因此,可以大大提高光电子器件的光效率。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME
    46.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20080105863A1

    公开(公告)日:2008-05-08

    申请号:US11749139

    申请日:2007-05-15

    IPC分类号: H01L33/00

    摘要: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

    摘要翻译: 发光二极管包括永久性基板,其具有形成在永磁基板的第一表面上的芯片保持空间; 绝缘层和金属层,其顺序形成在所述永久基板的第一表面和所述芯片保持空间上,其中所述金属层还包括第一区域和不彼此接触的第二区域; 芯片,其具有附接在所述芯片保持空间的底部上的第一表面,与所述金属层的所述第一区域接触,但不与所述金属层的所述第二区域接触; 填充在芯片保持空间和芯片之间的填充结构; 以及形成在所述芯片的第二表面上的第一电极。 芯片包括发光区域,并且通过使用芯片接合技术来实现金属层的第一区域和发光区域之间的电连接。

    Light-emitting device
    47.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US09202983B2

    公开(公告)日:2015-12-01

    申请号:US13421898

    申请日:2012-03-16

    摘要: A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer.

    摘要翻译: 发光装置包括基板; 包括第一类型半导体层,第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠; 形成在所述基板和所述半导体叠层之间的接合层; 以及物理地埋在第一类型半导体层中的多个埋置电极。

    Light-emitting element and the manufacturing method thereof
    48.
    发明授权
    Light-emitting element and the manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号:US08704257B2

    公开(公告)日:2014-04-22

    申请号:US13022098

    申请日:2011-02-07

    IPC分类号: H01L33/00

    摘要: A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.

    摘要翻译: 发光元件包括用于发光的发光叠层和基板结构,包括:第一基板,设置在所述发光堆叠下方,并具有面向所述发光叠层的第一表面; 以及第二基板,其设置在所述发光堆叠下方并且具有面向所述发光叠层的第二表面; 以及形成在第一基板和第二基板之间并具有不垂直于第一表面的倾斜角度的反射层。

    METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE
    49.
    发明申请
    METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE 有权
    用于测试发光装置的方法和装置

    公开(公告)号:US20130201483A1

    公开(公告)日:2013-08-08

    申请号:US13365820

    申请日:2012-02-03

    IPC分类号: G01J1/04 G01J1/42

    摘要: Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes with the image. An apparatus for testing a light-emitting device comprising a plurality of light-emitting diodes is also disclosed. The apparatus comprises: a current source to provide a current to drive the plurality of the light-emitting diodes; an image receiving device for receiving an image of the light-emitting device in the driven state; and a processing unit for determining a luminous intensity of each of the light-emitting diodes with the image.

    摘要翻译: 公开了一种用于测试发光器件的方法,包括以下步骤:提供包括多个发光二极管的发光器件; 用电流驱动多个发光二极管; 产生发光装置的图像; 以及用图像确定每个发光二极管的发光强度。 还公开了一种用于测试包括多个发光二极管的发光器件的装置。 该装置包括:电流源,用于提供驱动多个发光二极管的电流; 图像接收装置,用于接收驱动状态下的发光装置的图像; 以及处理单元,用于利用图像确定每个发光二极管的发光强度。

    Light-emitting semiconductor device and package thereof
    50.
    发明授权
    Light-emitting semiconductor device and package thereof 有权
    发光半导体器件及其封装

    公开(公告)号:US08395175B2

    公开(公告)日:2013-03-12

    申请号:US13569612

    申请日:2012-08-08

    申请人: Chia-Liang Hsu

    发明人: Chia-Liang Hsu

    IPC分类号: H01L33/00

    摘要: The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.

    摘要翻译: 本申请公开了一种包括具有上表面,下表面和侧壁的透明层的发光半导体器件; 布置在所述上​​表面上的波长转换结构; 外延结构,其布置在下表面上并具有不具有透明层和波长转换结构的侧表面; 以及布置成覆盖侧壁的反射壁。