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公开(公告)号：US07988911B2
公开(公告)日：2011-08-02
申请号：US12939239
申请日：2010-11-04
CPC分类号： A61L2/208 , A61L2/202 , A61L2/206 , A61L9/015 , A61L2202/13
摘要： A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.
摘要翻译： 用于对暴露于气体/蒸气灭菌剂的区域进行曝气的方法和装置。 催化破坏剂和反应性化学单元用于降低该区域内气态/蒸气灭菌剂的浓度。 反应性化学单元包括与气态/蒸气灭菌剂化学反应的化学物质。 在一个实施方案中，气态/蒸气灭菌剂是蒸发的过氧化氢，并且反应性化学单元的化学性质包括硫代硫酸盐和碘化物。
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公开(公告)号：US07981757B2
公开(公告)日：2011-07-19
申请号：US12902130
申请日：2010-10-11
申请人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
发明人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
IPC分类号： H01L21/02
CPC分类号： H01L23/5223 , H01L21/76801 , H01L21/76807 , H01L21/76846 , H01L23/5227 , H01L23/5228 , H01L23/53238 , H01L28/20 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。
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公开(公告)号：US20110073988A1
公开(公告)日：2011-03-31
申请号：US12960466
申请日：2010-12-04
申请人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
发明人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
IPC分类号： H01L27/02
CPC分类号： H01L23/5223 , H01L21/76801 , H01L21/76807 , H01L21/76846 , H01L23/5227 , H01L23/5228 , H01L23/53238 , H01L28/20 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。
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44.发明申请ISOLATED METAL PLUG PROCESS FOR USE IN FABRICATING CARBON NANOTUBE MEMORY CELLS 失效用于制备碳纳米管存储器细胞的隔离金属压片方法公开(公告)号：US20100148277A1
公开(公告)日：2010-06-17
申请号：US12710477
申请日：2010-02-23
IPC分类号： H01L27/112
CPC分类号： H01H1/0094 , Y10S977/724 , Y10S977/732 , Y10S977/943
摘要： The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers. The memory cell further includes an electrode that overlies the crossbar element such that electrical signals can activate the electrode to attract or repel the crossbar element to set a memory state for the transistor.
摘要翻译： 本发明涉及制造具有纳米管横杆元件的机电存储器单元的结构和方法。 这种存储单元包括具有与晶体管电接触的接触的晶体管的衬底。 第一支撑层形成在衬底上，其开口限定了电触点上方的下腔室。 纳米管横杆元件布置成跨越下室。 第二支撑层形成有开口，所述开口限定在所述下腔室上方的顶部腔室，所述顶部腔室包括延伸超出所述下部腔室的边缘以暴露所述第一支撑层的顶部表面的一部分的延伸区域。 屋顶层覆盖顶部室的顶部，并且包括露出顶部室的延伸区域的一部分并且包括延伸到顶部层中的孔中以密封顶部和底部室的插塞的孔。 存储单元还包括覆盖在横杆元件上的电极，使得电信号可以激活电极以吸引或排斥交叉开关元件以设置晶体管的存储状态。
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公开(公告)号：US20100123193A1
公开(公告)日：2010-05-20
申请号：US12271092
申请日：2008-11-14
申请人： Peter A. Burke , Duane B. Barber , Brian Pratt
发明人： Peter A. Burke , Duane B. Barber , Brian Pratt
IPC分类号： H01L27/088 , H01L21/28
CPC分类号： H01L27/088 , H01L21/823487
摘要： A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
摘要翻译： 包括栅电极和屏蔽电极的半导体部件和制造半导体部件的方法。 半导体材料具有器件区域，栅极接触区域，端接区域和漏极接触区域。 在器件区域中形成一个或多个器件沟槽，并且在边缘端接区域中形成一个或多个端接沟槽。 屏蔽电极形成在与它们的地板相邻的器件沟槽的部分中。 在器件区域的沟槽的侧壁上形成栅极电介质材料，并且在屏蔽电极之间形成栅电极并与屏蔽电极电绝缘。 器件区域中的沟槽中的栅电极连接到栅极接触区域中的沟槽中的栅电极。 器件区域的沟槽中的屏蔽电极与端接区域中的屏蔽电极相连。
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公开(公告)号：US07670565B2
公开(公告)日：2010-03-02
申请号：US12074354
申请日：2008-03-03
IPC分类号： A61L2/20
CPC分类号： A61L2/208 , A61L2/24 , A61L9/015 , A61L2202/14 , A61L2202/25 , F24F3/16 , F24F2003/1664
摘要： When microbial contamination is introduced into a room (20*) of an enclosure, such as a building, an HVAC system including supply ductwork (16) and a return ductwork (34) is decontaminated with hydrogen peroxide vapor. A decontamination controller (46) operates controllable baffles (22) at outlet registers (20), temporary controllable baffles (44) at inlet registers (30), and a blower system (10) to circulate hydrogen peroxide vapor from hydrogen peroxide vapor generators (42) through the ductwork in both forward and reverse directions. Further, at least portions of the baffles are closed to create dwell times in which the hydrogen peroxide vapor resides in the ductwork with minimal or turbulent flow.
摘要翻译： 当将微生物污染物引入诸如建筑物的外壳的房间（20 *）中时，包括供应管道系统（16）和回流管道系统（34）的HVAC系统用过氧化氢蒸气去污。 净化控制器（46）在出口寄存器（20），入口寄存器（30）处的临时可控挡板（44）和用于使来自过氧化氢蒸汽发生器的过氧化氢蒸气循环的鼓风机系统（10）上操作可控挡板（22） 42）通过管道系统在正向和反向两个方向。 此外，挡板的至少一部分被关闭以产生停留时间，其中过氧化氢蒸汽驻留在具有最小或湍流的管道系统中。
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公开(公告)号：US20080157217A1
公开(公告)日：2008-07-03
申请号：US11618363
申请日：2006-12-29
申请人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
发明人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
CPC分类号： H01L23/5223 , H01L21/76801 , H01L21/76807 , H01L21/76846 , H01L23/5227 , H01L23/5228 , H01L23/53238 , H01L28/20 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。
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公开(公告)号：US07135142B2
公开(公告)日：2006-11-14
申请号：US10633343
申请日：2003-08-01
IPC分类号： A61L2/18
CPC分类号： C02F1/444 , A61L2/022 , A61L2/16 , A61L2/18 , C02F1/001 , C02F1/32 , C02F1/44 , C02F1/50 , C02F1/688 , C02F1/722 , C02F9/00 , C02F2301/08
摘要： A reprocessor having a circulation system for circulating a microbial deactivation fluid through a chamber that forms a part of the circulation system. The reprocessor includes a water filtration system for filtering water used in the reprocessor. The water filtration system includes a fluid feed line connectable to a source of pressurized water. A first filter and second filter elements are disposed in the fluid feed line for filtering fluids flowing therethrough. The second filter element is downstream from the first filter element and has the capacity to filter particles smaller than the first filter element. The fluid feed line forms a fluid path for water entering the reprocessor, and defines a portion of a path for microbial deactivation fluid circulated through the circulation system.
摘要翻译： 一种具有循环系统的再处理器，用于使微生物灭活流体循环通过形成循环系统的一部分的室。 再处理器包括用于过滤重新处理器中使用的水的过滤系统。 水过滤系统包括可连接到加压水源的流体供给管线。 第一过滤器和第二过滤器元件设置在流体供给管线中，用于过滤流过其中的流体。 第二过滤元件在第一过滤器元件的下游，并且具有过滤小于第一过滤元件的颗粒的能力。 流体供给管路形成用于进入再处理器的水的流体路径，并且限定通过循环系统循环的微生物去活化流体的路径的一部分。
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公开(公告)号：US07086403B2
公开(公告)日：2006-08-08
申请号：US10002442
申请日：2001-11-15
IPC分类号： A61F6/04
CPC分类号： A61F6/04 , A61F2006/048 , A61K9/0034 , Y10S128/918
摘要： A condom having a first lubricating composition containing a male genitalia desensitizing agent on the inside surface thereof and a second lubricating composition on the outside surface thereof. The first lubricating composition has a higher viscosity than the second lubricating composition so that the first lubricating composition remains on the inside surface of the condom during packaging, shipping, storage, and use.
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公开(公告)号：US06964924B1
公开(公告)日：2005-11-15
申请号：US09952790
申请日：2001-09-11
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/66 , H01L21/76 , H01L23/544
CPC分类号： H01L22/34 , H01L21/31053
摘要： A method for monitoring polishing process parameters for an integrated circuit structure on a substrate. A first metrology site is constructed on the substrate. The first metrology site represents a design extreme of a high density integrated circuit structure. The first metrology site is formed by placing a relatively small horizontal surface area trench within a relatively large surface area field of a polish stop material. A second metrology site is also constructed on the substrate. The second metrology site represents a design extreme of a low density integrated circuit structure. The second metrology site is formed by placing a relatively large horizontal surface area trench within a relatively small surface area field of a polish stop material. The substrate is covered with a layer of an insulating material, thereby at least filling the trenches. A target thickness of the insulating material necessary to leave the trenches substantially filled to a top surface of the field of polish stop material is calculated. The substrate is polished until a first thickness of the insulating material in the trench of the first metrology site is no more than the target thickness. A second thickness of the insulating material in the trench of the second metrology site is measured, and values based on the first thickness and the second thickness are monitored as the polishing process parameters for the integrated circuit structure.
摘要翻译： 一种用于监测基板上的集成电路结构的抛光工艺参数的方法。 第一个计量站点被构建在基板上。 第一个测量站点代表了高密度集成电路结构的设计极限。 第一计量站点是通过在抛光停止材料的相对大的表面区域内放置相对较小的水平表面区域沟槽而形成的。 第二个计量站点也在基板上构建。 第二个测量站点是低密度集成电路结构的设计极限。 第二计量站点通过在抛光停止材料的相对小的表面区域内放置相对较大的水平表面区域沟槽而形成。 衬底被绝缘材料层覆盖，从而至少填充沟槽。 计算出将沟槽基本上填充到抛光停止材料领域的顶表面所需的绝缘材料的目标厚度。 抛光衬底直到第一测量点的沟槽中的绝缘材料的第一厚度不超过目标厚度。 测量第二测量位置的沟槽中的绝缘材料的第二厚度，并且监测基于第一厚度和第二厚度的值作为用于集成电路结构的抛光工艺参数。
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