摘要:
A semiconductor device includes sectors having memory cells connected to local word lines, decoders selecting the sectors, and a circuit generating, in erasing of a selected sector, a control signal that causes a corresponding one of the decoders associated with the selected sector to be temporarily unselected. Each of the sectors includes a pull-up transistor that is driven by a corresponding one of the decoders via a corresponding one of global word lines connecting the sectors and drives one of the local word lines, and the pull-up transistor is kept OFF by the control signal.
摘要:
A transmission circuit includes a baseband circuit, spreading section, multiplier, digital modulator, quadrature modulator, and antenna. The baseband circuit generates and outputs at least one transmission data constituted by first and second channel data. The spreading section spreads the transmission data with a spreading code that differs for each transmission channel. The multiplier respectively weights the amplitudes of the first and second channel data by using a combination of two gain factors determined by a transmission data rate. The digital modulator digitally modulates the first and second channel data whose amplitudes are weighted by the multiplier. The quadrature modulator quadrature-modulates the digitally modulated first and second channel data and outputs the data as a transmission signal. The antenna emits the transmission signal output from the quadrature modulator as a radio wave. The multiplier weights the amplitudes of the first and second channel data by using gain factors that keep power of the transmission signal output from the quadrature modulator constant regardless of the transmission data rate without changing the ratio of a combination of gain factors determined by the transmission data rate.
摘要:
An exemplary memory sector erase method comprises the steps of pre-programming a first bit and a second bit of a plurality of core memory cells of a plurality of memory blocks of a target memory sector, pre-programming one of a third bit and a fourth bit of a first neighboring memory cell adjacent to the target memory sector, and erasing the first bit and the second bit of the plurality of core memory cells of the plurality of memory blocks. According to another embodiment, the method further comprises programming the one of the third bit and the fourth bit of the first neighboring memory cell after the erasing step.
摘要:
A non-volatile memory read circuit having adjustable current sources to provide end of life simulation. A flash memory device comprising a reference current source used to provide a reference current for comparison to the current of a memory cell being read, includes an adjustable current source in parallel with the memory cell being read, and an adjustable current source in parallel with the reference current source. The current from the memory cell, reference current source, and their parallel adjustable current sources are input to cascode circuits for conversion to voltages that are compared by a sense amplifier. The behavior of the cascode circuits and sense amplifier in response to changes in the memory cell and reference current source may be evaluated by adjusting the adjustable current sources so that the combined current at each input to the sense amplifier simulates the current of the circuit after aging or cycling.
摘要:
A phase correction circuit for a radio communication apparatus includes a variable gain amplifier and phase correction unit. The variable gain amplifier amplifies a transmission/reception signal on the basis of a gain variably set in accordance with a gain signal. The phase correction unit has a phase characteristic opposite to that of the variable gain amplifier, corrects the phase of the transmission/reception signal on the basis of the gain signal supplied to the variable gain amplifier, and cancels a phase change of the signal caused in the variable gain amplifier.
摘要:
The present invention relates generally to semiconductor memory devices and more particularly to multi-bit flash electrically erasable programmable read only memory (EEPROM) devices that employ charge trapping within a floating gate to indicate a 0 or 1 bit state. A memory device is provided, according to an aspect of the invention, comprising a floating gate transistor having dual polysilicon floating gates with an isolation opening between floating gates.
摘要:
A method for reading at least one programmed dual bit memory cell using a plurality of programmed dual bit reference cells. The reference cells are programmed with selected parameters to compensate for changes in the memory cell. The memory cell is read and compared to data in the reference cells to determine the memory cell data. Thus, changes to the memory cell over time are accounted for by programming the reference cells using the selected parameters.
摘要:
System for boosting a signal for use in a memory device. The system includes a circuit for providing a boosted signal used to produce a word line signal in a memory device. The circuit includes a pre-charge stage that has an output terminal and is coupled to receive an address signal and a boost control signal. The pre-charge stage is operable to produce the boosted signal having a pre-charged level at the output terminal. The circuit also includes a boost stage that is coupled to receive the boost control signal and produce a boost activation signal at a boost stage output terminal that is coupled to the output terminal via a capacitive element. When the boost activation signal is active, the boosted signal is set to a selected boost level that is independent of supply voltage.
摘要:
A sense amplifier output equalization circuit for a variable operating voltage high density flash memory device is disclosed. The equalization circuit compensates for the varying sensing speeds due to the varying operating voltages by variably adjusting the duration of an equalization pulse which is used to equalize the output stage of the sense amplifier to the input stage.
摘要:
An equalization circuit for an address transition detector of a high density flash memory device is disclosed. The equalization circuit substantially equalizes the electrical characteristics of a particular signal path to those of another signal path wherein these signal paths transmit trigger signals which further generate other signals. The equalization ensures that resultant signals generated from the trigger signals which traverse these signal paths are generated in the same manner and with the same timing no matter which signal path the trigger signal travels down.