公开(公告)号：US20110228440A1

公开(公告)日：2011-09-22

申请号：US13047644

申请日：2011-03-14

Applicant: Takahisa Kato ,  Shinichiro Watanabe

Inventor： Takahisa Kato ,  Shinichiro Watanabe

IPC: H01G5/011 ,  B23P11/00

CPC classification number: G02B26/0841 ,  B81B7/0048 ,  B81B2201/042 ,  B81B2201/045 ,  B81C2203/0118 ,  Y10T29/49837

Abstract: A microstructural body includes a substrate such as an electrode substrate, a support portion, one post that fixes the support portion to the substrate, a frame-shaped movable portion provided around outer periphery of the support portion, and an elastic support portion that elastically connects the movable portion and the support portion. The elastic support portion supports the frame-shaped movable portion such that the movable portion is movable relative to the support portion. The elastic support portion includes torsion springs and an elastically deformable connecting portion.

Abstract translation: 微结构体包括诸如电极基板的基板，支撑部分，将支撑部分固定到基板的一个支柱，设置在支撑部分的外周周围的框架形可动部分和弹性连接的弹性支撑部分 可动部和支撑部。 弹性支撑部支撑框状可动部，使得可动部相对于支撑部移动。 弹性支撑部分包括扭转弹簧和可弹性变形的连接部分。

公开(公告)号：US20110168908A1

公开(公告)日：2011-07-14

申请号：US12986015

申请日：2011-01-06

Applicant: Shinan Wang ,  Takashi Nakamura ,  Takayuki Teshima ,  Yutaka Setomoto ,  Shinichiro Watanabe

Inventor： Shinan Wang ,  Takashi Nakamura ,  Takayuki Teshima ,  Yutaka Setomoto ,  Shinichiro Watanabe

IPC: G01T1/24 ,  H01L21/3205 ,  H01L29/06

CPC classification number: G21K1/06 ,  B81C1/00619 ,  G01N23/20075 ,  G01T1/295 ,  H01L21/31111 ,  H01L21/32051

Abstract: A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

Abstract translation: 微结构制造方法包括在Si衬底上形成第一绝缘膜，通过去除第一绝缘膜的一部分暴露出Si表面，通过从暴露的Si表面蚀刻Si衬底形成凹陷部分，形成第二绝缘膜 所述凹部的侧壁和底部通过去除形成在所述凹部的底部上的所述第二绝缘膜的至少一部分而形成Si暴露表面，并且通过电解从所述Si暴露表面向所述凹部填充所述凹部 电镀。

公开(公告)号：US20090004673A1

公开(公告)日：2009-01-01

申请号：US12162879

申请日：2007-01-30

Applicant: Tomoko Ono ,  Shinichiro Watanabe ,  Fumio Furusaki ,  Ko Igami

Inventor： Tomoko Ono ,  Shinichiro Watanabe ,  Fumio Furusaki ,  Ko Igami

IPC: G01N33/53 ,  C12Q1/56

CPC classification number: C12Q1/37 ,  G01N33/573 ,  G01N33/6893 ,  G01N2333/755 ,  G01N2333/96486 ,  G01N2800/32 ,  Y10T436/106664

Abstract: A method for determining a condition of disseminated intravascular coagulation (DIC), by analyzing the amount and/or enzyme activity of a von Willebrand factor (vWF)-cleaving protease (ADAMTS13) (preferably also the amount of vWF) in a patient suffering from DIC, and a kit for determining a condition of DIC, comprising an antibody or a fragment thereof which specifically binds to ADAMTS13, are disclosed. According to the present invention, a differential diagnosis of patients with thrombotic thrombocytopenic purpura (TTP) can be carried out from among patients with DIC, which could not be distinguished on the basis of only clinical findings or known markers.

Abstract translation: 通过分析患有血管内血栓凝固（vICF）的von Willebrand因子（vWF） - 切割蛋白酶（ADAMTS13）（优选vWF的量）的量和/或酶活性来确定弥漫性血管内凝血（DIC）的状况的方法 DIC和用于确定DIC的条件的试剂盒，其包含特异性结合ADAMTS13的抗体或其片段。 根据本发明，可以从具有DIC的患者中进行血栓性血小板减少性紫癜（TTP）患者的鉴别诊断，其不能仅基于临床发现或已知标记来区分。

公开(公告)号：US20080231930A1

公开(公告)日：2008-09-25

申请号：US12032246

申请日：2008-02-15

Applicant: Yasushi Mizoguchi ,  Yasuhiro Soeda ,  Shinichiro Watanabe ,  Yasuhiro Shimada

Inventor： Yasushi Mizoguchi ,  Yasuhiro Soeda ,  Shinichiro Watanabe ,  Yasuhiro Shimada

IPC: G02B26/10

CPC classification number: G02B26/085 ,  G02B26/101 ,  H04N5/7458

Abstract: An oscillator device includes a first oscillator, a second oscillator configured to support the first oscillator for torsional rotation about a first rotational axis, through a first torsion spring, a supporting member configured to support the second oscillator for torsional rotation about a second rotational axis, through a second torsion spring, the second rotational axis having a predetermined angle with respect to the first rotational axis of the first oscillator, a coil disposed in relation to the second oscillator, an electric current applying member configured to apply an electric current to the coil, and a magnetic field generating member configured to apply a magnetic field to the coil, wherein the coil is localized in at least one of zones of the second oscillator being quartered by extension lines of the first and second rotational axes.

Abstract translation: 振荡器装置包括第一振荡器，第二振荡器，其被配置为通过第一扭转弹簧支撑第一振荡器绕第一旋转轴线进行扭转旋转;支撑构件，构造成支撑第二振荡器以围绕第二旋转轴线扭转; 通过第二扭转弹簧，第二旋转轴线相对于第一振荡器的第一旋转轴线具有预定角度，相对于第二振荡器设置的线圈，构造成向线圈施加电流的电流施加部件 以及被配置为向所述线圈施加磁场的磁场产生部件，其中，所述线圈位于所述第二振荡器的至少一个区域中，所述区域由所述第一和第二旋转轴线的延伸线分隔开。

公开(公告)号：US07158009B2

公开(公告)日：2007-01-02

申请号：US10811780

申请日：2004-03-29

Applicant: Shinichiro Watanabe

Inventor： Shinichiro Watanabe

IPC: H04Q5/22

CPC classification number: G06K19/0701 ,  G06K19/0723

Abstract: An electronic circuit for a contactless tag includes a transceiving device having an antenna coil and a circuit changeover switch that switching between a state where the antenna coil forms a resonance circuit of the transceiving device and a state where the antenna coil forms a booster circuit.

Abstract translation: 一种用于非接触式标签的电子电路包括具有天线线圈和电路转换开关的收发装置，其中天线线圈形成收发装置的谐振电路的状态和天线线圈形成升压电路的状态。

公开(公告)号：US07066855B2

公开(公告)日：2006-06-27

申请号：US10647906

申请日：2003-08-25

Applicant: Shinichiro Watanabe ,  Makoto Sawada ,  Takanori Aoki ,  Ryousuke Nonomura

Inventor： Shinichiro Watanabe ,  Makoto Sawada ,  Takanori Aoki ,  Ryousuke Nonomura

IPC: F16H61/06

CPC classification number: F16H61/0021 ,  F16H59/36 ,  F16H61/66272 ,  F16H2059/366

Abstract: There is provided a line pressure control apparatus that is comprised of a line pressure control section that controls line pressure according to its target value calculated based on input torque information, target gear ratio, and so forth; and a line pressure setting section that sets the upper limit of the line pressure according to an inputted range signal when the engine speed is equal to or higher than a predetermined speed. The line pressure control section suppresses an increase in line pressure by controlling the line pressure such that it does not exceed the set upper limit in the case where the upper limit of the line pressure has been set. Therefore, it is possible to prevent the occurrence of cavitation noise in an oil pump, which generates basic pressure for line pressure, during high-speed engine revolution.

Abstract translation: 提供了一种线路压力控制装置，其包括：线路压力控制部，其根据其基于输入转矩信息，目标齿轮比等计算出的目标值来控制线路压力; 线路压力设定部，其在发动机转速等于或高于预定速度时根据输入的范围信号设定线路压力的上限。 线路压力控制部通过在线路压力的上限被设定的情况下控制线路压力使其不超过设定的上限来抑制线路压力的增加。 因此，可以防止在高速发动机转速期间产生线路压力的基本压力的油泵中产生气蚀噪声。

公开(公告)号：US4545681A

公开(公告)日：1985-10-08

申请号：US465337

申请日：1983-02-09

Applicant: Shinichiro Watanabe

Inventor： Shinichiro Watanabe

IPC: G01J3/08 ,  G01J3/42

CPC classification number: G01J3/42 ,  G01J3/08 ,  G01N2201/127

Abstract: In a spectrophotometer of double beam type using automatic gain control, preparatory scanning is first carried out by scanning reference and sample cells with radiation of varying wavelengths both in an empty state, and controlling the gain of a photo detector at each wavelength such that a detector output responding to a sample cell transmitted beam may become constant while storing a detector output responding to a reference cell transmitted beam. Measurement of a sample material is then carried out at each wavelength by scanning the reference cell and the sample material-charged sample cell, reading out the reference output stored in the preparatory scanning stage as a reference voltage, and controlling the gain of the detector such that a detector output responding to a reference cell transmitted beam may be equal to the reference voltage.

Abstract translation: 在使用自动增益控制的双光束类型的分光光度计中，首先通过以空白状态扫描具有变化波长的辐射的参考和采样单元并且在每个波长处控制光电检测器的增益来执行预扫描，使得检测器 响应于采样小区发射波束的输出可以变得恒定，同时存储响应于参考小区发射波束的检测器输出。 然后通过扫描参考电池和样品充电样品池，读取存储在预备扫描阶段中的参考输出作为参考电压，并且将检测器的增益控制在每个波长上，从而测量样品材料 响应于参考小区发射波束的检测器输出可以等于参考电压。

公开(公告)号：US09546413B2

公开(公告)日：2017-01-17

申请号：US14007583

申请日：2012-03-28

Applicant: Takayuki Nozaki ,  Manabu Takahashi ,  Nobuhiro Fujita ,  Hiroshi Yoshida ,  Shinichiro Watanabe ,  Takeshi Yamamoto ,  Chisato Wakabayashi ,  Riki Okamoto ,  Kohichi Sano

Inventor： Takayuki Nozaki ,  Manabu Takahashi ,  Nobuhiro Fujita ,  Hiroshi Yoshida ,  Shinichiro Watanabe ,  Takeshi Yamamoto ,  Chisato Wakabayashi ,  Riki Okamoto ,  Kohichi Sano

IPC: C22C38/26 ,  C21D8/02 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/12 ,  C22C38/14 ,  C22C38/08 ,  C22C38/10 ,  C22C38/16 ,  C22C38/28 ,  C22C38/34 ,  C22C38/38 ,  C21D9/46 ,  B32B15/01 ,  C22C38/60 ,  C23C2/02 ,  C23C2/06 ,  C23C2/28 ,  C23C2/40 ,  C21D8/04

CPC classification number: C22C38/26 ,  B32B15/013 ,  C21D8/0226 ,  C21D8/0263 ,  C21D8/0463 ,  C21D9/46 ,  C21D2201/05 ,  C21D2211/002 ,  C21D2211/005 ,  C21D2211/009 ,  C22C38/001 ,  C22C38/002 ,  C22C38/005 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/08 ,  C22C38/10 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  C22C38/28 ,  C22C38/34 ,  C22C38/38 ,  C22C38/60 ,  C23C2/02 ,  C23C2/06 ,  C23C2/28 ,  C23C2/40

Abstract: Disclosed is a hot-rolled steel sheet including, by mass %, C:0.02% to 0.5% of C, and the sum of the content of Si and the content of Al is 1.0% to 4.0%. An average pole density of an orientation group from {100} to {223} is 1.0 to 6.5, and a pole density of a crystal orientation {332} is 1.0 to 5.0. A microstructure includes, by of an area ratio, 2% to 30% of retained austenite, 20% to 50% of ferrite, and 10% to 60% of bainite. rC that is a Lankford value in a direction orthogonal to a rolling direction is 0.70 to 1.10, and r30 that is a Lankford value in a direction forming an angle of 30° with the rolling direction is 0.70 to 1.10.

Abstract translation: 公开了以质量％计，C：0.02〜0.5％的C，Si的含量和Al的含量之和为1.0〜4.0％的热轧钢板。 {100} <011>至{223} <110>的取向基团的平均极密度为1.0〜6.5，晶体取向{332} <113>的极点密度为1.0〜5.0。 微观结构包括通过面积比为2％至30％的残余奥氏体，20％至50％的铁素体和10％至60％的贝氏体。 在与轧制方向正交的方向上的兰克福德值的rC为0.70〜1.10，在与轧制方向成30°角的方向上的兰克福德值为r = 0.70〜1.10。

公开(公告)号：US08911567B2

公开(公告)日：2014-12-16

申请号：US13508407

申请日：2010-11-09

Applicant: Toshio Ogawa ,  Naoki Matsutani ,  Koichi Goto ,  Shinichiro Watanabe ,  Nobuhiro Fujita ,  Toshiki Nonaka

Inventor： Toshio Ogawa ,  Naoki Matsutani ,  Koichi Goto ,  Shinichiro Watanabe ,  Nobuhiro Fujita ,  Toshiki Nonaka

IPC: C22C38/06 ,  C22C38/18 ,  C21D8/02 ,  C23C2/02 ,  C21D8/04 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C23C2/26 ,  C23C2/28

CPC classification number: C23C2/02 ,  B32B15/012 ,  B32B15/013 ,  C21D8/0426 ,  C21D8/0431 ,  C21D8/0436 ,  C21D8/0463 ,  C21D2211/005 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/18 ,  C22C38/20 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/28 ,  C22C38/32 ,  C22C38/38 ,  C22C38/40 ,  C23C2/26 ,  C23C2/28 ,  Y10T428/12799

Abstract: The high-strength steel sheet includes, by mass %: C: 0.01% to 0.10%; Si: 0.15% or less; Mn: 0.80% to 1.80%; P: 0.10% or less; S: 0.015% or less; Al: 0.10% to 0.80%; Cr: 0.01% to 1.50%; N: 0.0100% or less; and a balance consisting of iron and inevitable impurities, in which a metallic structure is composed of ferrite and a hard second phase, the area fraction of the ferrite is 80% or more, the area fraction of the hard second phase is 1% to 20%, the fraction of unrecrystallized ferrite in the ferrite is less than 10%, the ferrite grain sizes are 5 μm to 20 μm, and the fraction of the ferrite crystal grains having an aspect ratio of 1.2 or less in the entire ferrite crystal grains is 60% or more.

Abstract translation: 高强度钢板以质量％计含有：C：0.01〜0.10％ Si：0.15％以下; Mn：0.80〜1.80％ P：0.10％以下; S：0.015％以下; Al：0.10〜0.80％ Cr：0.01〜1.50％ N：0.0100％以下; 余量由铁和不可避免的杂质组成，金属结构由铁素体和硬质二相组成，铁素体的面积率为80％以上，硬质相的面积分数为1〜20 ％，铁素体中未再结晶铁素体的分数小于10％，铁素体晶粒尺寸为5μm〜20μm，铁素体晶粒整体的纵横比为1.2以下的铁素体晶粒的比例为 60％以上。

公开(公告)号：US08895934B2

公开(公告)日：2014-11-25

申请号：US12986015

申请日：2011-01-06

Applicant: Shinan Wang ,  Takashi Nakamura ,  Takayuki Teshima ,  Yutaka Setomoto ,  Shinichiro Watanabe

Inventor： Shinan Wang ,  Takashi Nakamura ,  Takayuki Teshima ,  Yutaka Setomoto ,  Shinichiro Watanabe

IPC: B81C1/00 ,  G01T1/29

CPC classification number: G21K1/06 ,  B81C1/00619 ,  G01N23/20075 ,  G01T1/295 ,  H01L21/31111 ,  H01L21/32051

Abstract: A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

Abstract translation: 微结构制造方法包括在Si衬底上形成第一绝缘膜，通过去除第一绝缘膜的一部分暴露出Si表面，通过从暴露的Si表面蚀刻Si衬底形成凹陷部分，形成第二绝缘膜 所述凹部的侧壁和底部通过去除形成在所述凹部的底部上的所述第二绝缘膜的至少一部分而形成Si暴露表面，并且通过电解从所述Si暴露表面向所述凹部填充所述凹部 电镀。