Apparatus for in-cassette monitoring of semiconductor wafers
    41.
    发明授权
    Apparatus for in-cassette monitoring of semiconductor wafers 有权
    用于半导体晶片的盒内监视的装置

    公开(公告)号:US06833048B1

    公开(公告)日:2004-12-21

    申请号:US10110312

    申请日:2002-08-27

    CPC classification number: H01L21/67265 Y10S414/135 Y10S414/14

    Abstract: A processing apparatus is presented for applying to a substantially flat workpiece contained in a cassette, and a processing tool coupled to the housing. The processing tool is displaceable along three mutually perpendicular axes relative to the cassette for inserting the tool into the gap and moving the tool inside the gap relative to the workpiece. The processing apparatus can be utilized in chemical mechanical polishing arrangement, photolithography arrangement, and CVD arrangement.

    Abstract translation: 提出了一种处理装置,用于施加到容纳在盒中的基本平坦的工件,以及耦合到壳体的处理工具。 处理工具可相对于盒子沿三个相互垂直的轴线移位,用于将工具插入到间隙中并使工具相对于工件在间隙内移动。 该处理装置可用于化学机械抛光装置,光刻装置和CVD装置中。

    Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects
    42.
    发明授权
    Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects 有权
    用于监测应用于基于金属的图案化物体的化学机械平面化处理的方法和装置

    公开(公告)号:US06801326B2

    公开(公告)日:2004-10-05

    申请号:US09942849

    申请日:2001-08-31

    Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

    Abstract translation: 提出了一种用于光学控制由应用于具有图案化区域的制品的抛光工具执行的化学机械平面化(CMP)工艺的质量的方法。 该物品包含多个由多个不同层形成的堆叠,从而限定了间隔金属区域形式的图案。 该方法能够定位物品上的残留物,侵蚀和凹陷条件中的至少一种。 选择物品上至少一个预定的位置进行控制。 该至少一个预定位置被照亮,并且检测从该位置反射的光分量的光谱特性。 分析表示检测到的光成分的数据,以确定至少一个照明部位内的物品的至少一个参数。

    Apparatus for integrated monitoring of wafers and for process control in the semiconductor manufacturing and a method for use thereof
    43.
    发明授权
    Apparatus for integrated monitoring of wafers and for process control in the semiconductor manufacturing and a method for use thereof 有权
    用于半导体制造中的晶片的集成监视和过程控制的装置及其使用方法

    公开(公告)号:US06791686B1

    公开(公告)日:2004-09-14

    申请号:US09626793

    申请日:2000-07-26

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: G03F7/70608 G01B11/00

    Abstract: An integrated apparatus for optically monitoring semiconductor workpieces includes a supporting assembly for supporting the workpiece, and an optical monitoring unit positioned opposite the surface of the workpiece and separated therefrom by an optical window. The optical monitoring unit is mounted for reciprocating movement within a plane parallel to the window for monitoring at least one desired parameter of the semiconductor workpiece and has pattern recognition and auto-focusing utilities. The optical window includes one or more relatively small window fragments located at predetermined locations to enable observation of desired, predetermined portions of the workpiece. The size and shape of the window fragments are selected according to the requirements of transparency in a predetermined spectral range, mechanical strength and ability of pattern recognition and auto-focusing. A method of monitoring semiconductor workpieces through an optical window including one or more relatively small window fragments can be practiced with the integrated apparatus.

    Abstract translation: 一种用于光学监测半导体工件的集成设备,包括用于支撑工件的支撑组件,以及与工件表面相对定位并通过光学窗口分离的光学监视单元。 光学监测单元被安装用于在与窗口平行的平面内往复运动,用于监测半导体工件的至少一个期望参数,并且具有图案识别和自动聚焦实用程序。 光学窗口包括位于预定位置处的一个或多个相对较小的窗口碎片,以能够观察到工件的期望的预定部分。 窗口片段的大小和形状根据预定光谱范围,机械强度和图案识别和自动对焦能力的透明度要求进行选择。 通过包括一个或多个相对小的窗口碎片的光学窗口监视半导体工件的方法可以用集成装置来实施。

    Method and system for measuring patterned structures
    44.
    发明授权
    Method and system for measuring patterned structures 有权
    用于测量图案结构的方法和系统

    公开(公告)号:US06657736B1

    公开(公告)日:2003-12-02

    申请号:US09610889

    申请日:2000-07-06

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determing a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统,其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层,结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量,每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明,检测从该结构返回的光的光谱特性,以及产生测量 数据代表。 分析通过第一测量获得的测量数据,从而确定结构的至少一个参数。 然后,利用该确定的参数,同时分析通过第二测量获得的测量数据,使得能够确定结构的轮廓。

    Monitoring apparatus and method particularly useful in photolithographically processing substrates
    45.
    发明授权
    Monitoring apparatus and method particularly useful in photolithographically processing substrates 有权
    监控设备和方法特别适用于光刻处理基板

    公开(公告)号:US08482715B2

    公开(公告)日:2013-07-09

    申请号:US12911371

    申请日:2010-10-25

    Abstract: A system for determining at least two properties of a substrate, including a supporting plate configured to support the substrate, and a measurement device coupled to the supporting plate, including an illumination system configured to direct light toward a surface of the substrate, and a detection system coupled to the illumination system and configured to detect light propagating from the surface of the substrate, wherein the measurement device is configured to generate one or more output signals in response to the detected light, and a control unit coupled to the measurement device and configured to determine a first property and a second property of the substrate from the one or more output signals, wherein the first property comprises a presence of macro defects on the substrate, and wherein the second property comprises overlay misregistration in the substrate.

    Abstract translation: 一种用于确定衬底的至少两个性质的系统,包括被配置为支撑衬底的支撑板以及耦合到支撑板的测量装置,包括被配置为将光引向衬底的表面的照明系统,以及检测 耦合到所述照明系统并被配置为检测从所述衬底的表面传播的光,其中所述测量装置被配置为响应于所检测到的光而产生一个或多个输出信号,以及控制单元,耦合到所述测量装置并且被配置 以从所述一个或多个输出信号确定所述衬底的第一特性和第二特性,其中所述第一特性包括所述衬底上的宏观缺陷的存在,并且其中所述第二特性包括在所述衬底中的重叠错位。

    Method and system for endpoint detection
    46.
    发明授权
    Method and system for endpoint detection 有权
    端点检测方法和系统

    公开(公告)号:US08277281B2

    公开(公告)日:2012-10-02

    申请号:US13085030

    申请日:2011-04-12

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: B05C11/1005 B24B37/013 B24B49/04 B24B49/12

    Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

    Abstract translation: 提出了一种方法和系统,用于通过处理工具监视顺序地施加到基本上相同的物品流的处理,以便在检测到对应于期望参数的预定值的终点信号时终止处理工具的操作 的被处理物品。 文章用处理工具处理。 一旦响应由在物品处理过程中持续运行的端点检测器产生的终点信号完成处理,则将综合监控应用于经处理的物品以测量所需参数的值。 分析所需参数的测量值以确定其用于调整对应于期望参数的预定值的终点信号的修正值,以终止流中下一个物品的处理。

    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES

    公开(公告)号:US20100280808A1

    公开(公告)日:2010-11-04

    申请号:US12838763

    申请日:2010-07-19

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES
    49.
    发明申请
    METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES 审中-公开
    用于测量图形结构的方法和系统

    公开(公告)号:US20100280807A1

    公开(公告)日:2010-11-04

    申请号:US12838739

    申请日:2010-07-19

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Abstract translation: 提出了一种用于确定图案化结构中的线轮廓的方法和系统,其目的在于控制该结构的制造过程。 图案化结构包括多个不同的层,结构中的图案由图案化区域和未图案化区域形成。 进行至少第一次和第二次测量,每次利用具有在一定入射角度指向结构的入射光的宽波长带的结构照明,检测从该结构返回的光的光谱特性,以及产生测量 数据代表。 分析通过第一测量获得的测量数据,从而确定结构的至少一个参数。 然后,利用该确定的参数,同时分析通过第二测量获得的测量数据,使得能够确定结构的轮廓。

    Method and system for measuring patterned structures

    公开(公告)号:US07626710B2

    公开(公告)日:2009-12-01

    申请号:US11931169

    申请日:2007-10-31

    CPC classification number: G03F7/70616 G01B11/24 G01N21/4788 G01N21/55 G03F1/84

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

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