公开(公告)号：US12289972B2

公开(公告)日：2025-04-29

申请号：US17836386

申请日：2022-06-09

Applicant: Samsung Display Co., Ltd.

Inventor： Myeong Ho Kim ,  Jay Bum Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H10K59/131 ,  G09G3/32 ,  H10K59/121

Abstract: Provided is display device comprising a substrate; a first semiconductor layer disposed on the substrate and having a plurality of transistors; a second semiconductor layer disposed on the first semiconductor layer and having a plurality of transistors; a first data conductive layer disposed on the second semiconductor layer; a first metal layer disposed on the first data conductive layer; and a second metal layer disposed on the first metal layer, wherein the first metal layer includes a first storage electrode and a first input electrode, the second metal layer includes a second storage electrode and a second input electrode, the first storage electrode and the second storage electrode configure a storage capacitor, and the first input electrode and the second input electrode configure an input capacitor.

公开(公告)号：US12218151B2

公开(公告)日：2025-02-04

申请号：US18480494

申请日：2023-10-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： So Young Koo ,  Jay Bum Kim ,  Kyung Jin Jeon ,  Eok Su Kim ,  Jun Hyung Lim

IPC: H01L33/62 ,  H01L27/12

Abstract: A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.

公开(公告)号：US11844238B2

公开(公告)日：2023-12-12

申请号：US17735617

申请日：2022-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L29/66 ,  H10K59/121 ,  H10K59/126 ,  H10K71/00 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/126 ,  H10K59/1216 ,  H10K71/00 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675 ,  H10K59/1201

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

公开(公告)号：US11653541B2

公开(公告)日：2023-05-16

申请号：US17344860

申请日：2021-06-10

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok Son ,  Myoung Hwa Kim ,  Jay Bum Kim ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H01L27/32 ,  G09G3/3258 ,  G09G3/3291 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3279 ,  G09G3/3258 ,  G09G3/3291 ,  H01L27/3258 ,  H01L51/52 ,  H01L51/56 ,  H01L2227/323

Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

公开(公告)号：US11114521B2

公开(公告)日：2021-09-07

申请号：US16562384

申请日：2019-09-05

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok Son ,  Myoung Hwa Kim ,  Jay Bum Kim ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H01L27/32 ,  G09G3/3258 ,  G09G3/3291 ,  H01L51/52 ,  H01L51/56

Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

公开(公告)号：US12062667B2

公开(公告)日：2024-08-13

申请号：US17831285

申请日：2022-06-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H10K59/121 ,  H10K59/124 ,  H10K59/12 ,  H10K102/00

CPC classification number: H01L27/1248 ,  H01L27/1288 ,  H10K59/1213 ,  H10K59/124 ,  H01L27/1225 ,  H10K59/1201 ,  H10K2102/311

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US11594587B2

公开(公告)日：2023-02-28

申请号：US15930650

申请日：2020-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok Son ,  Myeong Ho Kim ,  Jay Bum Kim ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12

Abstract: A display device includes a substrate, a first semiconductor layer on the substrate, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, a second semiconductor layer on the first gate insulating film and at a different layer from the first semiconductor layer, a second gate insulating film on the first conductive layer and the second semiconductor layer, a second conductive layer on the second gate insulating film and including a second gate electrode and a second electrode of the capacitor, a second interlayer insulating film on the second conductive layer, and a third conductive layer on the second interlayer insulating film and including a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode.

公开(公告)号：US11329118B2

公开(公告)日：2022-05-10

申请号：US16915049

申请日：2020-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/56 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

公开(公告)号：US10985281B2

公开(公告)日：2021-04-20

申请号：US16752126

申请日：2020-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun Lim ,  Joon Seok Park ,  Jay Bum Kim ,  Jun Hyung Lim ,  Kyoung Seok Son

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/423

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

公开(公告)号：US11825703B2

公开(公告)日：2023-11-21

申请号：US17242303

申请日：2021-04-28

Applicant: Samsung Display Co., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Yeon Hong Kim ,  Kyoung Seok Son ,  Sun Hee Lee ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/00 ,  H01L29/00 ,  H10K59/124 ,  H10K59/131 ,  H10K59/12 ,  H01L29/786 ,  H01L27/12

CPC classification number: H10K59/124 ,  H10K59/131 ,  H01L27/1222 ,  H01L29/786 ,  H10K59/1201

Abstract: A display device includes a substrate, a first transistor including a channel on the substrate, a first electrode and a second electrode, and a gate electrode overlapping the channel of the first transistor, a first interlayer insulation layer on the first and second electrodes of the first transistor, a second transistor including a channel disposed on the first interlayer insulation layer, a first electrode and a second electrode of the second transistor, and a gate electrode that overlaps the channel of the second transistor, a first connection electrode disposed on the first interlayer insulation layer, and connected with the first electrode of the first transistor, a gate insulation layer disposed between the first interlayer insulation layer and the first connection electrode, and a second connection electrode that connects the first connection electrode and the first electrode of the second transistor.