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70 条记录 (耗时 0.018 秒)

    Process for depositing a superconducting thin film
    3.
    发明授权
    Process for depositing a superconducting thin film 失效
    沉积超薄膜的工艺

    公开(公告)号：US5057201A

    公开(公告)日：1991-10-15

    申请号：US462983

    申请日：1990-01-10

    申请人： Nobuhiko Fujita ,  Naoji Fujimori ,  Hideo Itozaki ,  Saburo Tanaka ,  Keizo Harada ,  Tetsuji Jodai

    发明人： Nobuhiko Fujita ,  Naoji Fujimori ,  Hideo Itozaki ,  Saburo Tanaka ,  Keizo Harada ,  Tetsuji Jodai

    IPC分类号： C04B35/45 ,  C23C14/08 ,  C23C14/34 ,  C23C14/40 ,  H01L39/24

    CPC分类号： C23C14/3414 ,  C04B35/4504 ,  C23C14/087 ,  H01L39/2435 ,  Y10S505/816 ,  Y10S505/818 ,  Y10S505/819

    摘要： This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 5.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr and at a partial pressure of O.sub.2 ranging from 0.5.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr. The obtained thin film may be further heat-treated at a temperature ranging from 250.degree. C. to 1,700.degree. C., preferably from 250.degree. C. to 1,200.degree. C.

    Method of forming a barrier layer arrangement for conductive layers on silicon substrates
    4.
    发明授权
    Method of forming a barrier layer arrangement for conductive layers on silicon substrates 失效
    在硅衬底上形成用于导电层的阻挡层布置的方法

    公开(公告)号：US4994434A

    公开(公告)日：1991-02-19

    申请号：US326813

    申请日：1989-03-21

    申请人： Liang-Sun Hung ,  John A. Agostinelli

    发明人： Liang-Sun Hung ,  John A. Agostinelli

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2461 ,  Y10S505/73 ,  Y10S505/739 ,  Y10S505/817 ,  Y10S505/818 ,  Y10S505/826 ,  Y10S505/832 ,  Y10S505/92

    摘要： A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

    摘要翻译： 公开了一种在晶体硅衬底上制备能够保护稀土类碱土铜氧化物导电涂层与衬底直接相互作用的阻挡层三元组的方法。 将厚度至少为2000的二氧化硅层沉积在硅衬底上，随后沉积在第4组重金属的二氧化硅层上，以形成厚度在1500至3000范围内的层。 在没有反应气氛的情况下加热层以允许氧从二氧化硅层迁移形成由位于硅衬底附近的二氧化硅第一三元组构成的阻挡层三元组，远离硅衬底的重的第4族金属氧化物第三三电极层 以及插入在第一和第三三单层之间的第4族重金属硅化物第二三单元组层。

    Catalytic oxidation of solid materials
    5.
    发明授权
    Catalytic oxidation of solid materials 失效
    固体材料的催化氧化

    公开(公告)号：US4526629A

    公开(公告)日：1985-07-02

    申请号：US610355

    申请日：1984-05-15

    申请人： Ernst-Eberhard Latta ,  Maria Ronay

    发明人： Ernst-Eberhard Latta ,  Maria Ronay

    IPC分类号： C01G33/00 ,  B01J23/00 ,  B01J23/10 ,  C01B13/14 ,  C01B13/32 ,  C01G1/00 ,  C23C8/10 ,  C23C8/12 ,  H01L21/316 ,  H01L39/24 ,  H01L21/363

    CPC分类号： C23C8/12 ,  C23C8/10 ,  H01L21/31683 ,  H01L39/2493 ,  Y10S148/016 ,  Y10S148/089 ,  Y10S148/117 ,  Y10S148/118 ,  Y10S505/818

    摘要： One or more monolayers of cerium arrayed on the surface of a niobium metal acts as a catalyst to oxidation of the niobium at ambient temperature and results in a very thin, very high quality insulating layer which may be configured by patterning of the catalyst. Significant amounts of Nb.sub.2 O.sub.5 are formed at pressures as low as 6.6.times.10.sup.-6 Pa, promoted by the presence of the cerium. This catalytic activity is related to the trivalent to tetravalent valence change of the cerium during oxidation. The kinetics of Nb.sub.2 O.sub.5 formation beneath the oxidized cerium shows two stages:the first stage is fast growth limited by ion diffusion;the second stage is slow growth limited by electron tunneling.Other catalytic rare earths usable instead of cerium are terbium and praseodymium; other substrate materials usable instead of niobium are aluminum, hafnium, silicon and tantalum, or oxidizable alloys thereof.

    摘要翻译： 排列在铌金属表面上的一个或多个铈单层作为催化剂在环境温度下氧化铌，并产生非常薄的，非常高质量的绝缘层，其可以通过图案化催化剂来构造。 在铈的存在促进下，在低至6.6×10 -6 Pa的压力下形成显着量的Nb 2 O 5。 该催化活性与氧化期间铈的三价至四价的价态变化有关。 氧化铈下形成的Nb2O5的动力学分为两个阶段：第一阶段是离子扩散限制的快速生长; 第二阶段是受电子隧道效应限制的缓慢增长。 其他可用于代替铈的催化稀土是铽和镨; 可用于代替铌的其它基板材料是铝，铪，硅和钽，或其可氧化的合金。

    Method for producing eutectics as thin films using an arc lamp, as a heat source in a line heater
    6.
    发明授权
    Method for producing eutectics as thin films using an arc lamp, as a heat source in a line heater 失效
    使用弧光灯作为线状加热器的热源制造作为薄膜的共晶体的方法

    公开(公告)号：US4498925A

    公开(公告)日：1985-02-12

    申请号：US557998

    申请日：1983-12-05

    申请人： Harvey E. Cline

    发明人： Harvey E. Cline

    IPC分类号： C23C26/02 ,  C30B21/04 ,  C22B9/00 ,  C22B61/00

    CPC分类号： C23C26/02 ,  C30B21/04 ,  Y10S505/818 ,  Y10T428/12458

    摘要： A method for the preparation of aligned eutectics as thin films is provided. The components of the eutectic are deposited in overlying planar layers on a suitable substrate to form a preform and a molten zone, having predetermined characteristics, is established and caused to traverse the preform melting and intermixing the deposited layers leaving the solidified thin film eutectic in its path.

    摘要翻译： 提供了制备作为薄膜的对准共晶体的方法。 共晶体的组分沉积在合适的衬底上的覆盖的平面层上以形成预成型体，并且建立具有预定特性的熔融区，并使其穿过预成型体熔融和混合沉积的层，使沉积的层离开固化的薄膜共晶 路径。

    Method for producing eutectics as thin films using a line heater
    7.
    发明授权
    Method for producing eutectics as thin films using a line heater 失效
    使用线加热器制造薄膜的方法

    公开(公告)号：US4498924A

    公开(公告)日：1985-02-12

    申请号：US557997

    申请日：1983-12-05

    申请人： Harvey E. Cline

    发明人： Harvey E. Cline

    IPC分类号： C23C26/02 ,  C30B21/04 ,  C22B9/00 ,  C22B61/00

    CPC分类号： C23C26/02 ,  C30B21/04 ,  Y10S505/818 ,  Y10T428/12458

    摘要： A method for the preparation of aligned eutectics as thin films is provided. The components of the eutectic are deposited in overlying planar layers on a suitable substrate to form a preform and a molten zone, having predetermined characteristics, is established and caused to traverse the preform melting and intermixing the deposited layers leaving the solidified thin film eutectic in its path.

    摘要翻译： 提供了制备作为薄膜的对准共晶体的方法。 共晶体的组分沉积在合适的衬底上的覆盖的平面层上以形成预成型体，并且建立具有预定特性的熔融区，并使其穿过预成型体熔融和混合沉积的层，使沉积的层离开固化的薄膜共晶 路径。