Semiconductor Laser with Cathode Metal Layer Disposed in Trench Region
    1.
    发明申请
    Semiconductor Laser with Cathode Metal Layer Disposed in Trench Region 审中-公开
    半导体激光器,阴极金属层设在沟槽区域

    公开(公告)号:US20150110145A1

    公开(公告)日:2015-04-23

    申请号:US14585591

    申请日:2014-12-30

    IPC分类号: H01S5/022 H01S5/34 H01S5/20

    摘要: A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

    摘要翻译: 激光二极管包括衬底和布置在衬底上的接合层。 结层形成激光二极管的量子阱。 激光二极管包括具有至少一个通道的接合面,该通道延伸穿过接合层到基底。 至少一个通道限定阳极区域和阴极区域。 阴极电接点设置在阴极区域的结表面上,并且阳极电连接点设置在接合面上并且在阳极区域处耦合到接合层。 阴极金属层设置在通道的至少沟槽区域中。 阴极金属层将衬底耦合到阴极电连接。

    Semiconductor laser with cathode metal layer disposed in trench region
    7.
    发明授权
    Semiconductor laser with cathode metal layer disposed in trench region 有权
    具有阴极金属层的半导体激光器设置在沟槽区域中

    公开(公告)号:US09088124B2

    公开(公告)日:2015-07-21

    申请号:US14585591

    申请日:2014-12-30

    摘要: A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

    摘要翻译: 激光二极管包括衬底和布置在衬底上的接合层。 结层形成激光二极管的量子阱。 激光二极管包括具有至少一个通道的接合面,该通道延伸穿过接合层到基底。 至少一个通道限定阳极区域和阴极区域。 阴极电接点设置在阴极区域的结表面上,并且阳极电连接点设置在接合面上并且在阳极区域处耦合到接合层。 阴极金属层设置在通道的至少沟槽区域中。 阴极金属层将衬底耦合到阴极电连接。