公开(公告)号：US20160013324A1

公开(公告)日：2016-01-14

申请号：US14861289

申请日：2015-09-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Abstract translation: 抑制了包括作为半导体膜的氧化物半导体的晶体管上的层间绝缘膜的半导体器件的电特性的变化。 该结构包括第一绝缘膜，其包括在半导体膜上方的由源电极和漏极形成的阶梯区域中的空隙部分，并且包含氧化硅作为部件，并且包含氮化硅的第二绝缘膜，其设置在 与第一绝缘膜接触以覆盖第一绝缘膜中的空隙部分。 该结构可以防止第一绝缘膜中产生的空隙部向外扩展。

公开(公告)号：US20140332808A1

公开(公告)日：2014-11-13

申请号：US14445491

申请日：2014-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Katsuaki TOCHIBAYASHI ,  Satoshi HIGANO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/22

CPC classification number: H01L29/66969 ,  H01L29/22 ,  H01L29/7869

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

Abstract translation: 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 在包含作为沟道保护膜的绝缘层设置在氧化物半导体膜上的底栅晶体管的半导体器件中，可以防止包含在蚀刻气体中的元素作为杂质残留在氧化物半导体膜的表面上 通过在形成设置在氧化物半导体膜上并与氧化物半导体膜接触并且/或形成源极和漏极电极层的绝缘层之后进行杂质去除处理。 氧化物半导体膜表面的杂质浓度低于或等于5×1018原子/ cm3，优选为1×1018原子/ cm3以下。

公开(公告)号：US20240222510A1

公开(公告)日：2024-07-04

申请号：US18600901

申请日：2024-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/12 ,  H01L27/146 ,  H01L27/15 ,  H01L29/66 ,  H10K59/121 ,  H10K59/124

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/66742 ,  H01L29/7869 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/14612 ,  H01L27/15 ,  H10K59/1213 ,  H10K59/124

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20220271169A1

公开(公告)日：2022-08-25

申请号：US17667655

申请日：2022-02-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Hiroki KOMAGATA ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC: H01L29/786

Abstract: A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US20220077317A1

公开(公告)日：2022-03-10

申请号：US17414490

申请日：2019-11-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI ,  Tsutomu MURAKAWA ,  Erika TAKAHASHI

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.

公开(公告)号：US20210057582A1

公开(公告)日：2021-02-25

申请号：US16897586

申请日：2020-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/146

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20200381556A1

公开(公告)日：2020-12-03

申请号：US16766425

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Hiroki KOMAGATA ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC: H01L29/786

Abstract: A semiconductor device having a high on-state current is provided.The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US20200321360A1

公开(公告)日：2020-10-08

申请号：US16876286

申请日：2020-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Tomoaki MORIWAKA ,  Jiro NISHIDA ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/84 ,  H01L23/522 ,  H01L27/13

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US20180158956A1

公开(公告)日：2018-06-07

申请号：US15872154

申请日：2018-01-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/15 ,  H01L27/32 ,  H01L27/146

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20180013004A1

公开(公告)日：2018-01-11

申请号：US15696231

申请日：2017-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Takashi HAMADA ,  Akihisa SHIMOMURA ,  Satoru OKAMOTO ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L21/4763 ,  H01L21/4757 ,  H01L29/66 ,  H01L21/465

CPC classification number: H01L29/7869 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.