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公开(公告)号：US07800457B2
公开(公告)日：2010-09-21
申请号：US11950644
申请日：2007-12-05
Applicant: Mark A. Unkrich , Richard C. Ruby , Wei Pang
Inventor： Mark A. Unkrich , Richard C. Ruby , Wei Pang
IPC: H03B5/32
Abstract: A self-calibrating temperature compensated oscillator includes a monolithic structure having a first resonator, a second resonator, and a heating element to heat the first and second resonators. The temperature coefficient of the second resonator is substantially greater than the temperature coefficient of the first resonator. A first oscillator circuit operates with the first resonator and outputs a first oscillator output signal having a first oscillating frequency. A second oscillator circuit operates with the second resonator and outputs a second oscillator output signal having a second oscillating frequency. A temperature determining circuit determines the temperature of the first resonator using the second oscillating frequency. A temperature compensator provides a control signal to the first oscillator in response to the determined temperature to adjust the first oscillating frequency and maintain it at a desired operating frequency.
Abstract translation: 自校准温度补偿振荡器包括具有第一谐振器，第二谐振器和加热元件的单片结构，以加热第一和第二谐振器。 第二谐振器的温度系数基本上大于第一谐振器的温度系数。 第一振荡器电路与第一谐振器一起工作并输出具有第一振荡频率的第一振荡器输出信号。 第二振荡器电路与第二谐振器一起工作并输出具有第二振荡频率的第二振荡器输出信号。 温度确定电路使用第二振荡频率确定第一谐振器的温度。 温度补偿器响应于所确定的温度向第一振荡器提供控制信号，以调整第一振荡频率并将其保持在期望的工作频率。
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公开(公告)号：US20090273415A1
公开(公告)日：2009-11-05
申请号：US12112633
申请日：2008-04-30
Applicant: Michael L. Frank , Richard C. Ruby , Tiberiu Jamneala
Inventor： Michael L. Frank , Richard C. Ruby , Tiberiu Jamneala
IPC: H03H9/54
CPC classification number: H03H9/587 , H03H9/0095 , H03H9/132 , H03H9/583
Abstract: An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.
Abstract translation: 电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器（FBAR）。 电阻抗变压器还包括：第二FBAR，具有第二电阻抗和第二谐振频率，并且设置在第一FBAR上。 电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。 第一电阻抗与第二电阻抗不同，第一和第二谐振频率基本上相同。
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公开(公告)号：US20090146746A1
公开(公告)日：2009-06-11
申请号：US11950644
申请日：2007-12-05
Applicant: Mark A. Unkrich , Richard C. Ruby , Wei Pang
Inventor： Mark A. Unkrich , Richard C. Ruby , Wei Pang
IPC: H03L1/04
Abstract: A self-calibrating temperature compensated oscillator includes a monolithic structure having a first resonator, a second resonator, and a heating element to heat the first and second resonators. The temperature coefficient of the second resonator is substantially greater than the temperature coefficient of the first resonator. A first oscillator circuit operates with the first resonator and outputs a first oscillator output signal having a first oscillating frequency. A second oscillator circuit operates with the second resonator and outputs a second oscillator output signal having a second oscillating frequency. A temperature determining circuit determines the temperature of the first resonator using the second oscillating frequency. A temperature compensator provides a control signal to the first oscillator in response to the determined temperature to adjust the first oscillating frequency and maintain it at a desired operating frequency.
Abstract translation: 自校准温度补偿振荡器包括具有第一谐振器，第二谐振器和加热元件的单片结构，以加热第一和第二谐振器。 第二谐振器的温度系数基本上大于第一谐振器的温度系数。 第一振荡器电路与第一谐振器一起工作并输出具有第一振荡频率的第一振荡器输出信号。 第二振荡器电路与第二谐振器一起工作并输出具有第二振荡频率的第二振荡器输出信号。 温度确定电路使用第二振荡频率确定第一谐振器的温度。 温度补偿器响应于所确定的温度向第一振荡器提供控制信号，以调整第一振荡频率并将其保持在期望的工作频率。
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44.发明申请Manufacturing Process For Thin Film Bulk Acoustic Resonator (FBAR) Filters 有权薄膜体积声谐振器（FBAR）滤波器的制造工艺公开(公告)号：US20090146531A1
公开(公告)日：2009-06-11
申请号：US11748970
申请日：2007-05-15
Applicant: Richard C. Ruby , John D. Larson , Paul D. Bradley
Inventor： Richard C. Ruby , John D. Larson , Paul D. Bradley
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02149 , H03H2003/0471 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.
Abstract translation: 在具有顶面的基板上制造声学谐振器的方法。 首先，产生上表面的凹陷。 接下来，凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来，在所述上表面上沉积第一电极。 然后，在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。
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45.发明申请ELECTRONIC DEVICE ON SUBSTRATE WITH CAVITY AND MITIGATED PARASITIC LEAKAGE PATH 失效具有密封性和缓解性的PARASIIC泄漏路径的基板上的电子器件公开(公告)号：US20090101999A1
公开(公告)日：2009-04-23
申请号：US12341122
申请日：2008-12-22
Applicant: R. Shane Fazzio , Richard C. Ruby , Christopher P. Wade , Michael Louis Frank , David A. Feld
Inventor： R. Shane Fazzio , Richard C. Ruby , Christopher P. Wade , Michael Louis Frank , David A. Feld
IPC: H01L29/78
CPC classification number: H03H9/02118 , H03H3/02 , H03H9/02125 , H03H9/172
Abstract: An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.
Abstract translation: 电子设备。 电子器件包括第一电极和涂层。 电子器件制造在衬底上; 衬底具有在衬底的顶表面中产生的空腔; 并且第一电极电耦合到衬底。 涂层涂覆在空腔中的基底表面的至少一部分，并且涂层的存在导致在第一电极和在基底上制造的附加电极之间的至少一个寄生泄漏路径的减轻。
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Patent Agency Ranking
公开(公告)号：US07436269B2
公开(公告)日：2008-10-14
申请号：US11109596
申请日：2005-04-18
Applicant: Kun Wang , Paul D. Bradley , Richard C. Ruby
Inventor： Kun Wang , Paul D. Bradley , Richard C. Ruby
CPC classification number: H03H9/587 , H03H3/02 , H03H7/1708 , H03H9/0095 , H03H9/0571 , H03H9/583 , H03H9/584 , H03H9/706 , H03H2003/0428 , Y10T29/49002
Abstract: An apparatus includes a substrate with a cavity and a two-stage resonator filter fabricated over the cavity. The two-stage resonator filter includes a first stage and a second stage. The first stage includes a first resonator and a second resonator, the second resonator acoustically coupled to the first resonator. The second stage includes a third resonator and a fourth resonator, the fourth resonator acoustically coupled to the third resonator. The second resonator and the third resonators are electrically coupled. A decoupling layer couples the first resonator and the second resonator. The decoupling layer extends between the third resonator and the fourth resonator. The first resonator and the fourth resonator are above the substrate. The decoupling layer is above the first resonator and the fourth resonator. The second resonator and the third resonators are above the decoupling layer.
Abstract translation: 一种装置包括具有空腔的衬底和在空腔上制造的两级谐振器滤波器。 两级谐振滤波器包括第一级和第二级。 第一级包括第一谐振器和第二谐振器，第二谐振器声耦合到第一谐振器。 第二级包括第三谐振器和第四谐振器，第四谐振器声耦合到第三谐振器。 第二谐振器和第三谐振器电耦合。 去耦层耦合第一谐振器和第二谐振器。 解耦层在第三谐振器和第四谐振器之间延伸。 第一谐振器和第四谐振器在衬底之上。 去耦层位于第一谐振器和第四谐振器之上。 第二谐振器和第三谐振器在去耦层之上。
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公开(公告)号：US07161448B2
公开(公告)日：2007-01-09
申请号：US10867540
申请日：2004-06-14
Applicant: Hongiun Feng , Ronald S. Fazzio , Paul D. Bradley , Richard C. Ruby
Inventor： Hongiun Feng , Ronald S. Fazzio , Paul D. Bradley , Richard C. Ruby
CPC classification number: H03H9/02118 , H03H9/02149 , H03H9/173
Abstract: An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.
Abstract translation: 声谐振器包括基板，第一电极，压电材料层，第二电极和凹陷区域。 衬底具有第一表面。 第一电极邻近衬底的第一表面。 压电材料层与第一电极相邻。 第二电极与压电材料层相邻。 第二电极具有形状为多边形的第二电极周边。 凹陷区域与第二电极相邻。 凹陷区域具有限定凹陷区域周边的形状。 凹陷区域周边相对于第二电极周边凹进。
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48.发明授权公开(公告)号：US06710508B2
公开(公告)日：2004-03-23
申请号：US09996951
申请日：2001-11-27
Applicant: Richard C. Ruby , Joe Qingzhe Wen
Inventor： Richard C. Ruby , Joe Qingzhe Wen
IPC: H01L4108
CPC classification number: H03H3/04
Abstract: In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.
Abstract translation: 在声谐振器阵列中，谐振器的谐振频率被调整和稳定，以便实现阵列的目标频率响应。 调节方法是通过在升高的温度下有意识地引起氧化来实现的。 热氧化在电极 - 压电堆叠的顶部电极的表面上生长氧化钼层，从而增加电极层与压电层的相对厚度。 在一个实施例中，当顶部电极层相对于压电层增加时，FBAR的谐振频率向下调节。 在另一个实施方案中，稳定方法是通过在升高的温度下有意地诱导氧化来实现的。
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公开(公告)号：US5873153A
公开(公告)日：1999-02-23
申请号：US703716
申请日：1996-08-27
Applicant: Richard C. Ruby , Paul Philip Merchant
Inventor： Richard C. Ruby , Paul Philip Merchant
CPC classification number: H03H9/174 , H03H3/04 , H03H9/02133 , H03H9/02236 , H03H9/583 , H03H9/588 , H03H2009/02181 , Y10T29/42
Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si.sub.3 N.sub.4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.
Abstract translation: 包括夹着PZ层的顶部和底部电极的声学谐振器。 可以通过利用声谐振器中包含的加热元件和/或通过调节调谐层的厚度来调整声学谐振器的共振频率。 在本发明的优选实施例中，电极包括Mo层。 本发明的一个实施方案构造在Si 3 N 4膜上。 本发明的第二实施例构造成使得其悬挂在金属柱上的基板上。 在本发明的优选实施例中，通过使电极中的应力最小化的方法来沉积电极。
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公开(公告)号：US5552370A
公开(公告)日：1996-09-03
申请号：US182884
申请日：1994-01-18
Applicant: John T. Anderson , V. K. Nagesh , Richard C. Ruby
Inventor： John T. Anderson , V. K. Nagesh , Richard C. Ruby
CPC classification number: H01L39/2419 , C01G3/006 , C04B35/45 , H01L39/2429 , C01P2004/61 , C01P2004/80 , Y10S505/741 , Y10S505/78 , Y10S505/785 , Y10S505/818 , Y10T428/2991
Abstract: A method for making metal/ceramic superconductor thick film structures including the steps of preparing a silver/superconductor ink, applying the ink to a substrate, evaporating the ink's binder, decomposing a silver compound in the residue to coat the superconductor grains, sintering the coated superconductor grains, and oxygenating the superconductor grains through the silver coating. The resultant inter-granular silver increases the critical current and mechanical strength of the superconductor.
Abstract translation: 一种制造金属/陶瓷超导体厚膜结构的方法，包括以下步骤：制备银/超导体油墨，将油墨施加到基材上，蒸发油墨粘合剂，分解残留物中的银化合物以涂覆超导体颗粒，烧结涂覆 超导体晶粒，并通过银涂层对超导体晶粒进行氧化。 所产生的颗粒间银增加了超导体的临界电流和机械强度。
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