公开(公告)号：US07154130B2

公开(公告)日：2006-12-26

申请号：US10776338

申请日：2004-02-12

Applicant: Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

Inventor： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC: H01L29/74 ,  H01L31/111

CPC classification number: H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

Abstract: A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

公开(公告)号：US20060284217A1

公开(公告)日：2006-12-21

申请号：US11501777

申请日：2006-08-10

Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/80

CPC classification number: H01L29/8083 ,  H01L29/1608

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US20060274756A1

公开(公告)日：2006-12-07

申请号：US11488118

申请日：2006-07-17

Applicant: Snehal Karia ,  Rajesh Kumar

Inventor： Snehal Karia ,  Rajesh Kumar

IPC: H04L12/56

CPC classification number: H04L47/24 ,  H04L47/15 ,  H04L47/70 ,  H04L47/762 ,  H04L47/803 ,  H04L47/822 ,  H04L2012/563 ,  H04L2012/5636

Abstract: Methods and apparatus are disclosed for changing the bandwidth or other traffic characteristic of an established packet call in response to an identification of the requirements of the call. For example, in response to the detection of a type of call, such as a fax or modem call, ATM signaling is performed with peer signaling agent(s) located in the ATM network to increase the bandwidth of an already established portion of a call through the ATM network. This signaling typically includes sending a call modify request message and receiving a modify acknowledgement message, with these messages typically, but not limited to, conforming with a Q.2963 signaling standard.

Abstract translation: 公开了用于响应于呼叫要求的识别来改变已建立分组呼叫的带宽或其他业务特性的方法和装置。 例如，响应于诸如传真或调制解调器呼叫的呼叫类型的检测，ATM信令与位于ATM网络中的对等信令代理一起执行以增加呼叫已经建立的部分的带宽 通过ATM网络。 该信令通常包括发送呼叫修改请求消息并接收修改确认消息，其中这些消息通常但不限于符合Q.2963信令标准。

公开(公告)号：US20060233741A1

公开(公告)日：2006-10-19

申请号：US11389564

申请日：2006-03-24

Applicant: Rajesh Kumar ,  Ashok Cholli

Inventor： Rajesh Kumar ,  Ashok Cholli

IPC: A61K31/785 ,  C08G65/14

CPC classification number: C07C235/38 ,  C07C239/16 ,  C08G8/08 ,  C08G73/028 ,  C08K5/005 ,  C08K5/20 ,  C09K15/08 ,  C09K15/24 ,  C10L1/224 ,  C10L2230/081

Abstract: Alkylated antioxidant macromolecules are represented by Structural Formula 1: wherein the variables are described herein. Also included are methods of making the molecules and methods of using the molecules as antioxidants.

Abstract translation: 烷基化抗氧化剂大分子由结构式1表示：其中变量在本文中描述。 还包括制备分子的方法和使用分子作为抗氧化剂的方法。

公开(公告)号：US20060189824A1

公开(公告)日：2006-08-24

申请号：US11360020

申请日：2006-02-22

Applicant: Rajesh Kumar ,  Suizhou Yang ,  Vijayendra Kumar ,  Ashok Cholli

Inventor： Rajesh Kumar ,  Suizhou Yang ,  Vijayendra Kumar ,  Ashok Cholli

IPC: C07C215/34

CPC classification number: C07C213/02 ,  C07C215/50 ,  C07C229/38 ,  C08K5/005 ,  C10M133/14 ,  C10M149/22 ,  C10M159/12 ,  C10M177/00 ,  C10M2207/026 ,  C10M2207/08 ,  C10M2215/04 ,  C10M2215/06 ,  C10M2215/066 ,  C10N2230/10 ,  C10N2270/00

Abstract: Disclosed are compounds represented by structural formula (I): methods of producing compounds represented by structural formula (I) and their use in inhibiting oxidation in an oxidizable material.

Abstract translation: 公开了由结构式（I）表示的化合物：由结构式（I）表示的化合物的制备方法及其在可氧化材料中的抑制氧化的用途。

公开(公告)号：US07085279B1

公开(公告)日：2006-08-01

申请号：US09752075

申请日：2000-12-29

Applicant: Rajesh Kumar ,  Snehal Karia

Inventor： Rajesh Kumar ,  Snehal Karia

IPC: H04L12/56

CPC classification number: H04L12/5601 ,  H04L2012/563 ,  H04L2012/5671 ,  H04M7/063

Abstract: A method that sends ATM source identification and an ATM-TDM correlation tag from an ATM source gateway to a telephony signaling control network; and then receives at an ATM destination gateway the ATM source identification and the ATM-TDM correlation tag as sent from the telephony signaling control network; and then sends the ATM-TDM correlation tag from the ATM destination gateway to the ATM source gateway to establish a connection between the ATM destination gateway and the ATM source gateway.

Abstract translation: 一种将ATM源标识和ATM-TDM相关标签从ATM源网关发送到电话信令控制网络的方法; 然后在ATM目的地网关处接收从电话信令控制网络发送的ATM源标识和ATM-TDM相关标签; 然后将ATM-TDM相关标签从ATM目的网关发送到ATM源网关，建立ATM目的网关与ATM源网关之间的连接。

公开(公告)号：US20060099271A1

公开(公告)日：2006-05-11

申请号：US11312371

申请日：2005-12-21

Applicant: Michael Rickey ,  J. Michael Ramstack ,  Rajesh Kumar

Inventor： Michael Rickey ,  J. Michael Ramstack ,  Rajesh Kumar

IPC: A61K9/14 ,  B29C39/10

CPC classification number: A61K38/09 ,  A61K9/1641 ,  A61K9/1647 ,  A61K9/1682 ,  A61K9/1694 ,  A61K9/5089 ,  A61K31/519 ,  B01J8/025 ,  B01J13/08 ,  B01J13/12 ,  B01J13/206 ,  B01J14/00 ,  B01J19/121 ,  B01J19/122 ,  B01J19/2415 ,  B01J2219/0877

Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.

公开(公告)号：US20060094857A1

公开(公告)日：2006-05-04

申请号：US11252819

申请日：2005-10-18

Applicant: Rajesh Kumar ,  Arthur Watterson ,  Virinder Parmar ,  Jayant Kumar ,  Lynne Samuelson

Inventor： Rajesh Kumar ,  Arthur Watterson ,  Virinder Parmar ,  Jayant Kumar ,  Lynne Samuelson

IPC: C08L61/00 ,  C09K15/04 ,  C09K3/00

CPC classification number: C12P7/62 ,  C12P9/00

Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。

公开(公告)号：US07005678B2

公开(公告)日：2006-02-28

申请号：US10984953

申请日：2004-11-10

Applicant: Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L31/0312

CPC classification number: H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。

公开(公告)号：US20060007916A1

公开(公告)日：2006-01-12

申请号：US10982620

申请日：2004-11-03

Applicant: Paul Jones ,  Rajesh Kumar ,  Mehryar Garakani ,  Herbert Wildfeuer

Inventor： Paul Jones ,  Rajesh Kumar ,  Mehryar Garakani ,  Herbert Wildfeuer

IPC: H04L12/28 ,  H04L12/56 ,  H04L12/66

CPC classification number: H04L47/10 ,  H04L12/66 ,  H04L29/06027 ,  H04L47/11 ,  H04L47/2416 ,  H04L47/263 ,  H04L47/34 ,  H04L65/1069 ,  H04L65/1083

Abstract: Text is interleaved and transported along with media data over the same real-time Internet Protocol (IP) media transport session. A network processing device identifies text characters corresponding with text signaling. The identified text characters are formatted into text packets and sent over the same real-time IP media transport session used for real-time media transport. The media transport session can identify the sequence that the text characters are transmitted and can specify a maximum character transfer rate.

Abstract translation: 文本与媒体数据在相同的实时互联网协议（IP）媒体传输会话上进行交织和传输。 网络处理设备识别与文本信令相对应的文本字符。 所识别的文本字符被格式化成文本分组，并通过用于实时媒体传输的相同的实时IP媒体传输会话发送。 媒体传输会话可以识别发送文本字符的顺序，并且可以指定最大字符传输速率。