公开(公告)号：US20200024512A1

公开(公告)日：2020-01-23

申请号：US16519188

申请日：2019-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Seon-Yeong KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Soo Kyung KWON ,  Yong Wook KIM

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US20190140113A1

公开(公告)日：2019-05-09

申请号：US16234694

申请日：2018-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae JUN ,  Eun Joo JANG ,  Soo Kyung KWON ,  Taek Hoon KIM ,  Won Joo LEE

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/0352

Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

公开(公告)号：US20150286094A1

公开(公告)日：2015-10-08

申请号：US14741918

申请日：2015-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho JUNG ,  Hyun A KANG ,  Soo Kyung KWON ,  Won Joo LEE ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Oul CHO ,  In Taek HAN

IPC: G02F1/1335 ,  F21V8/00

CPC classification number: G02F1/1336 ,  G02B6/005 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/32 ,  G02F2202/36 ,  Y10T428/1036 ,  Y10T428/24612 ,  Y10T428/24802 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31565 ,  Y10T428/31587 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31797 ,  Y10T428/31862 ,  Y10T428/31913 ,  Y10T428/31917 ,  Y10T428/31938 ,  Y10T428/31942

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1

Abstract translation: 一种用于背光单元的膜，其包括半导体纳米晶体的半导体纳米晶体 - 聚合物复合膜和分散有半导体纳米晶体的基质聚合物，其中基质聚合物是通过多官能光固化低聚物的聚合产生的聚合物， 单官能光固化性单体和多功能光固化性交联剂，所述多功能光固化性低聚物的酸值为约0.1mg KOH / g以下，酸值（A1）为 衍生自多功能光固化低聚物的第一结构单元，衍生自单官能光固化性单体的第二结构单元的含量（A2）和衍生自多功能光固化单体的第三结构单元的含量（A3） 可交联剂满足式1：A1 <（A2 + A3）等式1。

公开(公告)号：US20130265522A1

公开(公告)日：2013-10-10

申请号：US13834209

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho JUNG ,  Hyun A. KANG ,  Soo Kyung KWON ,  Won Joo LEE ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Oul CHO ,  In Taek HAN

IPC: G02F1/1335

CPC classification number: G02F1/1336 ,  G02B6/005 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/32 ,  G02F2202/36 ,  Y10T428/1036 ,  Y10T428/24612 ,  Y10T428/24802 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31565 ,  Y10T428/31587 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31797 ,  Y10T428/31862 ,  Y10T428/31913 ,  Y10T428/31917 ,  Y10T428/31938 ,  Y10T428/31942

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1

Abstract translation: 一种用于背光单元的膜，其包括半导体纳米晶体的半导体纳米晶体 - 聚合物复合膜和分散有半导体纳米晶体的基质聚合物，其中基质聚合物是通过多官能光固化低聚物的聚合产生的聚合物， 单官能光固化性单体和多功能光固化性交联剂，所述多功能光固化性低聚物的酸值为约0.1mg KOH / g以下，酸值（A1）为 衍生自多功能光固化低聚物的第一结构单元，衍生自单官能光固化性单体的第二结构单元的含量（A2）和衍生自多功能光固化单体的第三结构单元的含量（A3） 可交联剂满足式1：A1 <（A2 + A3）

公开(公告)号：US20130099213A1

公开(公告)日：2013-04-25

申请号：US13656327

申请日：2012-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae JUN ,  Hyun A KANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Hyo Sook JANG

IPC: H01B1/12 ,  H01L51/54 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01L51/0043 ,  B82Y30/00 ,  C01B17/20 ,  C01B19/007 ,  C01P2002/88 ,  C01P2004/64 ,  C01P2004/84 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/501 ,  H01L33/502 ,  H01L33/507 ,  H01L51/004 ,  H01L51/50 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO−) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.

Abstract translation: 包括半导体纳米晶体的半导体纳米晶体 - 聚合物复合物，包含可与半导体纳米晶体的表面结合的多个羧酸根阴离子基团（-COO-）的聚合物和可结合多个羧酸根阴离子的羧酸根阴离子基团的金属阳离子 团体

公开(公告)号：US20130099212A1

公开(公告)日：2013-04-25

申请号：US13656213

申请日：2012-10-19

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： Eun Joo JANG ,  Shin Ae JUN ,  Hyun A KANG ,  Hyo Sook JANG ,  Soo Kyung KWON

IPC: H01L51/54 ,  H01L51/40

CPC classification number: C09D183/04 ,  C08G77/388 ,  H01L33/507 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H05B33/0803 ,  H01L2924/00014

Abstract: A light emitting diode that includes: a light source; a buffer layer disposed on the light source and including a first matrix polymer; a polymer layer disposed on the buffer layer and including an organic/inorganic hybrid polymer; and an emission layer disposed on the polymer layer and including a light emitting particle dispersed in a second matrix polymer, wherein one selected from the light source, the buffer layer, the emission layer, and a combination thereof includes one selected from sulfurous component, a nitrogenous component, and a combination thereof.

Abstract translation: 一种发光二极管，包括：光源; 缓冲层，其设置在所述光源上并且包括第一基质聚合物; 设置在缓冲层上并包含有机/无机杂化聚合物的聚合物层; 以及设置在所述聚合物层上并包括分散在第二基质聚合物中的发光颗粒的发射层，其中选自光源，缓冲层，发光层及其组合的发光层包括选自亚硫酸成分， 含氮组分及其组合。