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41.发明申请公开(公告)号：US20190131541A1
公开(公告)日：2019-05-02
申请号：US16176422
申请日：2018-10-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taejin Choi , Sang Mo Kim , Sung Young Yun , Youn Hee Lim , Katsunori Shibata , Hiromasa Shibuya , Gae Hwang Lee , Norihito Ishii , Dong-Seok Leem , Yong Wan Jin , Yeong Suk Choi , Jong Won Choi , Hyesung Choi
IPC: H01L51/00 , H01L27/30 , C07D293/10 , C07D421/04 , C07C225/22 , C07D333/46
Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
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公开(公告)号：US10212367B2
公开(公告)日：2019-02-19
申请号：US15435397
申请日：2017-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Hee Lee , Young Gu Jin , Yong Wan Jin
Abstract: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.
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公开(公告)号：US10008545B2
公开(公告)日：2018-06-26
申请号：US15156438
申请日：2016-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang Lee , Sung Young Yun , Yong Wan Jin
CPC classification number: H01L27/307 , H01L51/0046 , H01L51/0053 , H01L51/006 , H01L51/0061 , H01L51/0062 , H01L51/4253 , H01L51/441 , Y02E10/549
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).
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公开(公告)号：US20180175114A1
公开(公告)日：2018-06-21
申请号：US15843364
申请日：2017-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Hee LEE , Gae Hwang Lee , Dong-Seok Leem , Yong Wan Jin
CPC classification number: H01L27/307 , H01L27/1461 , H01L27/14621 , H01L27/1464 , H01L27/14647 , H04N5/374 , H04N5/378 , H04N9/045 , H04N9/07 , H04N2209/042
Abstract: An image sensor may include an organic photo-sensing device configured to selectively sense first visible light and a photo-sensing device array including a first photo-sensing device configured to selectively sense second visible light, a second photo-sensing device configured to selectively sense third visible light, and a third photo-sensing device configured to selectively sense mixed light of the second visible light and the third visible light. The image sensor may include a color filter array including a first color filter configured to selectively transmit the second visible light, a second color filter configured to selectively transmit the third visible light, and a third color filter configured to transmit mixed light of the second visible light and the third visible light. At least the first photo-sensing device and the second photo-sensing device may be at different depths in a substrate and may be laterally offset from each other.
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公开(公告)号：US10002898B2
公开(公告)日：2018-06-19
申请号：US15160288
申请日：2016-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang Lee , Seon-Jeong Lim , Yong Wan Jin
IPC: H01L27/146 , H01L27/30 , H01L31/101
CPC classification number: H01L27/14621 , H01L27/14643 , H01L27/14647 , H01L27/302 , H01L27/307 , H01L31/101 , H01L31/1013
Abstract: An image sensor includes a first light detecting device configured to selectively sense or absorb first visible light, a second light detecting device configured to selectively sense or absorb second visible light having a longer wavelength region than the first visible light, and a third light detecting device on the first light detecting device and the second light detecting device. The first light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength less than about 440 nm, the second light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength greater than about 630 nm, and the third light detecting device is configured to selectively sense or absorb third visible light having a wavelength region between the first visible light and the second visible light.
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Patent Agency Ranking
公开(公告)号：US09997718B2
公开(公告)日：2018-06-12
申请号：US15008076
申请日：2016-01-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sakurai Rie , Yong Wan Jin , Sung Young Yun , Gae Hwang Lee , Kwang Hee Lee , Dong-Seok Leem , Bulliard Xavier , Tadao Yagi
CPC classification number: H01L51/0071 , C07D495/22 , C09K11/06 , H01L27/307 , H01L51/0051 , H01L51/0053 , H01L51/006 , H01L51/0061 , H01L51/0078 , H01L51/4253 , H01L2251/308 , H05B33/14
Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including an n-type semiconductor compound represented by Chemical Formula 1 and a p-type semiconductor compound having selective light absorption in a green wavelength region of about 500 nm to about 600 nm.
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公开(公告)号：US20180114814A1
公开(公告)日：2018-04-26
申请号：US15478580
申请日：2017-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Young YUN , Gae Hwang Lee , Kyung Bae Park , Kwang Hee Lee , Dong-Seok Leem , Xavier Bulliard , Yong Wan Jin
CPC classification number: H01L27/307 , H01L27/3209 , H01L27/3211 , H01L27/322 , H01L51/0046 , H01L51/0058 , H01L51/006 , H01L51/0061 , H01L51/0062 , H01L51/0072 , H01L51/4253 , H01L2251/308
Abstract: A photoelectric device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and including a light absorbing material configured to selectively absorb first visible light including one of visible light in a blue wavelength region of greater than or equal to about 380 nm and less than about 500 nm, visible light in a green wavelength region of about 500 nm to about 600 nm, and visible light in a red wavelength region of greater than about 600 nm and less than or equal to about 700 nm, and a plurality of nanostructures between the first electrode and the photoelectric conversion layer and configured to selectively reflect the first visible light.
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公开(公告)号：US09911920B2
公开(公告)日：2018-03-06
申请号：US14597050
申请日：2015-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xavier Bulliard , Tadao Yagi , Rie Sakurai , Kwang Hee Lee , Dong-Seok Leem , Hyesung Choi , Seon-Jeong Lim , Yong Wan Jin
IPC: H01L51/00 , H01L27/30 , C07D495/14 , H01L51/42
CPC classification number: H01L51/0058 , C07D495/14 , H01L27/307 , H01L51/0052 , H01L51/0067 , H01L51/0069 , H01L51/0074 , H01L51/424
Abstract: A compound is represented by Chemical Formula 1: X1-T-X2 wherein T is a substituted or unsubstituted fused thiophene moiety, and each of X1 and X2 are independently an organic group including an alkenylene group and an electron withdrawing group.
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公开(公告)号：US09716120B2
公开(公告)日：2017-07-25
申请号：US15283743
申请日：2016-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Wan Jin , Kwang Hee Lee , Gae Hwang Lee , Kyung Bae Park , Dong-Seok Leem , Yeong Suk Choi
IPC: H01L31/00 , H01L27/146
CPC classification number: H01L27/146 , H01L27/14647 , H01L27/14692
Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
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公开(公告)号：US09548337B2
公开(公告)日：2017-01-17
申请号：US14631438
申请日：2015-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang Lee , Kwang Hee Lee , Dong-Seok Leem , Yong Wan Jin
IPC: H01L27/30 , H01L51/44 , H01L27/146
CPC classification number: H01L27/307 , H01L27/14625 , H01L27/14632 , H01L27/14647 , H01L51/441
Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein a single nanopattern of the plurality of nanopatterns corresponds to a single photo-sensing device in the plurality of photo-sensing devices.
Abstract translation: 一种图像传感器，包括与多个感光装置集成的半导体衬底和半导体衬底上的纳米图案层，所述纳米图案层具有多个纳米图案，其中所述多个纳米图案中的单个纳米图案对应于单个光感测 装置在多个感光装置中。
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