公开(公告)号：US20180248023A1

公开(公告)日：2018-08-30

申请号：US15957702

申请日：2018-04-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Atsushi KUROKAWA

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L29/7371 ,  H01L21/30612 ,  H01L29/0684 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66318

Abstract: A bipolar transistor has a subcollector layer and a stack of collector, base, and emitter layers on the subcollector layer. On the subcollector layer are collector electrodes. On the base layer are base electrodes. The collector layer includes multiple doped layers with graded impurity concentrations, higher on the subcollector layer side and lower on the base layer side. Of these doped layers, the one having the highest impurity concentration is in contact with the subcollector layer and has a sheet resistance less than or equal to about nine times that of the subcollector layer.

公开(公告)号：US20180175181A1

公开(公告)日：2018-06-21

申请号：US15694111

申请日：2017-09-01

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Atsushi KUROKAWA

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/36 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/7371 ,  H01L21/30612 ,  H01L29/0684 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66318

Abstract: A bipolar transistor has a subcollector layer and a stack of collector, base, and emitter layers on the subcollector layer. On the subcollector layer are collector electrodes. On the base layer are base electrodes. The collector layer includes multiple doped layers with graded impurity concentrations, higher on the subcollector layer side and lower on the base layer side. Of these doped layers, the one having the highest impurity concentration is in contact with the subcollector layer and has a sheet resistance less than or equal to about nine times that of the subcollector layer.

公开(公告)号：US20140167115A1

公开(公告)日：2014-06-19

申请号：US14088510

申请日：2013-11-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Atsushi KUROKAWA

IPC: H01L29/73 ,  H01L29/66

CPC classification number: H01L29/7304 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/66242 ,  H01L29/7371 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2924/1305 ,  H01L2924/19105 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A heterojunction bipolar transistor includes a ballast resistor layer of which resistance increases with an increase in temperature. The ballast resistor layer includes a first ballast resistor sub-layer having a positive temperature coefficient of resistivity in a first temperature range and a second temperature range and a second ballast resistor sub-layer having a negative temperature coefficient of resistivity in the first temperature range and a positive temperature coefficient of resistivity in the second temperature range.

Abstract translation: 异质结双极晶体管包括电阻随温度升高而增加的镇流电阻层。 镇流电阻层包括在第一温度范围内具有正电温度系数和第二温度范围的第一镇流电阻子层和在第一温度范围内具有负电阻率温度系数的第二镇流电阻子层，以及 在第二温度范围内的正电阻率温度系数。

公开(公告)号：US20240014297A1

公开(公告)日：2024-01-11

申请号：US18474102

申请日：2023-09-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shaojun MA ,  Yasunari UMEMOTO ,  Shigeki KOYA

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/417

CPC classification number: H01L29/737 ,  H01L29/0603 ,  H01L29/41708

Abstract: A semiconductor device includes an emitter electrode above an emitter layer of a bipolar transistor. An interlayer insulating film is on the emitter electrode. An emitter contact hole is in the interlayer insulating film and is surrounded by the emitter electrode when viewed in plan view. An emitter wire is on the interlayer insulating film. The emitter wire is coupled to the emitter electrode through the emitter contact hole. When viewed in plan view, the emitter electrode and the emitter contact hole are elongated in one direction. The length of the emitter contact hole is 85% or less of the length of the emitter electrode. Of two side ends of the emitter electrode, the distance from each side end to the emitter contact hole is 5% or more of the length of the emitter electrode. This configuration further enhances the temperature uniformity in the bipolar transistor in operation.

公开(公告)号：US20220190124A1

公开(公告)日：2022-06-16

申请号：US17549566

申请日：2021-12-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shaojun MA ,  Shigeki KOYA ,  Masayuki AOIKE ,  Shinnosuke TAKAHASHI ,  Yasunari UMEMOTO ,  Masatoshi HASE

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/737 ,  H03F3/217 ,  H01L29/43

Abstract: A power amplifier that includes a substrate, and an emitter layer, a base layer, and a collector layer laminated in this order on a major surface of the substrate includes an electrical insulator provided adjacent to the emitter layer, an emitter electrode provided between the substrate and both the emitter layer and the electrical insulator, a base electrode electrically connected to the base layer, and a collector electrode electrically connected to the collector layer. The emitter electrode, the electrical insulator, and the base layer are provided between the substrate and the base electrode in a direction perpendicular to the major surface of the substrate.

公开(公告)号：US20210359114A1

公开(公告)日：2021-11-18

申请号：US17386462

申请日：2021-07-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Isao OBU ,  Kaoru IDENO ,  Shigeki KOYA

IPC: H01L29/737 ,  H01L29/423 ,  H01L29/417

Abstract: A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.

公开(公告)号：US20210320194A1

公开(公告)日：2021-10-14

申请号：US17355048

申请日：2021-06-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Takayuki TSUTSUI ,  Satoshi TANAKA

IPC: H01L29/73 ,  H01L29/205 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737 ,  H01L21/8252 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L29/66 ,  H01L27/082

Abstract: A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.

公开(公告)号：US20210305949A1

公开(公告)日：2021-09-30

申请号：US17216404

申请日：2021-03-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shaojun MA ,  Yasunari UMEMOTO ,  Kenji SASAKI

IPC: H03F3/21 ,  H01L27/06 ,  H01L49/02 ,  H01L29/205 ,  H01L29/737 ,  H01L23/66

Abstract: Multiple bipolar transistors are disposed side by side in the first direction on a substrate. Multiple first capacitance devices are provided corresponding to the respective base electrodes of the bipolar transistors. A radio frequency signal is supplied to the bipolar transistors through the first capacitance devices. Resistive devices are provided corresponding to the respective base electrodes of the bipolar transistors. A base bias is supplied to the bipolar transistors through the resistive devices. The first capacitance devices are disposed on the same side relative to the second direction orthogonal to the first direction, when viewed from the bipolar transistors. At least one of the first capacitance devices is disposed so as to overlap another first capacitance device partially when viewed in the second direction from the bipolar transistors.

公开(公告)号：US20200251579A1

公开(公告)日：2020-08-06

申请号：US16854262

申请日：2020-04-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/205 ,  H03F3/195 ,  H03F3/213 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/306 ,  H01L29/423 ,  H01L29/417 ,  H01L29/08 ,  H01L29/10 ,  H01L23/00 ,  H03F3/24 ,  H03F1/56 ,  H03F3/21

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20200219995A1

公开(公告)日：2020-07-09

申请号：US16822889

申请日：2020-03-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/08

Abstract: A collector layer of an HBT includes a high-concentration collector layer and a low-concentration collector layer thereon. The low-concentration collector layer includes a graded collector layer in which the energy band gap varies to narrow with increasing distance from the base layer. The electron affinity of the semiconductor material for the base layer is greater than that of the semiconductor material for the graded collector layer at the point of the largest energy band gap by about 0.15 eV or less. The electron velocity in the graded collector layer peaks at a certain electric field strength. In the graded collector layer, the strength of the quasi-electric field, an electric field that acts on electrons as a result of the varying energy band gap, is between about 0.3 times and about 1.8 times the peak electric field strength, the electric field strength at which the electron velocity peaks.