公开(公告)号：US12068336B2

公开(公告)日：2024-08-20

申请号：US17469217

申请日：2021-09-08

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Jin Jeon ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Yun Yong Nam ,  Jun Hyung Lim

IPC: H01L27/12 ,  G02F1/1362 ,  H01L25/16

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  H01L25/167 ,  H01L27/124 ,  H01L27/1248

Abstract: A display device and a method of manufacturing a display device are provided. The display device includes a first conductive layer on a substrate, a passivation layer disposed on the first conductive layer and exposing at least a part of the first conductive layer, a second conductive layer disposed on the passivation layer and covering an upper surface of the passivation layer, a via layer on the second conductive layer, a third conductive layer including a first electrode, a second electrode, and a connection pattern, and spaced apart from each other on the via layer, and a light emitting element having ends that are disposed on the first electrode and the second electrode, respectively. The connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer.

公开(公告)号：US11825703B2

公开(公告)日：2023-11-21

申请号：US17242303

申请日：2021-04-28

Applicant: Samsung Display Co., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Yeon Hong Kim ,  Kyoung Seok Son ,  Sun Hee Lee ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/00 ,  H01L29/00 ,  H10K59/124 ,  H10K59/131 ,  H10K59/12 ,  H01L29/786 ,  H01L27/12

CPC classification number: H10K59/124 ,  H10K59/131 ,  H01L27/1222 ,  H01L29/786 ,  H10K59/1201

Abstract: A display device includes a substrate, a first transistor including a channel on the substrate, a first electrode and a second electrode, and a gate electrode overlapping the channel of the first transistor, a first interlayer insulation layer on the first and second electrodes of the first transistor, a second transistor including a channel disposed on the first interlayer insulation layer, a first electrode and a second electrode of the second transistor, and a gate electrode that overlaps the channel of the second transistor, a first connection electrode disposed on the first interlayer insulation layer, and connected with the first electrode of the first transistor, a gate insulation layer disposed between the first interlayer insulation layer and the first connection electrode, and a second connection electrode that connects the first connection electrode and the first electrode of the second transistor.

公开(公告)号：US11798498B2

公开(公告)日：2023-10-24

申请号：US17887901

申请日：2022-08-15

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok Park ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L29/786 ,  H01L27/12 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K59/12 ,  H10K102/10

CPC classification number: G09G3/3291 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/00 ,  H10K59/1201 ,  H10K2102/102 ,  H10K2102/103

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US11751439B2

公开(公告)日：2023-09-05

申请号：US17220966

申请日：2021-04-02

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun Kim ,  So Young Koo ,  Eok Su Kim ,  Yun Yong Nam ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H01L27/12 ,  H01L29/786 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/126 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/00 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/7869 ,  H01L29/78633 ,  H10K59/1201

Abstract: A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.

公开(公告)号：US11706954B2

公开(公告)日：2023-07-18

申请号：US17002113

申请日：2020-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Myeong Ho Kim ,  Jay Bum Kim ,  Kyoung Seok Son ,  Sun Hee Lee ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/32 ,  H10K59/124 ,  H10K59/122 ,  H10K59/126 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/122 ,  H10K59/126 ,  H10K59/1201

Abstract: A display device includes a substrate, a first semiconductor pattern on the substrate and including a semiconductor layer of a first transistor, a first gate insulator on the substrate, a first conductive layer on the first gate insulator and including a first gate electrode of the first transistor and a first electrode of the capacitor connected to the first gate electrode of the first transistor, a first interlayer dielectric on the first gate insulator, a second semiconductor pattern on the first interlayer dielectric and including a semiconductor layer of a second transistor and a second electrode of the capacitor, a second gate insulator on the first interlayer dielectric, a second conductive layer on the second gate insulator and including a gate electrode of the second transistor and a third semiconductor pattern between the second semiconductor pattern and any one of the first conductive layer and the second conductive layer.

公开(公告)号：US11610541B1

公开(公告)日：2023-03-21

申请号：US17810031

申请日：2022-06-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: G09G3/32

Abstract: A pixel includes a light emitting element, first through third transistors, sixth through seventh transistors, a ninth transistor, and a capacitor. The first transistor is connected between supply and a second node and controls a driving current supplied to the light emitting element. The second transistor is connected between a third node and a data line. The third transistor is connected between a first node connected to a gate electrode of the first transistor and the second node. The sixth transistor is connected between the supply and a fifth node connected to an electrode of the first transistor. The seventh transistor is connected between the second node and a fourth node connected to an anode of the light emitting element. The ninth transistor is connected between the fifth node and bias. Gate electrodes of the sixth through seventh transistors and the ninth transistor are connected to a same emission line.

公开(公告)号：US20220398983A1

公开(公告)日：2022-12-15

申请号：US17887901

申请日：2022-08-15

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok PARK ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L27/12

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US11521552B2

公开(公告)日：2022-12-06

申请号：US16846195

申请日：2020-04-10

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  So Young Koo ,  Myoung Hwa Kim ,  Eok Su Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L29/78 ,  G09G3/3266 ,  G09G3/3233 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  H01L27/32

Abstract: A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.

公开(公告)号：US11355528B2

公开(公告)日：2022-06-07

申请号：US16890756

申请日：2020-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US11251247B2

公开(公告)日：2022-02-15

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun Kim ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Joon Seok Park ,  Sang Woo Sohn ,  Sang Won Shin ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757 ,  H01L27/12

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).