Communication Method and Communication System
    41.
    发明申请
    Communication Method and Communication System 审中-公开
    通信方法与通信系统

    公开(公告)号:US20170061173A1

    公开(公告)日:2017-03-02

    申请号:US15342520

    申请日:2016-11-03

    CPC classification number: G06K7/10158 G06K7/10366 G08C17/00

    Abstract: A command sequence is restarted from the middle even when supply of power supply voltage to an internal circuit in a wireless tag is temporarily stopped (a power flicker occurs). A register or a cache memory included in a signal processing circuit in the wireless tag continues to retain data even after the supply of power supply voltage is stopped. After the power flicker occurs, the signal processing circuit in the wireless tag is returned to the state before the supply of power supply voltage is stopped and can restart signal processing. Consequently, the command sequence can be restarted from the middle.

    Abstract translation: 即使暂时停止向无线标签中的内部电路供电电源(发生电源闪烁),也从中间重新启动命令序列。 包括在无线标签中的信号处理电路中的寄存器或高速缓冲存储器即使在停止供电电压之后也继续保留数据。 在发生电源闪烁之后,无线标签中的信号处理电路返回到电源电压停止之前的状态,并且可以重启信号处理。 因此,可以从中间重新启动命令序列。

    SEMICONDUCTOR DEVICE
    42.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150129873A1

    公开(公告)日:2015-05-14

    申请号:US14598384

    申请日:2015-01-16

    Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.

    Abstract translation: 提供在绝缘区域上方设置有在第一半导体区域和第二半导体区域上设置绝缘区域的衬底上的第一场效应晶体管; 设置在所述基板上的绝缘层; 第二场效应晶体管,其设置在所述绝缘层的一个平面上,并且包括氧化物半导体层; 并提供控制终端。 控制端子以与第二场效应晶体管的源极和漏极相同的步骤形成,并且用于控制第一场效应晶体管的阈值电压的电压被提供给控制端子。

    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE

    公开(公告)号:US20250157404A1

    公开(公告)日:2025-05-15

    申请号:US19021338

    申请日:2025-01-15

    Abstract: The invention of the application is the invention regarding a semiconductor device and a method for driving the semiconductor device. The semiconductor device includes first and second transistors, first to fifth switches, first to third capacitors, and a display element. The first transistor (M2) comprises a back gate, a gate of the first transistor is electrically connected to the first switch (M1), the second switch (M3) and the first capacitor (C1) are positioned between the gate of the first transistor and a source of the first transistor, the back gate of the first transistor is electrically connected to the third switch (M4), the second capacitor (C2) is positioned between the back gate of the first transistor and the source of the first transistor, the source of the first transistor is electrically connected to the fourth switch (M6) and a drain of the second transistor (M5), a gate of the second transistor is electrically connected to the fifth switch (M7), the third capacitor (C3) is positioned between the gate of the second transistor and a source of the second transistor, and the source of the second transistor is electrically connected to the display element (61).

    SEMICONDUCTOR DEVICE
    44.
    发明申请

    公开(公告)号:US20250150083A1

    公开(公告)日:2025-05-08

    申请号:US19018549

    申请日:2025-01-13

    Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

    DISPLAY APPARATUS AND ELECTRONIC DEVICE

    公开(公告)号:US20250040397A1

    公开(公告)日:2025-01-30

    申请号:US18704237

    申请日:2022-10-31

    Abstract: An object of the present invention is to provide a display apparatus that reduces the amount of image data transmitted and maintains high-level display quality, which is a display apparatus (Dp) including a display portion (DIS), a light-emitting portion (SHB), and a light-receiving portion (SJB). The display portion includes a first display region (ALP) and a first circuit region that overlap with each other. The first display region includes a plurality of first display pixels and the first circuit region includes a first driver circuit (DRV). The first driver circuit is electrically connected to the plurality of first display pixels through a plurality of first wirings extended in the first display region. The light-emitting portion has a function of emitting first light, and the light-receiving portion has a function of receiving second light that is reflected by irradiation of an object with the first light and a function of generating information based on the second light. The first driver circuit has a function of, in accordance with the information, one of transmitting a plurality of image signals to the plurality of first wirings and transmitting the same image signal to two or more consecutive adjacent wirings among the plurality of first wirings.

    DISPLAY APPARATUS
    46.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240196650A1

    公开(公告)日:2024-06-13

    申请号:US18287928

    申请日:2022-04-20

    CPC classification number: H10K59/1213 H10K59/131

    Abstract: A novel display apparatus is provided. The display apparatus includes a first wiring, a second wiring, a first transistor, and a plurality of second transistors. The first wiring extends in a first direction and is supplied with a gate signal. The second wiring extends in a second direction intersecting the first direction and is supplied with a source signal. A gate of the first transistor is electrically connected to the first wiring, one of a source and a drain of the first transistor is electrically connected to the second wiring, and the other of the source and the drain of the first transistor is electrically connected to each gate of the plurality of second transistors. The plurality of second transistors are connected in series or in parallel. The first transistor includes a first semiconductor layer in which current flows in the first direction or the second direction.

    Control Circuit And Electronic Device
    47.
    发明公开

    公开(公告)号:US20230336006A1

    公开(公告)日:2023-10-19

    申请号:US18026910

    申请日:2021-09-13

    CPC classification number: H02J7/0014 H02J7/00302 H02J7/00306

    Abstract: A protection circuit and a control circuit of a secondary battery are provided, for example. A circuit with low power consumption is provided. A circuit with a high degree of integration is provided. The control circuit includes a first resistance circuit, a second resistance circuit, a comparator, and a memory circuit. One terminal of the first resistance circuit is electrically connected to a positive electrode of a secondary battery; the other terminal of the first resistance circuit is electrically connected to a first input terminal of the comparator and one terminal of the second resistance circuit; the memory circuit has a function of retaining first data; the control circuit has a function of generating a first signal and a second signal by using the first data, a function of adjusting the resistance of the first resistance circuit by supplying the first signal to the first resistance circuit, a function of adjusting the resistance of the second resistance circuit by supplying the second signal to the second resistance circuit, and a function of stopping one of charging and discharging of the secondary battery in accordance with output from the comparator; and the memory circuit includes a capacitor that includes a ferroelectric layer as a dielectric layer.

    SEMICONDUCTOR DEVICE, IMAGING DEVICE, AND DISPLAY DEVICE

    公开(公告)号:US20220394202A1

    公开(公告)日:2022-12-08

    申请号:US17441733

    申请日:2021-02-17

    Abstract: The reading accuracy of an imaging device is increased. Clear image capturing is performed even in the case where the luminance is high. A reading circuit of the imaging device includes an amplifier portion and a conversion portion. The amplifier portion amplifies a potential difference between a first signal and a second signal that are sequentially input and outputs the amplified difference to the conversion portion. The conversion portion converts the output potential of the amplifier portion into a digital value. The amplifier portion is reset on the basis of a first reference potential and the first signal and amplifies the potential difference on the basis of a second reference potential that is different from the first reference potential and the second signal.

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