公开(公告)号：US20190225883A1

公开(公告)日：2019-07-25

申请号：US16254676

申请日：2019-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  The Governing Council of the University of Toronto

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Ankit JAIN ,  Edward SARGENT ,  Oleksandr VOZNYY ,  Larissa LEVINA ,  Sjoerd HOOGLAND ,  Petar Todorovic ,  Makhsud SAIDAMINOV

IPC: C09K11/88 ,  C09K11/67

Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3   Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.

公开(公告)号：US20190211261A1

公开(公告)日：2019-07-11

申请号：US16245728

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Yuho WON ,  Sungwoo HWANG ,  Ji Yeong KIM ,  Eun Joo JANG

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US20190023571A1

公开(公告)日：2019-01-24

申请号：US16117394

申请日：2018-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Shin Ae Jun ,  Eun Joo Jang

IPC: C01B19/00 ,  C09K11/08 ,  C09K11/00 ,  B82Y20/00 ,  B82Y40/00 ,  B82Y30/00

Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy  [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.

公开(公告)号：US20170082879A1

公开(公告)日：2017-03-23

申请号：US15366579

申请日：2016-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho JUNG ,  Hyun A KANG ,  Soo Kyung KWON ,  Won Joo LEE ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Oul CHO ,  In Taek HAN

IPC: G02F1/1335 ,  F21V8/00

CPC classification number: G02F1/1336 ,  G02B6/005 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/32 ,  G02F2202/36 ,  Y10T428/1036 ,  Y10T428/24612 ,  Y10T428/24802 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31565 ,  Y10T428/31587 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31797 ,  Y10T428/31862 ,  Y10T428/31913 ,  Y10T428/31917 ,  Y10T428/31938 ,  Y10T428/31942

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1

公开(公告)号：US20140131740A1

公开(公告)日：2014-05-15

申请号：US14059594

申请日：2013-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun A. KANG ,  Oul CHO ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Soo Kyung KWON ,  Won Joo LEE

IPC: H01L33/26

CPC classification number: C09K11/02 ,  C09K11/883 ,  H01L33/501 ,  H01L33/502 ,  H01L2224/48091 ,  Y02B20/181 ,  H01L2924/00014

Abstract: A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90.

Abstract translation: 一种发光器件，包括：蓝色光源; 磷光体 和半导体纳米晶体，并且发射具有大于或等于约90的R1-R8平均显色指数（“CRI”）的白光和大于或等于约90的R9红色显色指数（R9） 。

公开(公告)号：US20140117286A1

公开(公告)日：2014-05-01

申请号：US14065520

申请日：2013-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae JUN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Seoung-Jae IM

IPC: C09K11/02

CPC classification number: C09K11/025 ,  C09K11/70

Abstract: A composition for preparing a semiconductor nanocrystal, the composition including (i) a Group II and/or Group III precursor, (ii) a Group VI and/or Group V precursor, (iii) an acid anhydride or acyl halide, and (iv) a solvent.

Abstract translation: 一种用于制备半导体纳米晶体的组合物，所述组合物包括（i）II族和/或III族前体，（ii）VI族和/或V族前体，（iii）酸酐或酰基卤，和（iv ）溶剂。

公开(公告)号：US20130169904A1

公开(公告)日：2013-07-04

申请号：US13728977

申请日：2012-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun A. KANG ,  Eun Joo JANG ,  Shin Ae JUN ,  Hyo Sook JANG ,  Chul Ho JUNG

IPC: F21V8/00

CPC classification number: G02B6/005 ,  B82Y20/00 ,  G02B1/045 ,  G02B6/0065 ,  G02F1/1336 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/022 ,  G02F2202/36 ,  Y10S977/778 ,  Y10S977/952

Abstract: A backlight unit for a liquid crystal display device including an light emitting diode light source; a light conversion layer disposed apart from the light emitting diode light source, wherein the light conversion layer is configured to convert light emitted from the light emitting diode light source to white light and provide the white light to a liquid crystal panel; and a light guide panel disposed between the light emitting diode light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, wherein the semiconductor nanocrystal is coated with a first polymer, and wherein the polymer matrix comprises a thermoplastic second polymer.

Abstract translation: 一种用于包括发光二极管光源的液晶显示装置的背光装置; 与所述发光二极管光源隔开的光转换层，其中，所述光转换层被配置为将从所述发光二极管光源发射的光转换为白光，并将白光提供给液晶面板; 以及配置在所述发光二极管光源与所述光转换层之间的导光板，其中所述光转换层包括半导体纳米晶体和聚合物基体，其中所述半导体纳米晶体被第一聚合物涂覆，并且其中所述聚合物基体包含 热塑性第二聚合物。

公开(公告)号：US20230250333A1

公开(公告)日：2023-08-10

申请号：US18130453

申请日：2023-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Seon-Yeong KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Soo Kyung KWON ,  Yong Wook KIM

IPC: C09K11/70 ,  C09K11/62 ,  H01L29/12 ,  C09K11/88

CPC classification number: C09K11/70 ,  C09K11/62 ,  H01L29/122 ,  C09K11/883 ,  H10K59/38

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US20230165027A1

公开(公告)日：2023-05-25

申请号：US17991017

申请日：2022-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soonmin CHA ,  Wonsik YOON ,  Eun Joo JANG ,  Taehyung KIM ,  Hyo Sook JANG

IPC: H01L51/00

CPC classification number: H01L51/502 ,  H01L51/5092 ,  H01L51/5072 ,  H01L51/5056 ,  H01L51/56

Abstract: An electroluminescent device including a first electrode; a second electrode; and a light emitting layer disposed between the first electrode and the second electrode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles and does not include cadmium, wherein the light emitting layer further includes a chemical species including a cyanide group including a cyano group, a cyanide anion, or a combination thereof, and wherein the chemical species includes a bond between a metal and the cyanide group.

公开(公告)号：US20230071604A1

公开(公告)日：2023-03-09

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Heejae CHUNG

IPC: C09K11/88 ,  H01L51/50

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.