Layered near-field transducer
    42.
    发明授权
    Layered near-field transducer 有权
    分层近场传感器

    公开(公告)号:US08804468B2

    公开(公告)日:2014-08-12

    申请号:US13968021

    申请日:2013-08-15

    Abstract: A near-field transducer includes a substrate that defines a substrate-parallel plane. The near-field transducer also includes a composite layer deposited on the substrate-parallel plane. The composite layer has a first layer of the plasmonic material and a second layer of an insertion material adjacent the substrate. The insertion material reduces plastic deformation of the near-field transducer at elevated temperatures.

    Abstract translation: 近场换能器包括限定基板平行平面的基板。 近场换能器还包括沉积在基板平行平面上的复合层。 复合层具有等离子体激元材料的第一层和邻近衬底的插入材料的第二层。 插入材料降低了近场传感器在高温下的塑性变形。

    Layered Near-field Transducer
    44.
    发明申请
    Layered Near-field Transducer 有权
    分层近场传感器

    公开(公告)号:US20130330573A1

    公开(公告)日:2013-12-12

    申请号:US13968021

    申请日:2013-08-15

    Abstract: A near-field transducer includes a substrate that defines a substrate-parallel plane. The near-field transducer also includes a composite layer deposited on the substrate-parallel plane. The composite layer has a first layer of the plasmonic material and a second layer of an insertion material adjacent the substrate. The insertion material reduces plastic deformation of the near-field transducer at elevated temperatures.

    Abstract translation: 近场换能器包括限定基板平行平面的基板。 近场换能器还包括沉积在基板平行平面上的复合层。 复合层具有等离子体激元材料的第一层和邻近衬底的插入材料的第二层。 插入材料降低了近场传感器在高温下的塑性变形。

    SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME

    公开(公告)号:US20220366934A1

    公开(公告)日:2022-11-17

    申请号:US17877434

    申请日:2022-07-29

    Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

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